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Infineon Technologies IRF7910PBF
- Part No.:
- IRF7910PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7910PBF.pdf
- Description:
- MOSFET 2N-CH 12V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,351
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Product details
Overview
IRF7910PBF from Infineon Technologies is a dual-channel 12 V P-channel HEXFET Power MOSFET in SO-8 package, featuring RDS(on) = 15 mΩ @ VGS = −4.5 V, continuous drain current of 10 A at TA = 25°C, and fully characterized avalanche capability (EAS = 100 mJ). It serves as synchronous rectifier and high-side switch in 3.3 V/5 V point-of-load buck converters for networking and computing power management.
For engineers reviewing the IRF7910PBF datasheet, IRF7910PBF pinout, IRF7910PBF application, or IRF7910PBF equivalent, key selection criteria include low gate charge (Qg = 17–26 nC), ultra-low RDS(on) at logic-level drive, SO-8 thermal performance (RθJA = 62.5°C/W), and body diode recovery specs (trr = 50–77 ns, Qrr = 60–90 nC).
Technical Context
This dual P-channel MOSFET integrates two identical enhancement-mode devices in a single SO-8 package, optimized for high-frequency synchronous rectification where low gate drive voltage compatibility and fast switching are critical. Its −12 V VDS rating and −4.5 V threshold enable direct interface with 3.3 V and 5 V controllers without level-shifting.
The device exhibits tightly specified dynamic parameters: Ciss = 1730 pF, Coss = 1340 pF, and Crss = 330 pF at VDS = 6 V, supporting efficient zero-voltage switching (ZVS) design. Avalanche robustness (IAR = 8.0 A, EAS = 100 mJ) ensures reliability under unclamped inductive switching stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - Maximum blocking voltage for low-voltage synchronous buck topologies |
| RDS(on) | 15 mΩ @ VGS = −4.5 V - Enables <15 mW conduction loss at 10 A output current |
| ID (continuous) | 10 A @ TA = 25°C - Supports ≥12 W load in compact SO-8 footprint with board-level heatsinking |
| Qg | 17–26 nC - Reduces gate driver power and enables >1 MHz switching with minimal Miller effect |
| trr / Qrr | 50–77 ns / 60–90 nC - Minimizes body diode reverse recovery loss in hard-switched synchronous rectifiers |
| RθJA | 62.5°C/W - Limits junction rise to ≤62.5°C/W above ambient on standard FR-4 PCB |
Pinout & Package
IRF7910PBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pads for enhanced thermal conduction. Pin numbering follows top-view orientation: Pins 1–4 and 5–8 form two independent P-channel MOSFETs sharing common source terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain 1 (D1) | High-current output node for first MOSFET channel; electrically tied to exposed pad |
| 5, 6, 7, 8 | Drain 2 (D2) | High-current output node for second MOSFET channel; electrically tied to exposed pad |
| G1 | Gate 1 | Control terminal for first channel; requires −4.5 V to fully enhance |
| G2 | Gate 2 | Control terminal for second channel; independent gate drive required |
| S1 | Source 1 | Reference node for first channel; connects to output rail in high-side configuration |
| S2 | Source 2 | Reference node for second channel; may be paralleled with S1 for dual-phase operation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at logic-level drive | 15 mΩ @ −4.5 V enables full enhancement from 3.3 V/5 V controllers without gate boosting |
| Fully characterized avalanche energy | 100 mJ single-pulse rating supports robust operation during transient overloads and inductive turn-off |
| Low gate-to-drain charge (Qgd) | 5.2 nC minimizes Miller-induced shoot-through risk and improves switching controllability |
| Optimized body diode recovery | 60–90 nC Qrr and 50–77 ns trr reduce cross-conduction losses in synchronous rectification |
Applications
| Networking Point-of-Load Converters | Server VRM High-Side Switching |
|---|---|
Use Scenario: 12 V input → 1.2 V/30 A output DC-DC conversion in Ethernet switches and routers. IC Role / Device Role: Dual P-channel MOSFET used as synchronous rectifier pair in interleaved buck stage. Use Value: 15 mΩ RDS(on) reduces conduction loss by >35% vs. comparable 20 mΩ parts, improving efficiency at 30 A load. | Use Scenario: Dual-phase 12 V → 1.8 V VRM supplying CPU core power in enterprise servers. IC Role / Device Role: High-side switch in each phase, driven directly by 5 V PWM controller outputs. Use Value: Low Qg (17–26 nC) allows clean 500 kHz–1 MHz switching with minimal gate driver dissipation. |
| Portable Computing Power Rails | Industrial FPGA I/O Supply |
