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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

UMW IRF8113TR

Name: IRF8113TR
Brand: UMW
SKU: IRF8113TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8113TR

Manufacturer:: UMW

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IRF8113TR.pdf

Description:: MOSFET N-CH 30V 17.2A 8SOIC

Quantity:: RFQ Add To RFQ list

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Inventory:6,508

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Product details

Overview

IRF8113TR from Infineon Technologies is a 30V, 17.2A N-channel HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in isolated DC-DC converters and control FET in notebook CPU power stages. It features 4.7 mΩ R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and 100% RG-tested for robust gate drive control.

For engineers reviewing the IRF8113TR datasheet, IRF8113TR pinout, IRF8113TR application, or IRF8113TR equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, characterized avalanche energy (48 mJ), body diode reverse recovery charge (21–32 nC), and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This device operates as a high-efficiency, low-voltage N-channel power switch with fully characterized unclamped inductive switching capability. Its gate threshold voltage (1.5–2.2 V) and low Q_gd/Q_gs1 ratio minimize C_dv/dt turn-on risk in high-dV/dt synchronous buck and flyback topologies.

The SO-8 package enables dual-side cooling via drain-connected leads, supporting continuous 13.8 A current at T_A = 70 °C. Its 600 pF C_oss and 250 pF Cr_ss support fast switching with controlled EMI in 300–1000 kHz DC-DC applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and 12 V output synchronous rectification
R_DS(on) max	5.6 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 15 A RMS in notebook VRMs
Q_g typ.	24 nC - Determines gate driver current requirement (~1.2 A peak for 20 ns rise time)
I_D @ T_A = 70 °C	13.8 A - Continuous current rating under industrial ambient conditions with standard PCB layout
E_AS	48 mJ - Single-pulse avalanche energy rating ensures reliability during load dump or startup transients
Q_rr	21–32 nC - Body diode reverse recovery charge directly impacts shoot-through loss in synchronous rectifiers
R_θJA	50 °C/W - Junction-to-ambient thermal resistance defines heatsinking requirements on 2-layer FR4

Pinout & Package

IRF8113TR is housed in a standard SO-8 surface-mount package with exposed drain pads on pins 1–4 and 7–8 for enhanced thermal conduction. The package supports hand-soldering and reflow profiles per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally paralleled high-current path; connected to PCB copper pour for thermal dissipation
5	Gate (G)	Control terminal requiring low-impedance drive to minimize switching losses and C_dv/dt susceptibility
6	Source (S)	Reference node for gate drive and current sensing; tied to power ground plane in synchronous rectifier layout

Key Features

Feature	Design Value
Very low R_DS(on) at 4.5 V V_GS	Enables efficient operation with 5 V gate drivers common in notebook PWM controllers
Fully characterized avalanche voltage and current	Guarantees safe operation under unclamped inductive switching without external snubbers
100% tested for gate resistance (R_G)	Ensures consistent gate drive timing and minimizes variation in turn-on/turn-off delays
Low Q_gd/Q_gs1 ratio	Reduces risk of parasitic turn-on in high-dV/dt synchronous rectifier nodes

Applications

Notebook CPU Voltage Regulator

Isolated Telecom DC-DC Converter

Use Scenario: High-current, multi-phase 1.0–1.5 V output supply for Intel Core i-series processors.

IC Role / Device Role / Timing Role: Control FET switching at 300–600 kHz with precise dead-time control to prevent shoot-through.

Use Value: 4.7 mΩ R_DS(on) reduces conduction loss by >25% vs. legacy 8 mΩ devices at 15 A load.

Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V output isolated forward converter for telecom shelf systems.

IC Role / Device Role / Timing Role: Synchronous rectifier FET driven by transformer-coupled gate signal, operating with 100 ns dead time.

Use Value: 21 nC Q_rr limits reverse recovery loss to <0.3 W per FET at 500 kHz, improving efficiency by 1.2% over Schottky solutions.

Industrial PLC Power Module

Server VRM Output Stage

Use Scenario: 24 V input, 3.3 V/5 V auxiliary rail generation in programmable logic controller backplanes.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck regulator with integrated controller and current-mode feedback.

