My Inquiry
My Account
Infineon Technologies IRF7904TRPBF
- Part No.:
- IRF7904TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7904TRPBF.pdf
- Description:
- MOSFET 2N-CH 30V 7.6A/11A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,987
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF7904TRPBF from Infineon Technologies is a dual N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, configured as a control FET (Q1) and synchronous rectifier FET (Q2) pair for DC-DC buck converters. It delivers RDS(on) of 16.2 mΩ (Q1) and 10.8 mΩ (Q2) at VGS = 10 V, supports 7.6 A and 11 A continuous drain current respectively, and features fully characterized avalanche capability (140 mJ / 250 mJ) - optimized for point-of-load regulation in notebook computers and graphics cards.
For engineers reviewing the IRF7904TRPBF datasheet, IRF7904TRPBF pinout, IRF7904TRPBF application, or IRF7904TRPBF equivalent, key selection criteria include dual-channel RDS(on) asymmetry, gate charge partitioning (Qg = 7.5 nC / 14 nC), body diode reverse recovery time (trr = 11–24 ns), thermal resistance (RθJA = 90 / 62.5 °C/W), and SO-8 lead-free compliance per JEDEC J-STD-020.
Technical Context
This dual MOSFET integrates two independently rated N-channel silicon power transistors on a single die with shared source terminals - Q1 (control FET) optimized for higher threshold voltage (VGS(th) = 1.35–2.25 V) and lower gate charge, while Q2 (synchronous FET) prioritizes ultra-low RDS(on) and faster diode recovery. Both channels are specified for 30 V VDSS, ±20 V VGS, and operate up to TJ = 150 °C.
The device employs trench-gate HEXFET technology enabling low gate charge (Qgd = 2.5 / 4.8 nC) and high transconductance (gfs = 17 / 23 S), supporting high-frequency switching (>1 MHz) in synchronous buck topologies. Its clamped inductive avalanche rating (IAR = 6.1 / 8.8 A) and improved body diode softness (Qrr = 2.6–10 nC) reduce EMI and voltage overshoot during hard commutation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - maximum blocking voltage for both FETs; sets upper limit for input rail in 12 V/19 V POL converters |
| RDS(on) Q1 / Q2 | 16.2 / 10.8 mΩ @ VGS = 10 V - defines conduction loss asymmetry critical for optimizing high-side vs. low-side efficiency |
| ID (TA = 25°C) | 7.6 A / 11 A - continuous current capability at room ambient; determines minimum trace width and heatsinking in compact layouts |
| Qg Q1 / Q2 | 7.5 / 14 nC - total gate charge directly impacts driver power loss and required gate drive strength |
| trr Q1 / Q2 | 11–17 / 16–24 ns - reverse recovery time of integrated body diode; governs shoot-through risk and snubber design |
| EAS | 140 / 250 mJ - single-pulse avalanche energy rating; enables robustness against inductive switching transients without external protection |
| RθJA | 90 / 62.5 °C/W - junction-to-ambient thermal resistance; dictates maximum power dissipation under natural convection cooling |
Pinout & Package
IRF7904TRPBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AC) with exposed drain paddle for enhanced thermal performance. Pin numbering follows standard SO-8 convention (pin 1 = G1, pin 2 = S1, pin 3 = D1, pin 4 = G2, pin 5 = S2, pin 6 = D2, pin 7 = D2, pin 8 = D1), with internal parallel connection of all drain terminals (pins 3, 6, 7, 8) and source terminals (pins 2, 5).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G1) | Gate of Control FET (Q1) | Drives high-side switch; requires precise timing control to avoid shoot-through with Q2 |
| Pin 2 (S1) | Source of Control FET (Q1) | Common source node for Q1; tied to switch node in buck topology; referenced to output in synchronous rectification |
| Pin 3 (D1) | Drain of Control FET (Q1) | Connected to input rail; shares drain pad with Q2 for low-inductance power routing |
| Pin 4 (G2) | Gate of Synchronous FET (Q2) | Driven 180° out-of-phase with G1; timing margin critical due to Q2's lower VGS(th) |
| Pin 5 (S2) | Source of Synchronous FET (Q2) | Output node (ground-referenced); carries full load current; low RDS(on) minimizes conduction loss |
| Pins 6–8 (D2/D1) | Drain of Q2 + Drain of Q1 | Internally paralleled drain terminals forming common high-side power node; maximizes current handling and thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetric dual-FET integration | Optimized RDS(on)/Qg ratio between Q1 (control) and Q2 (synchronous) enables >92% efficiency at 12 V → 1.2 V/10 A |
| Fully characterized avalanche | Specified EAS (140/250 mJ) and IAR (6.1/8.8 A) allow reliable operation under unclamped inductive switching without derating |
| Improved body diode recovery | trr = 11–24 ns and Qrr = 2.6–10 nC reduce voltage spikes and EMI during freewheeling phase |
| Low 4.5 V RDS(on) | Q1: 20.5 mΩ, Q2: 14.5 mΩ - enables direct drive from 5 V controllers without level-shifting |
| Lead-free and RoHS-compliant | Meets JEDEC J-STD-020 reflow profile; qualified for Pb-free assembly in high-volume consumer electronics |
Applications
| Notebook Computer CPU VRM | Server DDR Memory Regulator |
|---|---|
Use Scenario: Dual-phase 1.2 V/30 A CPU core supply using interleaved synchronous buck stages. IC Role / Device Role / Timing Role: Q1 acts as high-side switch; Q2 serves as low-side synchronous rectifier; precise dead-time control prevents cross-conduction. Use Value: Asymmetric RDS(on) reduces total conduction loss by 18% vs. matched duals; SO-8 footprint saves PCB area over discrete solutions. | Use Scenario: Single-phase 1.35 V/25 A DDR4 memory rail with tight transient response requirements. IC Role / Device Role / Timing Role: Integrated Q1/Q2 pair replaces two discrete MOSFETs; shared drain pad lowers loop inductance for <500 ns load-step response. Use Value: Low Qgd/Qsw enables stable 1 MHz operation; trr < 24 ns ensures clean zero-voltage switching during light-load discontinuous mode. |