Use Scenario: 12 V → 3.3 V/5 V auxiliary rail generation in laptops and thin clients. IC Role / Device Role: P-channel high-side switch enabling true "always-on" standby regulation. Use Value: −0.6 to −2.0 V gate threshold ensures reliable turn-on with 3.3 V logic, eliminating external bias circuitry. | Use Scenario: Programmable 12 V → 2.5 V supply for FPGA I/O banks requiring tight voltage tolerance. IC Role / Device Role: Synchronous rectifier in compact, low-profile buck converter on dense PCB layout. Use Value: SO-8 thermal resistance (RθJA = 62.5°C/W) maintains <100°C junction temp at 8 A with minimal copper area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7910DP-T1-GE3 | RDS(on) = 14.5 mΩ @ −4.5 V; Qg = 22 nC; SO-8 with thermally enhanced pad | Higher thermal conductivity (RθJA = 50°C/W) but tighter gate threshold distribution (−1.0 to −2.0 V) | Preferred when board-level thermal management is constrained and tighter VGS(th) tolerance is required. |
| DMC2038LSD-13 | RDS(on) = 16.5 mΩ @ −4.5 V; Qg = 19 nC; dual P-channel in PowerDI3333 package | Smaller footprint (3.3 × 3.3 mm), higher RθJA (100°C/W), no exposed drain pad | Selected for space-constrained designs where SO-8 real estate is unavailable and peak current ≤7 A. |
Compared with Si7910DP-T1-GE3 and DMC2038LSD-13, IRF7910PBF offers balanced trade-offs: lower cost than Si7910DP, superior thermal performance versus DMC2038LSD, and proven avalanche ruggedness critical for unclamped inductive loads.
Availability
IRF7910PBF is available at Aetrix Electronics and suitable for networking point-of-load converters, server VRM high-side switching, and portable computing power rails requiring stable component supply across multi-year production cycles.
Supply support for IRF7910PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7910PBF belongs to Infineon's HEXFET® logic-level P-channel MOSFET product line, engineered specifically for high-efficiency, high-frequency synchronous rectification in low-voltage DC-DC converters.
FAQ
What is the maximum continuous drain current for IRF7910PBF at 70°C ambient temperature?
The maximum continuous drain current is 7.9 A at TA = 70°C with VGS = −4.5 V, derated from 10 A at 25°C due to thermal limits. This value assumes standard SO-8 mounting on FR-4 PCB with 1 inch² copper pour and accounts for RθJA = 62.5°C/W and 1.3 W power dissipation limit at 70°C ambient.
Can IRF7910PBF be used in parallel configurations?
Yes - its negative temperature coefficient of RDS(on) (normalized resistance increases with junction temperature, per Fig 4) promotes natural current sharing between paralleled devices. Designers must match gate drive impedance and layout symmetry to ensure balanced switching and avoid oscillation or uneven stress.
Does IRF7910PBF require a gate resistor for safe operation?
A gate resistor (typically 1.8–10 Ω) is recommended to dampen ringing and control dV/dt during switching. The datasheet specifies switching times (e.g., td(off) = 16 ns) using RG = 1.8 Ω; omitting it risks overshoot, shoot-through, and EMI. No internal gate protection diode is integrated, so external clamping may be needed in high-noise environments.
Is IRF7910PBF RoHS-compliant and lead-free?
Yes - the "PbF" suffix confirms compliance with RoHS Directive 2011/65/EU and lead-free soldering requirements. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1, allowing unlimited floor life at ≤30°C/60% RH.
IRF7910PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 10A
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1730pF @ 6V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7910PBF FAQ
1.How can I place an order for IRF7910PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7910PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7910PBF reliable?
The price and inventory of IRF7910PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7910PBF is usually 5 days.
3.What payment methods are accepted for IRF7910PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7910PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7910PBF?
IRF7910PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7910PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7910PBF?
For technical support, including IRF7910PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7910PBF requirements.
6.How does Aetrix verify that IRF7910PBF is sourced from the original manufacturer or authorized distributors?
All IRF7910PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7910PBF meets industry standards.
7.What is the process for return or replacement of IRF7910PBF?
All IRF7910PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7910PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7910PBF part is unused and in its original packaging.
Return procedure for IRF7910PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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