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Infineon Technologies IRF7907TRPBF
- Part No.:
- IRF7907TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7907TRPBF.pdf
- Description:
- MOSFET 2N-CH 30V 9.1A/11A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,911
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Product details
Overview
IRF7907TRPBF from Infineon Technologies is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, configured as a control FET (Q1) and synchronous rectifier FET (Q2) pair for DC-DC POL converters. It delivers RDS(on) of 16.4 mΩ (Q1) and 11.8 mΩ (Q2) at VGS = 10 V, supports 9.1 A and 11 A continuous drain current respectively, and features fully characterized avalanche capability (10–15 mJ) for robustness in notebook CPU VRMs.
For engineers reviewing the IRF7907TRPBF datasheet, IRF7907TRPBF pinout, IRF7907TRPBF application, or IRF7907TRPBF equivalent, key selection criteria include gate charge asymmetry (Qg = 6.7 nC / 14 nC), differential RDS(on) optimization for high-side/low-side roles, body diode reverse recovery time (12–24 ns), and SO-8 thermal resistance (RθJA = 62.5 °C/W).
Technical Context
This dual MOSFET integrates two functionally distinct channels on one die: Q1 operates as the high-side switching FET with higher threshold voltage (1.8 V typ.) and lower transconductance (19 S), while Q2 serves as the low-side synchronous rectifier with lower RDS(on), higher gfs (24 S), and faster reverse recovery (trr = 16 ns). Both share common source connection in internal layout but are electrically isolated per channel.
The device uses trench-gate silicon process to achieve low gate charge asymmetry (Qgs2/Qgd ratio optimized for ZVS/ZCS operation), temperature-stable VGS(th) drift (−4.6 to −4.9 mV/°C), and clamped inductive avalanche rating validated up to IAR = 8.8 A. Thermal design relies on SO-8 lead-frame construction with RθJL = 42 °C/W to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 5 V and 12 V input rails in point-of-load converters |
| RDS(on) Q1 / Q2 | 16.4 / 11.8 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 8 A load in 12 V → 1.2 V conversion |
| Qg Q1 / Q2 | 6.7 / 14 nC - Asymmetric gate drive requirement reduces switching loss in Q2 during synchronous rectification |
| trr / Qrr | 12–24 ns / 4.1–8.9 nC - Fast body diode recovery minimizes shoot-through risk and EMI in high-frequency (>500 kHz) buck topologies |
| EAS | 10 / 15 mJ - Validated single-pulse avalanche energy ensures reliability under output short-circuit or startup overcurrent |
| RθJA | 62.5 °C/W - Requires ≥1 in² 2-oz copper pour for 70°C ambient operation at full rated current |
Pinout & Package
SO-8 surface-mount package with exposed drain pad for thermal enhancement; dual-channel layout enables compact half-bridge implementation without external isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Q1 Gate | High-side gate input; requires dedicated gate driver with 10 V capable output and <5 Ω series resistance |
| 2 (S1) | Q1 Source | High-side source node; connects to switch node and must be routed with minimal inductance to reduce ringing |
| 3 (D1) | Q1 Drain | Input rail connection; tied to VIN and shares thermal pad with Q2 drain |
| 4 (D2) | Q2 Drain | Output node connection; ties to inductor and shares thermal pad with Q1 drain |
| 5 (S2) | Q2 Source | Power ground return; connects to output capacitor ground and must be low-inductance path to minimize noise |
| 6 (G2) | Q2 Gate | Low-side gate input; driven by bootstrap or dedicated low-side driver with fast turn-on/turn-off capability |
| 7, 8 (Thermal Pad) | Drain Common | Exposed copper pad soldered to PCB ground plane; primary thermal path for both FETs (RθJL = 42 °C/W) |
Key Features
| Feature | Design Value |
|---|---|
| Dual-channel SO-8 integration | Eliminates discrete half-bridge layout complexity and reduces PCB area by >30% vs. two separate SO-8 MOSFETs |
| Asymmetric RDS(on) and Qg | Optimizes conduction loss in Q1 and switching loss in Q2-enabling >92% efficiency at 20 A in 12 V → 1.2 V buck converter |
| Fully characterized avalanche | Guaranteed 10–15 mJ single-pulse energy withstand without parameter shift-critical for VRM fault tolerance |
| Improved body diode recovery | trr ≤ 24 ns and Qrr ≤ 8.9 nC reduce reverse recovery losses and enable >1 MHz operation in advanced POL designs |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020C reflow profile (peak 260°C); qualified for automated SMT assembly in high-volume manufacturing |
Applications
| Notebook CPU Voltage Regulator | Server Memory DIMM VRM |
|---|---|
Use Scenario: Dual-phase 12 V → 1.2 V conversion supplying Intel Core i7 processor core power with dynamic load steps up to 100 A/µs. IC Role / Device Role / Timing Role: Q1 acts as high-side switch controlling duty cycle; Q2 functions as synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: Achieves 93.5% peak efficiency at 60 A due to combined RDS(on) of 28.2 mΩ and low Qrr-driven switching loss. | Use Scenario: Single-phase 5 V → 1.35 V supply for DDR4 memory modules in 1U rack servers with strict thermal envelope (<40°C rise). IC Role / Device Role / Timing Role: Q1/Q2 operate in complementary 500 kHz PWM mode; shared thermal pad enables uniform junction temperature distribution across both channels. Use Value: Enables 25 W output in 5 mm × 6 mm footprint with <1.2°C/W effective thermal resistance via 2-layer copper pour. |
