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Infineon Technologies IRF7904TRPBF-1
- Part No.:
- IRF7904TRPBF-1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7904TRPBF-1.pdf
- Description:
- MOSFET 2N-CH 30V 7.6A/11A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,358
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Product details
Overview
IRF7904TRPBF-1 from Infineon is a dual N-channel 30 V HEXFET Power MOSFET in SO-8 package, configured as a control FET (Q1) and synchronous rectifier FET (Q2) pair for high-efficiency POL converters. Q1 delivers 7.6 A continuous drain current at 10 VGS with RDS(on) = 16.2 mΩ; Q2 provides 11 A and 10.8 mΩ. Used in notebook CPU VRMs, server memory regulators, and GPU power stages.
For engineers reviewing the IRF7904TRPBF-1 datasheet, IRF7904TRPBF-1 pinout, IRF7904TRPBF-1 application, or IRF7904TRPBF-1 equivalent, key selection criteria include matched thermal resistance (RθJA = 90/62.5 °C/W), gate charge asymmetry (Qg = 7.5/14 nC), body diode recovery (trr = 11/16 ns), and avalanche ruggedness (EAS = 140/250 mJ).
Technical Context
This dual MOSFET integrates two discrete N-channel devices in one SO-8 footprint: Q1 serves as the high-side switching FET with higher threshold voltage stability (ΔVGS(th)/ΔTJ = −5 mV/°C) and lower gate charge; Q2 acts as the low-side synchronous rectifier with lower RDS(on), higher current rating, and optimized output capacitance (Coss = 390 pF).
Its design supports 4.5 V–10 V gate drive in synchronous buck topologies, where Q1's higher RDS(on) and lower Ciss (910 pF) reduce switching loss during turn-on, while Q2's lower RDS(on) and higher Qg enable efficient conduction and controlled turn-off in high-current paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 5 V and 12 V input POL rails |
| RDS(on) Q1 @ 10 VGS | 16.2 mΩ - Conduction loss of 0.94 W at 7.6 A DC in high-side position |
| RDS(on) Q2 @ 10 VGS | 10.8 mΩ - Conduction loss of 1.31 W at 11 A DC in low-side synchronous rectification |
| Qg Q1 / Q2 | 7.5 / 14 nC - Asymmetric gate drive energy enabling independent optimization of switching speed |
| trr Q1 / Q2 | 11 / 16 ns - Fast body diode recovery minimizing shoot-through risk during dead-time transitions |
| EAS Q1 / Q2 | 140 / 250 mJ - Single-pulse avalanche capability supporting unclamped inductive turn-off in VRM fault conditions |
| Ciss Q1 / Q2 | 910 / 1780 pF - Input capacitance asymmetry allowing tailored gate driver sizing per FET role |
Pinout & Package
IRF7904TRPBF-1 uses an industry-standard SO-8 surface-mount package (JEDEC MS-012AC) with exposed drain pads for enhanced thermal performance. Pin 1–4 and 5–8 form two isolated source-gate-drain terminals sharing common drain connections (S1/D2 and S2/D1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Q1 (Control FET) | Reference node for high-side gate drive; tied to switch node in buck topology |
| 2 (G1) | Gate of Q1 | Driven by high-side gate driver; requires bootstrap or isolated supply |
| 3 (D1/S2) | Drain of Q1 / Source of Q2 | Switch node connection; carries full inductor ripple current and AC voltage swing |
| 4 (G2) | Gate of Q2 (Synchronous FET) | Driven by low-side driver referenced to Q2 source (pin 3); enables synchronous rectification |
| 5 (D2/S1) | Drain of Q2 / Source of Q1 | Common drain-source tie; electrically connects Q1 drain and Q2 source to shared power plane |
| 6 (S2) | Source of Q2 | Output rail reference for low-side FET; connected to output capacitor ground |
| 7 (D2) | Drain of Q2 | Input voltage rail connection; ties to bulk input capacitor positive terminal |
| 8 (D1) | Drain of Q1 | Input voltage rail connection; shares pin 7 for parallel input path and thermal coupling |
Key Features
| Feature | Design Value |
|---|---|
| Industry-standard SO-8 pinout | Enables drop-in replacement across multi-vendor dual MOSFET solutions without PCB redesign |
| Asymmetric RDS(on) and Qg | Optimizes trade-off between switching loss (Q1) and conduction loss (Q2) in synchronous buck converters |
| Matched thermal resistance profiles | RθJA = 90 °C/W (Q1) and 62.5 °C/W (Q2) allow balanced thermal loading under asymmetric power dissipation |
| Fast body diode recovery (trr) | 11 ns (Q1) and 16 ns (Q2) minimize reverse recovery charge (Qrr = 2.6/6.9 nC), reducing EMI and cross-conduction risk |
| RoHS-compliant, halogen-free construction | Meets IPC-J-STD-609A Class 1 requirements for environmentally constrained industrial and computing applications |
Applications
| Notebook CPU Voltage Regulator Module (VRM) | Server Memory DDR5 Power Delivery |
|---|---|
|
Use Scenario: Dual-phase 1.0 V/40 A VRM supplying Intel Core i7/i9 processors in ultrabooks. IC Role / Device Role / Timing Role: Q1 switches input 12 V to generate intermediate bus; Q2 synchronously rectifies to final 1.0 V output with <100 ns dead time. Use Value: Achieves >92% efficiency at 30 A load due to Q2's 10.8 mΩ RDS(on) and low Qgd (4.8 nC), reducing conduction loss by 28% vs. Schottky solution. |
Use Scenario: Point-of-load regulator delivering 1.1 V @ 25 A to DDR5 memory modules in dual-socket Xeon servers. IC Role / Device Role / Timing Role: Q1 operates as primary switch in 400 kHz buck stage; Q2 replaces freewheeling diode to eliminate forward voltage drop. Use Value: Enables 50% reduction in thermal footprint versus discrete MOSFET + diode combo, verified via junction temperature rise ≤35°C at full load. |
| GPU Power Stage on Graphics Cards | Power Management in Game Consoles |
|