Use Value: 48 mJ E_AS withstands 100 µs inductive kick from solenoid loads without failure.

Use Scenario: High-density 12 V to 0.8 V conversion for GPU power delivery in AI accelerator servers.

IC Role / Device Role / Timing Role: Phase-leg high-side FET in 8-phase interleaved buck converter operating at 1 MHz.

Use Value: SO-8 package with drain-connected leads allows dual-side cooling, sustaining 13.8 A at 70 °C ambient without heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 32 nC; SO-8 with enhanced thermal pad	Higher gate charge increases driver loss but lower R_DS(on) improves conduction efficiency above 10 A	Preferred for fixed-frequency >500 kHz designs where conduction loss dominates
IPB80N04S4-02	R_DS(on) = 2.0 mΩ @ 10 V; TO-263 package; no SO-8 footprint compatibility	Requires PCB redesign; superior thermal performance (R_θJA = 30 °C/W) but larger board area	Selected when thermal margin is critical and layout flexibility exists

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF8113TR offers optimal balance of gate drive simplicity (low Q_g), SO-8 compatibility, and proven avalanche ruggedness-making it ideal for space-constrained, cost-sensitive notebook and telecom applications where 13–17 A current and 30 V blocking define the operating envelope.

Availability

IRF8113TR is available at Aetrix Electronics and suitable for notebook CPU power regulation, isolated telecom DC-DC converters, industrial PLC auxiliary supplies, and server VRM output stages requiring stable component supply and long-term lifecycle support.

Supply support for IRF8113TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF8113TR belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in portable computing and communications infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF8113TR is not rated for continuous operation at 100°C case temperature. Its absolute maximum continuous drain current is 13.8 A at T_A = 70°C with standard SO-8 mounting on 2-layer FR4. At higher temperatures, derating applies per the linear derating factor of 2.5 W/°C above 70°C ambient, limiting usable current to approximately 9.5 A at T_C = 100°C with adequate heatsinking.

Does IRF8113TR support 4.5 V gate drive in synchronous rectifier mode?

Yes. The device's R_DS(on) is specified at 5.8 mΩ (max) at V_GS = 4.5 V, enabling reliable synchronous rectification in 5 V gate-driven topologies. Its low gate threshold (1.5–2.2 V) ensures full enhancement even with gate drive droop, and its low Q_gd minimizes C_dv/dt turn-on risk during high dV/dt transitions typical in secondary-side switching nodes.

How is avalanche ruggedness verified for IRF8113TR?

Avalanche ruggedness is verified per JEDEC JESD24-11 using unclamped inductive switching tests. Each unit undergoes 100% production testing for R_G, and the 48 mJ single-pulse E_AS rating is measured at I_AS = 13.3 A, V_DD = 15 V, and T_J = 25°C. Data sheet Fig. 12c confirms E_AS remains ≥25 mJ up to T_J = 125°C, ensuring robustness across industrial temperature ranges.

Can IRF8113TR be used in parallel configurations?

Yes, but with design precautions. Its positive R_DS(on) temperature coefficient (0.024 V/°C) supports current sharing, and matched gate thresholds (1.5–2.2 V) reduce imbalance. However, layout symmetry, individual gate resistors (≥5 Ω), and Kelvin source connections are required to avoid oscillation and unequal dynamic current distribution. Parallel use is validated in Infineon Application Note AN-1084 for notebook multiphase VRMs.

IRF8113TR Specifications

Product attributes: Attribute value

Manufacturer:: UMW

Series:: *

Package/Case:: -

Packaging:

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IRF8113TR FAQ

1.How can I place an order for IRF8113TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8113TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8113TR reliable?

The price and inventory of IRF8113TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8113TR is usually 5 days.

3.What payment methods are accepted for IRF8113TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8113TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8113TR?

IRF8113TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8113TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8113TR?

For technical support, including IRF8113TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8113TR requirements.

6.How does Aetrix verify that IRF8113TR is sourced from the original manufacturer or authorized distributors?

All IRF8113TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8113TR meets industry standards.

7.What is the process for return or replacement of IRF8113TR?

All IRF8113TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF8113TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8113TR part is unused and in its original packaging.

Return procedure for IRF8113TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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