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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF7904PBF

Name: IRF7904PBF
Brand: Infineon Technologies
SKU: IRF7904PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7904PBF

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7904PBF.pdf

Description:: MOSFET 2N-CH 30V 7.6A/11A 8SO

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Product details

Overview

IRF7904PBF from Infineon Technologies is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, configured as a control FET (Q1) and synchronous FET (Q2) pair for DC-DC buck converters. It delivers R_DS(on) of 16.2 mΩ (Q1) and 10.8 mΩ (Q2) at V_GS = 10 V, supports 7.6 A and 11 A continuous drain current respectively, and features fully characterized avalanche capability (140 mJ / 250 mJ) - used in notebook CPU voltage regulation modules.

For engineers reviewing the IRF7904PBF datasheet, IRF7904PBF pinout, IRF7904PBF application, or IRF7904PBF equivalent, key selection criteria include dual-channel R_DS(on) mismatch tolerance, gate charge asymmetry (Q_g = 7.5 nC / 14 nC), body diode reverse recovery time (11–24 ns), thermal resistance (R_θJA = 90 / 62.5 °C/W), and SO-8 lead-free compliance.

Technical Context

This dual MOSFET integrates two discrete N-channel devices on one die with independent terminals: Q1 optimized for high-side switching (lower gate charge, higher R_DS(on)), Q2 for low-side synchronous rectification (lower R_DS(on), higher current rating). Both share identical 30 V V_DSS, 1.35–2.25 V V_GS(th), and ±20 V V_GS rating.

Its design enables precise timing control in synchronous buck topologies: Q1's lower Q_gd (2.5 nC) reduces Miller-induced shoot-through risk, while Q2's improved body diode (t_rr = 16–24 ns, Q_rr = 6.9–10 nC) minimizes dead-time losses and EMI during freewheeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - maximum blocking voltage for both channels; sets upper limit for input rail in 12 V/19 V POL applications
R_DS(on) Q1 / Q2	16.2 mΩ / 10.8 mΩ @ V_GS = 10 V - defines conduction loss asymmetry; Q2 contributes ~33% less I²R loss than Q1 at equal current
I_D Continuous	7.6 A (Q1) / 11 A (Q2) @ T_A = 25°C - thermal derating differs (0.011 / 0.016 W/°C), requiring separate layout copper for each channel
Q_g Total	7.5 nC (Q1) / 14 nC (Q2) - dictates gate driver strength requirement; Q2 needs >85% more drive current for same slew rate
t_rr Body Diode	11–17 ns (Q1) / 16–24 ns (Q2) - measured at I_S = 6.1 A / 8.8 A, di/dt = 100 A/µs; critical for minimizing cross-conduction in 300–600 kHz VRMs
E_AS	140 mJ (Q1) / 250 mJ (Q2) - single-pulse avalanche energy at T_J = 125°C; validates robustness against inductive switching transients
R_θJA	90 °C/W (Q1) / 62.5 °C/W (Q2) - reflects different thermal coupling to PCB; Q2's lower value enables higher power density in shared heatsink layouts

Pinout & Package

IRF7904PBF uses a standard SO-8 surface-mount package with exposed drain pads for enhanced thermal performance. Pin assignments are symmetric per channel: pins 1–4 serve Q1 (G1, D1, S1, S1), pins 5–8 serve Q2 (G2, D2, S2, S2), with internal isolation between channels.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	Gate of Q1	High-impedance control input; requires <2.25 V threshold to turn on; sensitive to ESD and ringing
2 (D1)	Drain of Q1	Connected to input rail; carries full load current during on-state; tied to Q1 source via internal parasitic diode
3 (S1)	Source of Q1	Reference node for Q1 gate drive; common with pin 4; forms return path for high-side switch current
4 (S1)	Source of Q1 (redundant)	Dual-source connection improves current sharing and reduces bond wire inductance in high-frequency switching
5 (G2)	Gate of Q2	Control input for low-side FET; driven referenced to Q2 source (pin 6); lower V_GS(th) tolerance eases gate driver design
6 (D2)	Drain of Q2	Connected to output inductor node; handles synchronous rectification current; shares thermal pad with pin 7/8
7 (S2)	Source of Q2	Power ground reference for Q2; tied to system GND; carries full load current during freewheeling phase
8 (S2)	Source of Q2 (redundant)	Dual-source configuration lowers effective source inductance, improving di/dt immunity and reducing V_DS overshoot

Key Features

Feature	Design Value
Asymmetric dual-channel optimization	Q1 (control FET) prioritizes fast switching (low Q_gd, 2.5 nC); Q2 (sync FET) prioritizes conduction efficiency (low R_DS(on), 10.8 mΩ)
Fully characterized avalanche rating	Specified E_AS (140/250 mJ) and I_AR (6.1/8.8 A) enable reliable operation under unclamped inductive load conditions without external snubbers
Improved body diode reverse recovery	t_rr = 11–24 ns and Q_rr = 2.6–10 nC reduce switching loss and EMI during dead-time, critical for >300 kHz VRMs
Lead-free SO-8 package	RoHS-compliant, halogen-free construction with exposed drain thermal pads; supports reflow profiles up to 260°C peak
Low gate charge asymmetry ratio	Q_g(Q2)/Q_g(Q1) = 1.87× matches typical gate driver current capability; avoids overdesign of high-side driver stage

Applications

Notebook CPU Voltage Regulator Modules

Server Point-of-Load Converters

Use Scenario: Regulating core voltage (0.7–1.5 V) for Intel Core i-series or AMD Ryzen CPUs under dynamic load steps up to 100 A/µs.

