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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8010STRLPBF

Name: IRF8010STRLPBF
Brand: Infineon Technologies
SKU: IRF8010STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8010STRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF8010STRLPBF.pdf

Description:: MOSFET N-CH 100V 80A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:2,650

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Product details

Overview

IRF8010STRLPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 80A N-channel enhancement-mode HEXFET Power MOSFET in D2PAK (TO-263) package, optimized for high-frequency DC-DC converters and motor control. It delivers R_DS(on) = 12 mΩ (typ), Q_g = 81 nC (typ), and C_oss(eff) = 530 pF, enabling low conduction and switching losses in hard-switched SMPS topologies.

For engineers reviewing the IRF8010STRLPBF datasheet, IRF8010STRLPBF pinout, IRF8010STRLPBF application, or IRF8010STRLPBF equivalent, key selection criteria include its validated avalanche energy (E_AS = 260 mJ), fully characterized C_oss and Q_gd, and lead-free compliance per JEDEC J-STD-020.

Technical Context

This MOSFET employs planar silicon process with integrated body diode and is rated for continuous operation up to T_J = 175°C. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) supports standard 10 V gate drive, while low Q_gd/Q_g ratio (26/81 nC) improves switching controllability in synchronous rectification and half-bridge configurations.

The device features fully specified dynamic parameters including t_r = 130 ns, t_f = 120 ns, and trr = 99–150 ns for the intrinsic body diode - critical for ZVS/ZCS design validation and EMI mitigation in high-density power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - maximum blocking voltage for primary-side switches in 48 V input DC-DC and UPS hold-up stages
R_DS(on) max	15 mΩ @ T_J = 100°C - ensures ≤120 W conduction loss at 80 A continuous drain current
I_D continuous	80 A @ T_C = 25°C - supports high-current output rails without parallel devices in compact PCB layouts
Q_g	81 nC typ - enables efficient 100–500 kHz switching with <1 W gate driver power at 10 V drive
C_oss(eff)	530 pF - directly usable in resonant tank calculations for LLC and phase-shifted full-bridge designs
E_AS	260 mJ - verified single-pulse avalanche capability for inductive turn-off stress in motor drives
t_rr	99 ns typ - reduces diode recovery loss and dv/dt-induced shoot-through risk in synchronous buck converters

Pinout & Package

IRF8010STRLPBF is housed in a surface-mount D2PAK (TO-263) package with exposed drain pad for thermal performance. The three-terminal configuration supports high-current PCB mounting with low-inductance source connections.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to copper tab; must be soldered to large thermal pad for R_θJC = 0.57 °C/W performance
Source	Reference node for gate drive and current sensing	Low-inductance connection required to minimize V_GS noise during fast switching
Gate	Control terminal for channel modulation	High-impedance input requiring <120 nC total charge; sensitive to ESD and ringing above 20 V

Key Features

Feature	Design Value
Lead-free construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile (peak 260°C)
Low Q_gd/Q_g ratio	26/81 nC - suppresses Miller-induced false turn-on in high-dv/dt half-bridge environments
Fully characterized C_oss	Includes C_oss(eff) = 530 pF - eliminates iterative capacitor modeling for snubberless flyback and QR PFC
Body diode softness	trr = 99 ns, Q_rr = 460 nC - minimizes voltage overshoot and EMI during freewheeling in synchronous rectifiers
Avalanche-rated	E_AS = 260 mJ - allows safe operation under unclamped inductive switching without external clamping circuits

Applications

Server VRM

Industrial Motor Drive

Use Scenario: 48 V input, 12 V/100 A output multiphase buck converter in AI accelerator server power delivery.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz with 30 ns dead-time control.

Use Value: 12 mΩ R_DS(on) and 130 ns rise time enable >95% efficiency at full load while maintaining thermal margin on 2 oz Cu PCB.

Use Scenario: 3-phase inverter stage for 5 kW servo drive with field-oriented control.

IC Role / Device Role / Timing Role: Low-side IGBT/MOSFET companion switch handling regenerative braking current via body diode conduction.