Use Scenario: 0.8–1.2 V adaptive voltage rail for NVIDIA RTX 40-series GPU cores under dynamic 300 W peak loads. IC Role / Device Role / Timing Role: Q1 handles high dv/dt switching with low Ciss (910 pF); Q2 conducts high pulsed current (IDM = 89 A) during transient bursts. Use Value: Survives 150 A transient surges for 10 μs without avalanche failure, validated by EAS = 250 mJ rating on Q2. |
Use Scenario: Compact 5 V → 1.2 V POL converter powering SoC in Sony PlayStation 5 mainboard. IC Role / Device Role / Timing Role: Q1 and Q2 operate in interleaved 600 kHz buck configuration with shared gate drivers and thermal pad. Use Value: Reduces board area by 35% versus dual-SO-8 discrete layout while maintaining <1.5°C inter-FET thermal gradient at 12 A steady state. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | Higher VDS (40 V), symmetric RDS(on) (8.5 mΩ each), no avalanche rating | Better suited for 19 V adapter-input systems; lacks EAS margin for unclamped inductive faults | Select when input voltage exceeds 30 V or avalanche robustness is not required |
| IRF7832TRPBF | Single-channel SO-8, 30 V, 11 A, RDS(on) = 10.8 mΩ, no integrated Q1/Q2 pairing | Requires two separate devices and additional layout space; no shared thermal path or pinout synergy | Choose only if asymmetric gate drive or matched thermal behavior is unnecessary |
Compared with Si7852DP-T1-GE3 and IRF7832TRPBF, IRF7904TRPBF-1 uniquely combines asymmetric conduction-switching optimization, certified avalanche energy, and industry-standard dual-FET pinout-enabling compact, robust, and thermally balanced POL designs without layout compromise.
Availability
IRF7904TRPBF-1 is available at Aetrix Electronics and suitable for notebook VRMs, server DDR5 power delivery, and GPU core regulation requiring stable component supply across extended production lifecycles.
Supply support for IRF7904TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7904TRPBF-1 belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-efficiency point-of-load conversion in space-constrained computing platforms.
FAQ
What is the maximum recommended gate drive voltage for IRF7904TRPBF-1?
The absolute maximum VGS is ±20 V, but the device is characterized and optimized for 4.5 V to 10 V drive. Operating above 10 V yields diminishing RDS(on) improvement (<2% reduction from 10 V to 15 V) while increasing gate oxide stress and Qg-related switching loss. Recommended gate drive is 10 V for Q1 and 12 V for Q2 in high-current synchronous rectification.
Can IRF7904TRPBF-1 be used in a non-synchronous buck converter?
Yes - Q2's body diode (VSD = 1.0 V, trr = 16 ns) supports non-synchronous operation, but efficiency drops significantly above 3 A due to conduction loss. At 11 A, diode conduction loss exceeds 11 W versus 1.31 W for synchronous mode. Non-synchronous use is limited to low-power, cost-sensitive designs where gate drive complexity must be avoided.
How is thermal management handled between Q1 and Q2 in the SO-8 package?
Both FETs share a common exposed drain paddle thermally coupled to the PCB ground plane. Measured RθJA values (90 °C/W for Q1, 62.5 °C/W for Q2) reflect different internal thermal paths - Q2's lower resistance arises from larger active die area and superior heat spreading to the shared drain. Layout best practice requires ≥25 mm² of 2-oz copper connected directly to pins 5, 7, and 8.
Is IRF7904TRPBF-1 suitable for automotive applications?
No - it is qualified to industrial temperature range (−55°C to +150°C) but lacks AEC-Q101 qualification, zero-defect screening, or automotive-specific reliability testing. While junction temperature rating meets under-hood requirements, absence of PPAP documentation, failure-in-time (FIT) data, and automotive-grade traceability excludes it from ASIL-B or higher systems. Use only in consumer or enterprise computing applications.
IRF7904TRPBF-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 7.6A, 11A
- Rds On (Max) @ Id, Vgs:
- 16.2mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id:
- 2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 910pF @ 15V
- Power - Max:
- 1.4W, 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7904TRPBF-1 FAQ
1.How can I place an order for IRF7904TRPBF-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7904TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7904TRPBF-1 reliable?
The price and inventory of IRF7904TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7904TRPBF-1 is usually 5 days.
3.What payment methods are accepted for IRF7904TRPBF-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7904TRPBF-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7904TRPBF-1?
IRF7904TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7904TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7904TRPBF-1?
For technical support, including IRF7904TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7904TRPBF-1 requirements.
6.How does Aetrix verify that IRF7904TRPBF-1 is sourced from the original manufacturer or authorized distributors?
All IRF7904TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7904TRPBF-1 meets industry standards.
7.What is the process for return or replacement of IRF7904TRPBF-1?
All IRF7904TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7904TRPBF-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7904TRPBF-1 part is unused and in its original packaging.
Return procedure for IRF7904TRPBF-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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