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Infineon Technologies IRF7910TRPBF
- Part No.:
- IRF7910TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7910TRPBF.pdf
- Description:
- MOSFET 2N-CH 12V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,099
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Product details
Overview
IRF7910TRPBF from Infineon Technologies (formerly International Rectifier) is a dual-channel, N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, rated for 12 V VDS, 15 mΩ RDS(on) at VGS = 4.5 V, and 10 A continuous drain current at TA = 25°C. It serves as a synchronous rectifier or high-side/low-side switch in compact DC-DC converters.
For engineers reviewing the IRF7910TRPBF datasheet, IRF7910TRPBF pinout, IRF7910TRPBF application, or IRF7910TRPBF equivalent, key selection criteria include its ultra-low gate charge (Qg = 17–26 nC), fast switching (tr = 22 ns, tf = 6.3 ns), and fully characterized body diode recovery (Qrr = 60–90 nC) for high-frequency point-of-load regulation.
Technical Context
This dual N-channel MOSFET integrates two identical die in a single SO-8 package with independent source, gate, and drain terminals per channel. Its low 15 mΩ on-resistance at 4.5 V gate drive enables efficient operation with 3.3 V and 5 V logic-level controllers.
The device features fully specified avalanche capability (EAS = 100 mJ, IAR = 8.0 A), tight gate threshold voltage range (0.6–2.0 V), and thermally robust construction with RθJA = 62.5°C/W on standard PCB mounting - optimized for space-constrained netcom and computing power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - Maximum blocking voltage compatible with 12 V input rails and 5 V logic-level gate drivers |
| RDS(on) @ VGS = 4.5 V | 15 mΩ - Enables <150 mW conduction loss at 10 A, critical for thermal management in PoL converters |
| ID (continuous, TA = 25°C) | 10 A - Supports high-current output stages without external heatsinking on standard FR-4 |
| Qg | 17–26 nC - Low gate charge reduces driver power and enables >1 MHz switching in synchronous buck topologies |
| tr/tf | 22 ns / 6.3 ns - Fast edge rates minimize switching transition losses and EMI generation |
| Qrr | 60–90 nC - Quantified reverse recovery charge ensures predictable dead-time design and minimizes shoot-through risk |
| RθJA | 62.5°C/W - Thermal resistance measured on 1-inch² copper pad; defines maximum ambient temperature for safe 2 W dissipation |
Pinout & Package
IRF7910TRPBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012, EIA-481 compliant), with 1.27 mm pitch, 4.9 mm × 6.0 mm footprint, and exposed drain pads for enhanced thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first MOSFET; requires logic-level drive (≤5 V) to achieve full enhancement |
| 2 (S1) | Source of Channel 1 | Return path for Channel 1 current; electrically isolated from S2 unless externally connected |
| 3 (D1) | Drain of Channel 1 | Main current-carrying terminal; internally bonded to exposed leadframe for thermal conduction |
| 4 (D2) | Drain of Channel 2 | Second high-current drain node; shares same thermal pad as D1 in SO-8 package |
| 5 (S2) | Source of Channel 2 | Return path for Channel 2; separate from S1 to support floating half-bridge configurations |
| 6 (G2) | Gate of Channel 2 | Independent gate input; identical electrical characteristics to G1 for matched dual-channel operation |
| 7, 8 (Drain Tie) | Common Drain Connection | Pins 3 and 4 are internally tied to the same drain leadframe; pins 7 and 8 are additional drain terminations for mechanical stability and thermal relief |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 15 mΩ at 4.5 V gate drive - reduces conduction loss by >30% vs. typical 20 mΩ alternatives in same package |
| Low gate charge | Qg = 17–26 nC - cuts gate driver power consumption and simplifies selection of low-cost 3.3 V microcontroller GPIOs |
| Fully characterized body diode | Qrr = 60–90 nC, trr = 50–77 ns - enables precise dead-time calculation in synchronous rectification |
| Avalanche-rated | EAS = 100 mJ - withstands unclamped inductive switching events without failure in buck converter freewheeling phase |
| Logic-level compatible | VGS(th) = 0.6–2.0 V - ensures reliable turn-on with 3.3 V or 5 V supply rails, eliminating need for level-shifting circuitry |
Applications
| Point-of-Load Synchronous Buck Converter | Network Equipment DC-DC Module |
|---|---|
Use Scenario: 12 V input to 1.2 V/10 A output for FPGA or ASIC core supply in telecom line cards. IC Role / Device Role / Timing Role: Dual-channel N-MOSFET used as high-side and low-side switches in synchronous rectification topology. Use Value: 15 mΩ RDS(on) and 22 ns rise time enable >92% efficiency at 1 MHz switching frequency with minimal thermal derating. | Use Scenario: Compact 5 V/6 A auxiliary rail in enterprise switch power subsystems. IC Role / Device Role / Timing Role: Low-side synchronous rectifier paired with external high-side controller to replace Schottky diode. Use Value: Qrr specification eliminates unpredictable reverse recovery spikes, reducing output filter size by 30%. |