Use Value: 320 A pulsed source rating and 99 ns trr support bidirectional energy flow with minimal reverse recovery loss.

UPS Inverter

EV Onboard Charger

Use Scenario: 100 V DC-link in-line inverter for 1 kVA double-conversion UPS with battery backup.

IC Role / Device Role / Timing Role: Hard-switched bridge arm switch sustaining repetitive 100 V, 50 A pulses during line-to-battery transfer.

Use Value: 260 mJ E_AS and 175°C junction rating ensure reliability during grid fault transients without derating.

Use Scenario: Primary-side switch in 6.6 kW AC/DC OBC using interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: LLC resonant switch requiring precise C_oss matching and low Q_gd for zero-voltage switching across wide load range.

Use Value: C_oss(eff) = 530 pF and Q_gd = 26 nC allow predictable ZVS boundary extension down to 10% load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N10F7	R_DS(on) = 9.5 mΩ @ 100°C, Q_g = 92 nC, DFN8 5×6 mm package	Lower R_DS(on) but higher gate charge; requires tighter layout due to smaller footprint	Preferred for space-constrained 48 V systems where thermal interface is limited
IXFH80N10P	R_DS(on) = 13.5 mΩ @ 100°C, Q_g = 105 nC, TO-247 package	Larger through-hole package; higher Q_g increases gate drive loss at >300 kHz	Suitable for industrial motor drives needing mechanical robustness and higher creepage

Compared with STL110N10F7 and IXFH80N10P, IRF8010STRLPBF offers optimal balance of low Q_gd, validated C_oss(eff), and D2PAK thermal performance - making it preferred for high-frequency SMPS where layout inductance and thermal management are co-constrained.

Availability

IRF8010STRLPBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, uninterruptible power supplies, and industrial motor control systems requiring stable component supply and long-term lifecycle assurance.

Supply support for IRF8010STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line was originally developed by International Rectifier and continues under Infineon to address high-efficiency, high-reliability power conversion in server, telecom, and industrial equipment.

FAQ

What is the maximum recommended gate drive voltage for IRF8010STRLPBF?

The absolute maximum gate-to-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Operating above 15 V increases gate oxide stress and does not significantly reduce R_DS(on); sustained V_GS > 12 V may accelerate parametric shift over lifetime.

Can IRF8010STRLPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (0.11 V/°C) enables inherent current sharing. Successful parallel operation requires matched gate drive loop inductance (<10 nH), symmetrical PCB layout, and individual gate resistors (≥5 Ω) to damp oscillation.

Is the body diode suitable for continuous conduction mode (CCM) operation?

Yes - the integral body diode is rated for 80 A continuous source current and 320 A pulsed current. Its 99 ns trr and soft recovery (Q_rr = 460 nC) make it viable for CCM synchronous rectification in buck-derived topologies up to 300 kHz.

Does IRF8010STRLPBF require a heatsink when operated at 80 A continuous?

Yes - at 80 A and R_DS(on) = 15 mΩ, conduction loss is ~96 W. With R_θJC = 0.57 °C/W and ambient ≤40°C, a heatsink with R_θSA ≤ 0.6 °C/W is required to maintain T_J ≤ 150°C. Thermal interface material and mounting pressure must be controlled per datasheet Fig 11.

IRF8010STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 260W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF8010STRLPBF FAQ

1.How can I place an order for IRF8010STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8010STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8010STRLPBF reliable?

The price and inventory of IRF8010STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8010STRLPBF is usually 5 days.

3.What payment methods are accepted for IRF8010STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8010STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8010STRLPBF?

IRF8010STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8010STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8010STRLPBF?

For technical support, including IRF8010STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8010STRLPBF requirements.

6.How does Aetrix verify that IRF8010STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF8010STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8010STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF8010STRLPBF?

All IRF8010STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8010STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8010STRLPBF part is unused and in its original packaging.

Return procedure for IRF8010STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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