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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF7907PBF

Name: IRF7907PBF
Brand: Infineon Technologies
SKU: IRF7907PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7907PBF

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7907PBF.pdf

Description:: MOSFET 2N-CH 30V 9.1A/11A 8SO

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Product details

Overview

IRF7907PBF from Infineon Technologies is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, configured as control FET (Q1) and synchronous rectifier FET (Q2) for DC-DC buck converters. It delivers R_DS(on) of 16.4 mΩ (Q1) and 11.8 mΩ (Q2) at V_GS = 10 V, supports 9.1 A and 11 A continuous drain current respectively, and features fully characterized avalanche capability (10–15 mJ) for robust POL operation in notebook computers.

For engineers reviewing the IRF7907PBF datasheet, IRF7907PBF pinout, IRF7907PBF application, or IRF7907PBF equivalent, this dual MOSFET is selected for high-efficiency point-of-load regulation where low gate charge (6.7–21 nC), fast switching (t_r/t_f = 9.3/3.4 ns Q1), and improved body diode recovery (t_rr = 12–24 ns) directly impact converter efficiency and thermal management.

Technical Context

This dual MOSFET integrates two independently rated N-channel devices in a single SO-8 footprint: Q1 serves as the high-side control switch with higher threshold voltage stability (ΔV_GS(th)/ΔT_J = −4.6 mV/°C) and lower transconductance (g_fs = 19 S), while Q2 operates as the low-side synchronous rectifier with lower R_DS(on) (11.8 mΩ), higher g_fs (24 S), and optimized gate charge partitioning (Q_gd/Q_gs2 ratio).

Its clamped inductive avalanche rating (I_AR = 7.0/8.8 A), linear derating factor (0.016 W/°C), and matched thermal resistance (R_θJA = 62.5 °C/W per channel) enable reliable operation under transient overloads and ambient temperature variations up to +150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient overshoot margins in POL converters.
R_DS(on) Q1 / Q2	16.4 / 11.8 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss per FET at 8 A, critical for thermally constrained notebook PCBs.
Q_g Q1 / Q2	6.7 / 14 nC - Low total gate charge reduces driver power and enables efficient 500 kHz–1 MHz switching without excessive gate drive losses.
t_r/t_f Q1	9.3 / 3.4 ns - Fast edge rates minimize switching transition time, reducing overlap losses in synchronous buck topologies.
E_AS Q1 / Q2	10 / 15 mJ - Single-pulse avalanche energy rating ensures survivability during output short-circuit or startup faults without external snubbers.
t_rr Q1 / Q2	12 / 16 ns - Reduced reverse recovery time lowers body diode conduction loss and EMI generation during dead-time intervals.
V_GS(th)	1.35–2.35 V - Tight threshold range ensures predictable turn-on behavior across temperature and process variation in feedback-controlled gates.

Pinout & Package

IRF7907PBF uses an industry-standard SO-8 surface-mount package with exposed drain pad for thermal enhancement. Pin numbering follows JEDEC MS-012AC standard (pin 1 = G1, pin 2 = S1, pin 3 = D1, pin 4 = D1, pin 5 = D2, pin 6 = S2, pin 7 = G2, pin 8 = D2), supporting dual-channel layout in compact DC-DC modules.

Pin/Terminal	Circuit Role	Design Meaning
G1	Gate of Control FET (Q1)	High-side gate input requiring level-shifted or bootstrap drive; isolated from G2 to prevent cross-conduction.
S1	Source of Control FET (Q1)	Switch node connection between Q1 drain and Q2 source; forms buck converter switching node.
D1	Drain of Control FET (Q1)	Connected to input rail (VIN); carries full input current and must be routed with low-inductance path.
D2	Drain of Synchronous FET (Q2)	Shared with D1 pins 3/4 and pins 5/8 - common drain connection to VIN; enables dual-FET integration in SO-8.
S2	Source of Synchronous FET (Q2)	Output node (VOUT) connection; low-impedance return path for load current and inductor ripple current.
G2	Gate of Synchronous FET (Q2)	Low-side gate driven directly from controller; timing must avoid shoot-through with G1 via precise dead-time control.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V V_GS	Q1: 20.5 mΩ, Q2: 13.7 mΩ - Enables efficient 5 V gate drive from integrated controllers, eliminating need for dedicated gate drivers.
Fully characterized avalanche voltage/current	Rated I_AR = 7.0/8.8 A and E_AS = 10/15 mJ - Allows safe operation during unclamped inductive switching events without derating or external protection.
Improved body diode reverse recovery	t_rr = 12–24 ns, Q_rr = 4.1–8.9 nC - Reduces diode conduction loss and associated EMI in non-synchronous or light-load discontinuous conduction mode.
100% RG tested	Gate resistance 2.6–4.7 Ω (Q1), 3.0–5.0 Ω (Q2) - Ensures consistent gate drive impedance for predictable rise/fall times and reduced ringing.
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - Supports standard reflow profiles without preconditioning for high-volume SMT assembly.

Applications

Notebook Computer POL Converters

Server VRM Modules

Use Scenario: Regulating core voltage (e.g., CPU/GPU VDD) from 12 V or 5 V input in space-constrained laptop motherboards.

IC Role / Device Role / Timing Role: Dual-channel synchronous buck switch pair - Q1 controls high-side switching, Q2 replaces Schottky diode for low-loss synchronous rectification.