| Portable Computing VRM | Industrial Embedded Power Management |
Use Scenario: CPU/GPU voltage regulator in thin client or edge AI module with strict board area constraints. IC Role / Device Role / Timing Role: Dual-channel configuration supports interleaved two-phase operation with shared gate drive timing. Use Value: SO-8 footprint and matched channel parameters simplify layout symmetry and reduce PCB layer count. | Use Scenario: 12 V to 3.3 V conversion for industrial IoT sensor hub with extended temperature requirements. IC Role / Device Role / Timing Role: Primary switching element in isolated or non-isolated buck converter operating across -40°C to +125°C ambient. Use Value: Specified RDS(on) drift (±15% over -55°C to +150°C) ensures stable load regulation without feedback recalibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 12.5 mΩ @ 4.5 V; Qg = 22 nC; SO-8 package | Slightly lower on-resistance but higher Ciss (1950 pF vs. 1730 pF) increases gate drive demand | Preferred where peak efficiency >94% is required and gate driver strength allows higher capacitance |
| DMN3022LSD-13 | RDS(on) = 18 mΩ @ 4.5 V; Qg = 14 nC; dual N-channel in SO-8 | Lower gate charge improves switching speed but higher RDS(on) raises conduction loss above 6 A | Better suited for medium-current (<7 A), high-frequency (>2 MHz) designs where thermal margin is less constrained |
Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7910TRPBF offers the best balance of low RDS(on), moderate Qg, and fully documented avalanche and body diode behavior - making it optimal for production-grade 10 A PoL converters requiring long-term reliability validation.
Availability
IRF7910TRPBF is available at Aetrix Electronics and suitable for point-of-load synchronous buck converters, network equipment DC-DC modules, and portable computing VRMs requiring stable component supply and consistent parametric performance across manufacturing lots.
Supply support for IRF7910TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with emphasis on energy efficiency and system reliability.
The IRF7910TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing, networking, and portable electronics applications.
FAQ
What is the maximum continuous drain current for IRF7910TRPBF at 70°C ambient?
The maximum continuous drain current is 7.9 A at TA = 70°C with VGS = 4.5 V, based on thermal derating from the 2.0 W maximum power dissipation at 25°C and linear derating factor of 16 mW/°C. This value assumes standard PCB mounting on 1-inch² copper area without forced airflow.
Does IRF7910TRPBF have an integrated body diode, and what are its key recovery parameters?
Yes, IRF7910TRPBF includes a built-in parasitic body diode with VSD = 0.70–0.85 V at IS = 8.0 A and TJ = 25°C. Its reverse recovery is fully characterized: Qrr = 60–90 nC and trr = 50–77 ns under specified test conditions (IF = 8.0 A, VR = 12 V, di/dt = 100 A/µs).
Can IRF7910TRPBF be driven directly by a 3.3 V microcontroller GPIO?
Yes - its gate threshold voltage range (0.6–2.0 V) and guaranteed RDS(on) at VGS = 4.5 V ensure full enhancement with 3.3 V logic. However, for optimal switching speed and reduced Miller effect, a dedicated gate driver with ≥100 mA peak output is recommended when operating above 500 kHz.
What is the thermal resistance from junction to ambient (RθJA) under standard test conditions?
RθJA is 62.5°C/W when mounted on a 1-inch² copper pad on FR-4 PCB with no airflow, per JEDEC JESD51-2 and JESD51-7 standards. This value assumes 2-layer board construction and defines the upper limit of allowable power dissipation before exceeding TJ(max) = 150°C.
IRF7910TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 12V
- Current - Continuous Drain (Id) @ 25°C:
- 10A
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1730pF @ 6V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7910TRPBF FAQ
1.How can I place an order for IRF7910TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7910TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7910TRPBF reliable?
The price and inventory of IRF7910TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7910TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7910TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7910TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7910TRPBF?
IRF7910TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7910TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7910TRPBF?
For technical support, including IRF7910TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7910TRPBF requirements.
6.How does Aetrix verify that IRF7910TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7910TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7910TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7910TRPBF?
All IRF7910TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7910TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7910TRPBF part is unused and in its original packaging.
Return procedure for IRF7910TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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