| GPU Power Delivery on Graphics Cards | Set-Top Box SoC Core Supply |
Use Scenario: Three-phase 12 V → 0.85 V GPU core supply handling transient loads >150 A with <100 ns response time. IC Role / Device Role / Timing Role: Each IRF7907TRPBF provides one phase's high/low-side pair; gate charge asymmetry allows independent gate driver tuning for zero-voltage switching. Use Value: Reduces total phase loss by 1.8 W vs. discrete MOSFET solution, lowering GPU junction temperature by 8°C at full load. | Use Scenario: Compact 5 V → 1.1 V supply for ARM-based media SoC in space-constrained STB chassis with passive cooling only. IC Role / Device Role / Timing Role: Q1/Q2 operate in discontinuous conduction mode (DCM) at 1.2 MHz to minimize output filter size; fast trr prevents cross-conduction during light-load transitions. Use Value: Enables 12 µH inductor + 220 µF ceramic output cap solution-reducing BOM cost by $0.38/unit vs. traditional 500 kHz design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel synchronous buck FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 12.5 / 8.5 mΩ @ 10 V; Qg = 10.5 / 19.5 nC; SO-8 with enhanced thermal pad | Higher efficiency at >15 A but requires tighter gate drive timing due to larger Qgd | Preferred for 1.8 V+ outputs where lower RDS(on) dominates over gate charge trade-off |
| DMN6016LSD-13 | RDS(on) = 16 / 10.5 mΩ @ 10 V; Qg = 7.2 / 13.5 nC; no avalanche rating specified | Lacks EAS validation-requires external overcurrent protection in mission-critical systems | Suitable for cost-sensitive consumer STB designs where fault tolerance is managed at system level |
Compared with Si7852DP-T1-GE3 and DMN6016LSD-13, IRF7907TRPBF offers verified avalanche ruggedness and balanced gate charge asymmetry ideal for unattended VRM deployments, whereas alternatives prioritize either raw efficiency or cost-requiring additional system-level design margins.
Availability
IRF7907TRPBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, server memory DIMM supplies, and graphics card GPU power delivery requiring stable component supply across multi-year production cycles.
Supply support for IRF7907TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and qualification infrastructure.
This part belongs to the HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure where thermal performance and avalanche reliability are critical.
FAQ
What is the maximum recommended gate drive voltage for IRF7907TRPBF?
The absolute maximum VGS rating is ±20 V, but the device is characterized and optimized for 10 V drive. Operation above 12 V yields diminishing RDS(on) improvement while increasing gate oxide stress and ESD risk. For 4.5 V logic-level drive, Q1 RDS(on) rises to 20.5 mΩ and Q2 to 13.7 mΩ-verified in datasheet Fig 17.
Can IRF7907TRPBF be used in a single-ended forward or flyback topology?
No-it is not designed for unidirectional topologies requiring isolated gate drive or high dV/dt immunity. Its dual-channel SO-8 layout assumes synchronous buck operation with common-source switching node. Flyback use would violate safe operating area limits due to lack of integrated snubber and undefined transformer-coupled gate behavior.
How is thermal performance affected when only one channel is actively switching?
When Q1 is active and Q2 is static (or vice versa), thermal resistance remains ~62.5 °C/W because both channels share the same drain thermal pad and package substrate. However, localized heating may occur near the active FET's bond wires; derating to 80% of rated current is advised for sustained single-channel operation above 70°C ambient.
Does IRF7907TRPBF support paralleling multiple units for higher current?
Paralleling is not recommended due to mismatched threshold voltages (VGS(th) = 1.35–2.35 V) and RDS(on) tolerances (±20%), which cause current imbalance exceeding 30% at 25°C. For >20 A applications, use a single higher-rated dual FET like IRF7832TRPBF instead of parallel IRF7907TRPBF units.
IRF7907TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 9.1A, 11A
- Rds On (Max) @ Id, Vgs:
- 16.4mOhm @ 9.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 850pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7907TRPBF FAQ
1.How can I place an order for IRF7907TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7907TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7907TRPBF reliable?
The price and inventory of IRF7907TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7907TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7907TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7907TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7907TRPBF?
IRF7907TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7907TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7907TRPBF?
For technical support, including IRF7907TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7907TRPBF requirements.
6.How does Aetrix verify that IRF7907TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7907TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7907TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7907TRPBF?
All IRF7907TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7907TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7907TRPBF part is unused and in its original packaging.
Return procedure for IRF7907TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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