Infineon Technologies IRF7902TRPBF

Overview

IRF7902TRPBF from Infineon (formerly International Rectifier) is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, configured as a matched control/synchronous FET pair for DC-DC buck converters. It delivers R_DS(on) of 22.6 mΩ (Q1) and 14.4 mΩ (Q2) at V_GS = 10 V, supports 6.4 A and 9.7 A continuous drain current respectively, and features fully characterized avalanche capability (3.4 mJ / 7.3 mJ) - used in notebook POL converters where low conduction loss and fast switching are critical.

For engineers reviewing the IRF7902TRPBF datasheet, IRF7902TRPBF pinout, IRF7902TRPBF application, or IRF7902TRPBF equivalent, key selection criteria include gate charge asymmetry (Q_g = 4.6 nC / 6.5 nC), body diode reverse recovery time (t_rr = 7.8–12 ns / 12–18 ns), thermal resistance (R_θJA = 90 °C/W / 62.5 °C/W), and SO-8 lead-free compliance per JEDEC J-STD-020.

Technical Context

This dual MOSFET integrates two discrete N-channel silicon power transistors on a single SO-8 die: Q1 serves as the high-side control switch with higher R_DS(on) and lower gate charge; Q2 acts as the low-side synchronous rectifier with lower R_DS(on) and higher current rating. Both share common source terminals internally tied to the exposed drain pad.

The device operates under standard logic-level gate drive (V_GS(th) = 1.35–2.25 V), exhibits negative temperature coefficient for threshold voltage (−4.7 mV/°C / −5.9 mV/°C), and maintains stable R_DS(on) up to 150 °C junction temperature - enabling robust operation in thermally constrained POL modules.

Key Specifications

Pinout & Package

IRF7902TRPBF uses an SO-8 surface-mount package with exposed drain pad (pin 8) for enhanced thermal dissipation. The dual FET shares source connections internally: Q1 source is pins 1,2,3; Q2 source is pins 5,6,7. Gate and drain terminals are isolated per channel.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7902TRPBF offers superior avalanche energy rating and tighter thermal resistance matching - critical for unregulated or high-dV/dt environments like notebook adapters and server VRMs.

Availability

IRF7902TRPBF is available at Aetrix Electronics and suitable for notebook computer POL converters, server VRM modules, and graphics card DC-DC stages requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRF7902TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7902TRPBF belongs to the HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-density DC-DC conversion in computing and consumer electronics.

FAQ

Is IRF7902TRPBF pin-compatible with IRF7902PbF?

Yes. IRF7902TRPBF is the tape-and-reel packaging variant of IRF7902PbF, sharing identical SO-8 pinout, electrical specifications, and thermal characteristics. The "TR" suffix denotes tape-and-reel delivery; "PbF" confirms lead-free compliance. Both use the same die and assembly process.

Can IRF7902TRPBF be used in 3.3 V gate drive applications?

No. While V_GS(th) starts at 1.35 V, R_DS(on) rises sharply below 4.5 V: Q1 reaches 45 mΩ and Q2 reaches 28 mΩ at V_GS = 3.3 V. Reliable operation requires ≥4.5 V gate drive to maintain specified conduction loss and thermal margin.

What is the maximum recommended PCB copper area for the exposed drain pad?

Infineon recommends ≥100 mm² of 2-oz copper connected to the exposed drain pad (pin 8) via ≥4 thermal vias (0.3 mm diameter, filled or plated) to achieve the rated R_θJA of 90 °C/W (Q1) and 62.5 °C/W (Q2). Smaller areas increase junction temperature disproportionately.

Does IRF7902TRPBF support paralleling multiple units for higher current?

No. The device is not characterized for paralleling. Its matched dual-die structure lacks independent gate terminals, and thermal coupling between Q1 and Q2 prevents balanced current sharing across multiple packages. Use higher-current single-channel MOSFETs or dedicated multi-phase controllers instead.