Use Value: Achieves >92% efficiency at 8 A load with <15 °C junction rise, enabling fanless thermal design and extended battery runtime.

Use Scenario: Providing tightly regulated 1.8 V or 1.2 V supply to server processors with dynamic load steps up to 100 A/µs.

IC Role / Device Role / Timing Role: High-current POL stage in multi-phase VRM - Q1/Q2 operate in parallel per phase to share current and reduce per-FET thermal stress.

Use Value: Matched R_DS(on) tracking and low Q_g allow stable phase current balancing and <500 ns dead-time control without shoot-through risk.

Graphics Card VRMs

Game Console Power Stages

Use Scenario: Delivering transient-heavy GPU core voltage (e.g., 0.8–1.3 V) with rapid load changes during rendering or ray tracing workloads.

IC Role / Device Role / Timing Role: Primary switching pair in 3–6 phase VRM - Q2's low R_DS(on) minimizes conduction loss during high-duty-cycle operation.

Use Value: 11.8 mΩ R_DS(on) at 10 V gate drive reduces average conduction loss by 28% vs. legacy 15 mΩ parts, lowering VRM temperature by ~8 °C at 50 A.

Use Scenario: Powering SoC subsystems (CPU, GPU, memory) in compact game console mainboards with strict EMI limits.

IC Role / Device Role / Timing Role: Dual-FET buck stage operating at 1 MHz - Q1/Q2 jointly manage high-frequency switching with minimized C_oss (190/390 pF) and Crss (88/190 pF).

Use Value: Low Crss suppresses Miller-induced turn-on, enabling clean 1 MHz operation without external gate resistors or active Miller clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) Q1/Q2 = 15.5/10.5 mΩ @ 10 V; higher C_iss (1050/2100 pF); no avalanche rating specified.	Lacks documented E_AS rating - unsuitable for unclamped inductive fault conditions without additional protection.	Select when avalanche robustness is not required and higher input capacitance is acceptable for slower switching.
DMN601DWK-7	Single-channel dual SO-8; R_DS(on) = 12.5 mΩ @ 10 V (both FETs); Q_g = 12.5 nC; no separate Q1/Q2 characterization.	Not optimized for asymmetric control/synchronous roles - identical specs limit flexibility in adaptive dead-time tuning.	Prefer for cost-sensitive designs where matched dual FETs simplify layout but require external gate drive optimization.

Compared with Si7852DP-T1-GE3 and DMN601DWK-7, IRF7907PBF provides asymmetric, application-tuned parameters (Q1/Q2 R_DS(on), Q_g, t_rr) and guaranteed avalanche performance - making it uniquely suited for high-reliability, high-frequency POL converters where control/synchronous FET roles demand differentiated electrical behavior.

Availability

IRF7907PBF is available at Aetrix Electronics and suitable for notebook computers, server VRMs, and graphics card power delivery systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for IRF7907PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001 standards.

The IRF7907PBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in portable and computing applications where thermal performance and switching reliability are critical.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

At T_A = 70°C, the continuous drain current is 7.3 A for Q1 and 8.8 A for Q2, based on SO-8 package thermal limitations and derated power dissipation (1.3 W per channel). This reflects real-world board-level thermal performance with standard 2 oz copper and minimal copper pour.

Does IRF7907PBF support 4.5 V gate drive for both channels?

Yes - Q1 achieves R_DS(on) ≤ 20.5 mΩ and Q2 ≤ 13.7 mΩ at V_GS = 4.5 V, enabling direct drive from 5 V logic or integrated PWM controllers without level-shifting. Gate threshold remains functional down to 1.35 V, ensuring robust turn-on margin.

How is avalanche energy rated for simultaneous dual-channel operation?

Avalanche ratings (E_AS = 10 mJ Q1, 15 mJ Q2) apply per channel under unclamped inductive switching conditions. Simultaneous avalanche is not rated; design practice requires limiting fault energy to the lower-rated channel (Q1) or using external clamping if both channels may experience concurrent stress.

Can IRF7907PBF replace discrete single-channel MOSFETs in existing layouts?

Yes - its SO-8 footprint matches standard dual-gate layouts, and pinout (G1/S1/D1-D1/D2/S2/G2/D2) aligns with common buck converter reference designs. However, gate drive sequencing must respect independent G1/G2 inputs and avoid shoot-through via controller-configured dead time.

IRF7907PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 9.1A, 11A

Rds On (Max) @ Id, Vgs:: 16.4mOhm @ 9.1A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 10nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 850pF @ 15V

Power - Max:: 2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7907PBF FAQ

1.How can I place an order for IRF7907PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7907PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7907PBF reliable?

The price and inventory of IRF7907PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7907PBF is usually 5 days.

3.What payment methods are accepted for IRF7907PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7907PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7907PBF?

IRF7907PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7907PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7907PBF?

For technical support, including IRF7907PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7907PBF requirements.

6.How does Aetrix verify that IRF7907PBF is sourced from the original manufacturer or authorized distributors?

All IRF7907PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7907PBF meets industry standards.

7.What is the process for return or replacement of IRF7907PBF?

All IRF7907PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7907PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7907PBF part is unused and in its original packaging.

Return procedure for IRF7907PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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