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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF7905PBF

Name: IRF7905PBF
Brand: Infineon Technologies
SKU: IRF7905PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7905PBF

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7905PBF.pdf

Description:: MOSFET 2N-CH 30V 7.8A/8.9A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7905PBF from Infineon Technologies is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, configured as control FET (Q1) and synchronous rectifier FET (Q2) for DC-DC POL converters. It delivers R_DS(on) of 21.8 mΩ (Q1) and 17.1 mΩ (Q2) at V_GS = 10 V, supports 7.8 A/8.9 A continuous drain current, and features fully characterized avalanche capability (12 mJ / 18 mJ) for robust transient handling in high-frequency notebook and server VRMs.

For engineers reviewing the IRF7905PBF datasheet, IRF7905PBF pinout, IRF7905PBF application, or IRF7905PBF equivalent, key selection criteria include dual-channel R_DS(on) matching at 4.5 V gate drive, body diode reverse recovery time (10–20 ns), gate charge asymmetry (Q_g = 4.6–10 nC), and SO-8 thermal resistance (R_θJA = 62.5 °C/W).

Technical Context

This dual MOSFET integrates two independently optimized N-channel devices in one SO-8 footprint: Q1 serves as the high-side control switch with higher threshold voltage stability (ΔV_GS(th)/ΔT_J = −5 mV/°C) and lower transconductance (g_fs = 15 S), while Q2 acts as the low-side synchronous rectifier with lower R_DS(on), higher g_fs (18 S), and enhanced body diode recovery (Q_rr = 4.0–6.0 nC).

Its gate charge profile shows distinct Qgs1/Qgs2 partitioning (e.g., Q1: 0.9 nC pre-V_th, 0.6 nC post-V_th), enabling precise timing control in synchronous buck topologies. The device operates across −55°C to +150°C junction range and is rated for 30 V V_DSS, ±20 V V_GS, with linear derating (0.016 W/°C) above 70°C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 12 V input POL stages with margin against overshoot
R_DS(on) Q1 / Q2	21.8 mΩ / 17.1 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss per FET at 7 A load
I_D Continuous	7.8 A (Q1) / 8.9 A (Q2) @ T_A = 25°C - Supports >15 A total output current in dual-phase layouts
Q_g Total	4.6–6.9 nC (Q1) / 6.9–10 nC (Q2) - Determines gate driver power requirement and switching speed trade-off
t_rr Body Diode	10–15 ns (Q1) / 13–20 ns (Q2) - Minimizes shoot-through risk and EMI during hard commutation
E_AS	12 mJ (Q1) / 18 mJ (Q2) - Withstands unclamped inductive energy in VRM fault conditions
R_θJA	62.5 °C/W - Requires ≤1.3 W dissipation for safe operation at 70°C ambient without heatsink

Pinout & Package

IRF7905PBF uses a standard SO-8 surface-mount package with exposed drain pad for thermal enhancement. Pin numbering follows JEDEC MS-012AC, with pins 1–4 assigned to Q1 and pins 5–8 to Q2 in a symmetrical dual-die layout.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Q1)	Drain (D1), Source (S1), Gate (G1), Source (S1)	Pins 1 & 4 are parallel S1 terminals; pin 2 is D1; pin 3 is G1 - enables low-inductance source return path
5, 6, 7, 8 (Q2)	Drain (D2), Source (S2), Gate (G2), Source (S2)	Pins 5 & 8 are parallel S2 terminals; pin 6 is D2; pin 7 is G2 - identical layout symmetry improves layout repeatability

Key Features

Feature	Design Value
Very Low R_DS(on) at 4.5 V V_GS	Enables direct drive from 5 V PWM controllers without level-shifting, reducing BOM count
Fully Characterized Avalanche Voltage/Current	Guarantees 6.2 A/7.1 A avalanche current and 12/18 mJ energy rating - eliminates need for external snubbers
Improved Body Diode Reverse Recovery	Q_rr = 2.5–3.8 nC (Q1) / 4.0–6.0 nC (Q2) - cuts diode conduction loss by >30% vs. legacy HEXFETs
100% Tested for R_G	Gate resistance 3.1–4.9 Ω ensures consistent turn-on/turn-off timing across production lots
Dual SO-8 Configuration	Reduces PCB area by 40% vs. discrete dual-FET solutions while maintaining thermal isolation between channels

Applications

Notebook CPU VRM

Server Memory Regulator

Use Scenario: Dual-phase 1.0–1.3 V, 20–30 A CPU core supply in ultrabook platforms.

IC Role / Device Role / Timing Role: Q1 functions as high-side control FET; Q2 serves as low-side synchronous rectifier with interleaved gate drive.

Use Value: 17.1 mΩ R_DS(on) on Q2 reduces conduction loss by 0.35 W at 15 A, extending battery runtime by 4.2%.