IC Role / Device Role / Timing Role: Q1 acts as high-side PWM switch; Q2 serves as synchronous rectifier; coordinated gate timing eliminates body diode conduction loss.

Use Value: Dual-channel integration reduces PCB area by ~35% vs. discrete MOSFET pairs while maintaining <1.2% voltage regulation accuracy across 10–95% load range.

Use Scenario: Providing stable 1.8 V or 3.3 V rails to FPGA I/O banks and memory interfaces in 1U rack servers.

IC Role / Device Role / Timing Role: Q1 controls duty cycle in constant-on-time (COT) control loop; Q2 replaces Schottky diode to achieve >92% efficiency at 40 A output.

Use Value: Low R_DS(on) mismatch (Q2/Q1 = 0.67×) ensures balanced thermal distribution across dual-phase interleaved designs, extending MTBF by 22%.

Graphics Card GPU Power Delivery

Gaming Console SoC Power Management

Use Scenario: Delivering transient-heavy 0.8–1.2 V power to NVIDIA RTX or AMD Radeon GPUs during real-time ray tracing workloads.

IC Role / Device Role / Timing Role: Q1 handles high dv/dt switching; Q2 conducts high-current freewheeling with minimal reverse recovery loss.

Use Value: Verified t_rr ≤ 24 ns enables 500 kHz switching without excessive gate drive loss, reducing output capacitor count by 40%.

Use Scenario: Supplying multi-rail power (1.1 V core, 1.8 V I/O, 3.3 V peripherals) to custom SoCs in PlayStation/Xbox platforms.

IC Role / Device Role / Timing Role: Dual FETs operate in parallel per rail using multiphase topology; Q1/Q2 pairing simplifies phase interleaving timing.

Use Value: Matched thermal resistance profiles (R_θJA ratio = 1.44×) allow uniform thermal pad layout, eliminating hot-spot formation under sustained 30 W GPU loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 12.5 mΩ / 8.5 mΩ @ 10 V; higher Q_g (10.5 / 18.5 nC); 40 V V_DSS	Better conduction loss but higher gate drive demand; wider V_DSS margin suits 24 V input systems	Select when input voltage exceeds 19 V or when lower R_DS(on) outweighs gate driver complexity
DMN601DWK-7	Single-channel dual SO-8; matched R_DS(on) (11.5 mΩ / 11.5 mΩ); lower E_AS (90 mJ / 90 mJ)	Symmetric performance simplifies control loop tuning but lacks avalanche robustness for high-di/dt loads	Prefer for cost-sensitive consumer electronics where transient stress is limited and layout space allows discrete placement

Compared with Si7852DP-T1-GE3 and DMN601DWK-7, IRF7904PBF offers superior avalanche ruggedness and asymmetric optimization for high-efficiency VRM designs - making it preferred for computing applications demanding reliability under dynamic load transients.

Availability

IRF7904PBF is available at Aetrix Electronics and suitable for notebook CPU voltage regulator modules, server point-of-load converters, and graphics card GPU power delivery requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF7904PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line targets high-efficiency DC-DC conversion in computing and communications infrastructure, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum recommended gate drive voltage for IRF7904PBF?

The absolute maximum V_GS rating is ±20 V, but the device is characterized and optimized for operation at 10 V. Driving above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and risk of overvoltage failure during transients. For 4.5 V logic-level drive, R_DS(on) rises to 20.5 mΩ (Q1) and 14.5 mΩ (Q2), requiring careful thermal validation.

Can IRF7904PBF be used in a bootstrap high-side configuration?

No - IRF7904PBF is not designed for bootstrap operation because its Q1 and Q2 sources are isolated and not internally tied. The SO-8 pinout provides separate source terminals (pins 3/4 for Q1, 6/7/8 for Q2), preventing direct bootstrap capacitor connection to a floating source. It must be used in low-side synchronous or dual low-side configurations with independent gate drivers.

How does the body diode performance compare between Q1 and Q2?

Q2 exhibits superior body diode characteristics: V_SD = 1.0 V (vs. Q1's 1.0 V), but t_rr = 16–24 ns and Q_rr = 6.9–10 nC versus Q1's 11–17 ns and 2.6–3.9 nC. This reflects Q2's larger die area and optimized doping profile for freewheeling, making it better suited for low-loss synchronous rectification despite slightly longer recovery.

Is IRF7904PBF suitable for automotive applications?

No - IRF7904PBF is not AEC-Q101 qualified and lacks automotive-grade screening (e.g., HTOL, temperature cycling, ESD HBM ≥ 2 kV). Its specified operating junction temperature range is –55°C to +150°C, but qualification data for automotive ambient conditions (–40°C to +125°C case) and lifetime reliability under vibration/humidity stress is not published. Use only in commercial/industrial computing applications.

IRF7904PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 7.6A, 11A

Rds On (Max) @ Id, Vgs:: 16.2mOhm @ 7.6A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 11nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 910pF @ 15V

Power - Max:: 1.4W, 2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7904PBF FAQ

1.How can I place an order for IRF7904PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7904PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7904PBF reliable?

The price and inventory of IRF7904PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7904PBF is usually 5 days.

3.What payment methods are accepted for IRF7904PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7904PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7904PBF?

IRF7904PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7904PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7904PBF?

For technical support, including IRF7904PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7904PBF requirements.

6.How does Aetrix verify that IRF7904PBF is sourced from the original manufacturer or authorized distributors?

All IRF7904PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7904PBF meets industry standards.

7.What is the process for return or replacement of IRF7904PBF?

All IRF7904PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7904PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7904PBF part is unused and in its original packaging.

Return procedure for IRF7904PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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