| Graphics Card GPU Power Stage | Gaming Console SoC Core Supply |
Use Scenario: High-current 0.9 V/60 A GPU core rail with multi-phase layout and thermal constraints. IC Role / Device Role / Timing Role: Q1 handles high-VGS switching logic; Q2 conducts bulk current during freewheeling; body diode softness suppresses ringing. Use Value: RθJA = 62.5 °C/W (Q2) allows 1.3 W dissipation at 60 °C ambient; EAS = 250 mJ withstands GPU load transients without failure. | Use Scenario: Compact 1.05 V/15 A SoC core supply in thermally constrained game console motherboard. IC Role / Device Role / Timing Role: Dual FET operates in synchronous buck configuration; Q2's low RDS(on) dominates efficiency at light-to-moderate loads. Use Value: 10.8 mΩ Q2 RDS(on) cuts conduction loss by 35% vs. legacy 16 mΩ parts; SO-8 package fits 8 mm × 6 mm layout envelope. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 12.5 / 8.5 mΩ @ 10 V; Qg = 10.5 / 17.5 nC; VDSS = 30 V; SO-8 | Lower RDS(on) but higher Qg; slightly slower trr (15–28 ns) | Preferred for ultra-high-efficiency designs where gate drive loss is secondary to conduction loss |
| DMN6016LFG-7 | RDS(on) = 16 / 10 mΩ @ 10 V; Qg = 7.2 / 13.5 nC; VDSS = 30 V; SOT-26 | Same RDS(on) profile but smaller SOT-26 package; lower power dissipation limit (0.5 W / 0.7 W) | Suitable only for sub-5 A applications; not recommended for notebook/server POL due to thermal limits |
Compared with Si7852DP-T1-GE3 and DMN6016LFG-7, IRF7904TRPBF offers superior avalanche ruggedness (250 mJ vs. 180 mJ / not rated) and tighter trr control - making it preferred for high-reliability, high-transient industrial and computing POL systems where robustness outweighs marginal RDS(on) gains.
Availability
IRF7904TRPBF is available at Aetrix Electronics and suitable for notebook computers, server VRMs, and graphics card power delivery requiring stable component supply across extended production lifecycles.
Supply support for IRF7904TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.
The IRF7904TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in portable and enterprise computing platforms.
FAQ
What is the maximum allowable gate drive voltage for IRF7904TRPBF?
The absolute maximum gate-to-source voltage (VGS) is ±20 V per channel. Operation above 12 V provides minimal RDS(on) improvement beyond 10 V, while exceeding 15 V increases gate oxide stress without functional benefit. Recommended drive is 10 V for optimal balance of conduction loss, switching speed, and reliability.
Can IRF7904TRPBF be used in a non-synchronous buck converter?
Yes - Q1 can operate as the sole active switch with an external Schottky diode replacing Q2's body diode. However, this forfeits the efficiency gain from synchronous rectification (typically 3–5% at >5 A), and Q2's low RDS(on) remains unused. The device's asymmetric design makes it less optimal than single-channel MOSFETs for non-synchronous use.
How is thermal performance affected by PCB layout for IRF7904TRPBF?
Thermal resistance drops significantly with copper area: RθJA improves from 90 °C/W (Q1) to ~50 °C/W with 1-in² 2-oz copper pad and 4 thermal vias. The exposed drain paddle must be soldered to a solid ground plane; insufficient thermal relief causes localized junction temperatures to exceed 150 °C at <1 W dissipation.
Does IRF7904TRPBF require gate resistors for stability in high-frequency operation?
Yes - a 5–10 Ω series gate resistor per channel is recommended to dampen ringing caused by gate-drain capacitance (Crss = 94 / 180 pF) and PCB trace inductance. Without damping, VGS oscillation can cause partial turn-on, increasing switching losses and risking thermal runaway at >500 kHz.
IRF7904TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 7.6A, 11A
- Rds On (Max) @ Id, Vgs:
- 16.2mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id:
- 2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 910pF @ 15V
- Power - Max:
- 1.4W, 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7904TRPBF FAQ
1.How can I place an order for IRF7904TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7904TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7904TRPBF reliable?
The price and inventory of IRF7904TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7904TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7904TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7904TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7904TRPBF?
IRF7904TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7904TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7904TRPBF?
For technical support, including IRF7904TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7904TRPBF requirements.
6.How does Aetrix verify that IRF7904TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7904TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7904TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7904TRPBF?
All IRF7904TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7904TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7904TRPBF part is unused and in its original packaging.
Return procedure for IRF7904TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7904TRPBF Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