Use Scenario: Single-phase 1.2 V DDR4 memory regulator delivering up to 25 A in 1U rack servers.

IC Role / Device Role / Timing Role: Q1 handles PWM switching; Q2 replaces Schottky diode to eliminate forward drop and reverse recovery losses.

Use Value: 10–20 ns t_rr minimizes dead-time penalty, enabling >92% efficiency at 500 kHz switching frequency.

Graphics Card GPU Core Supply

Game Console SoC Power Rail

Use Scenario: Triple-phase 0.8–1.1 V GPU core supply with peak current >50 A in discrete GPUs.

IC Role / Device Role / Timing Role: Two IRF7905PBFs provide six FETs (three high-side, three low-side) in compact layout.

Use Value: Matched R_DS(on) tolerance (<15%) ensures balanced current sharing across phases, limiting thermal imbalance to <3°C.

Use Scenario: Dual-rail 1.05 V / 1.8 V SoC supply in handheld game consoles with strict thermal envelope.

IC Role / Device Role / Timing Role: Q1 supplies main SoC core; Q2 powers I/O domain, both driven by integrated PMIC PWM outputs.

Use Value: 62.5 °C/W R_θJA allows full-load operation at 65°C ambient without forced airflow, meeting handheld thermal specs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel POL MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 18.5 mΩ / 15.0 mΩ @ 10 V; Q_g = 7.5 / 9.2 nC; SO-8 with thermal pad	Lower R_DS(on) but higher C_iss (1050 pF vs. 910 pF) increases gate drive loss at >1 MHz	Preferred for 1 MHz+ VRMs where conduction loss dominates; requires stronger gate driver
DMN3026LSD-13	R_DS(on) = 22.0 mΩ / 17.5 mΩ @ 10 V; E_AS = 8.5 / 13 mJ; no avalanche characterization data published	Reduced avalanche margin limits use in high-reliability server applications with frequent load transients	Suitable for cost-sensitive consumer notebooks where fault energy is limited by system-level fusing

Compared with Si7852DP and DMN3026LSD, IRF7905PBF offers superior avalanche ruggedness (18 mJ Q2) and tighter R_DS(on) matching (±2.5 mΩ), making it optimal for thermally constrained, high-transient industrial-grade POL designs requiring long-term reliability without derating.

Availability

IRF7905PBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, server memory regulators, and graphics card GPU power delivery systems requiring stable component supply and full traceability through extended product lifecycle.

Supply support for IRF7905PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation.

The IRF7905PBF belongs to the HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-density point-of-load DC-DC conversion in computing and consumer electronics where thermal performance and avalanche robustness are critical.

FAQ

What is the maximum gate-source voltage rating for IRF7905PBF?

The absolute maximum V_GS rating is ±20 V, with recommended operating range of −10 V to +20 V. Exceeding ±20 V risks permanent gate oxide damage. The device is characterized for stable operation at 4.5 V and 10 V gate drive, supporting direct interface with standard PWM controllers and level-shifted drivers.

How does the body diode performance compare between Q1 and Q2?

Q2 exhibits superior body diode characteristics: V_SD = 1.0 V (vs. Q1's 1.0 V), but lower Q_rr (4.0–6.0 nC vs. 2.5–3.8 nC) and longer t_rr (13–20 ns vs. 10–15 ns), reflecting its optimization for synchronous rectification duty with higher reverse recovery charge tolerance.

Can IRF7905PBF be used in single-FET configurations?

Yes - each channel (Q1 and Q2) operates independently with isolated terminals. Engineers may use only one channel (e.g., Q2 for low-side switching) while leaving the other unconnected, provided unused gate pins are tied to source and thermal design accounts for partial power dissipation in the SO-8 footprint.

What is the thermal resistance from junction to board (R_θJB) for IRF7905PBF?

R_θJB is not specified in the datasheet; only R_θJA = 62.5 °C/W and R_θJL = 42 °C/W (junction-to-drain lead) are provided. For board-level thermal modeling, use R_θJL with copper pour under the exposed drain pad, or measure empirically using JEDEC JESD51-7 test conditions.

IRF7905PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 7.8A, 8.9A

Rds On (Max) @ Id, Vgs:: 21.8mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 6.9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 600pF @ 15V

Power - Max:: 2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7905PBF FAQ

1.How can I place an order for IRF7905PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7905PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7905PBF reliable?

The price and inventory of IRF7905PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7905PBF is usually 5 days.

3.What payment methods are accepted for IRF7905PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7905PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7905PBF?

IRF7905PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7905PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7905PBF?

For technical support, including IRF7905PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7905PBF requirements.

6.How does Aetrix verify that IRF7905PBF is sourced from the original manufacturer or authorized distributors?

All IRF7905PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7905PBF meets industry standards.

7.What is the process for return or replacement of IRF7905PBF?

All IRF7905PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7905PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7905PBF part is unused and in its original packaging.

Return procedure for IRF7905PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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