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Infineon Technologies IRF8113TRPBF-1
- Part No.:
- IRF8113TRPBF-1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF8113TRPBF-1.pdf
- Description:
- MOSFET N-CH 30V 17.2A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,092
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Product details
Overview
IRF8113TRPBF-1 from Infineon Technologies is a 30 V, 17.2 A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converters and high-efficiency DC/DC power stages. It features 4.7 mΩ typical RDS(on) at VGS = 10 V, 24 nC total gate charge, and integrated body diode with 34 ns reverse recovery time.
For engineers reviewing the IRF8113TRPBF-1 datasheet, IRF8113TRPBF-1 pinout, IRF8113TRPBF-1 application, or IRF8113TRPBF-1 equivalent, key selection criteria include RDS(on) vs. temperature stability, Qgd/Qgs1 ratio for Cdv/dt immunity, body diode Qrr (21–32 nC), and SO-8 thermal resistance (RθJA = 50 °C/W max).
Technical Context
This MOSFET operates as a low-side synchronous rectifier or control FET in non-isolated DC/DC topologies. Its gate threshold voltage (1.5–2.2 V) enables 4.5 V logic-level drive compatibility, while its 0.024 V/°C breakdown voltage tempco ensures stable BVDSS across industrial temperature range (−55 to +150 °C).
The device exhibits strong avalanche capability (EAS = 48 mJ) and uses trench-gate HEXFET architecture to minimize conduction and switching losses. Its Crss/Ciss ratio (250/2910 pF) and Qgd/Qgs1 ≈ 1.37 support robust noise immunity in high-dV/dt node switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V and 24 V input DC/DC systems |
| RDS(on) @ VGS = 10 V | 4.7 mΩ typ - Enables ≤1.4 W conduction loss at 17.2 A continuous drain current |
| Qg | 24 nC typ - Determines gate driver current requirement and switching speed trade-off |
| Qrr | 21–32 nC - Directly impacts shoot-through risk and loss transfer to high-side FET in sync buck |
| RθJA | 50 °C/W max - Limits junction rise to ≤85 °C at 1.6 W dissipation in still air SO-8 layout |
| VGS(th) | 1.5–2.2 V - Ensures reliable turn-on with 3.3 V or 5 V PWM controllers |
| Coss | 600 pF - Influences zero-voltage switching feasibility and resonant tank behavior |
Pinout & Package
IRF8113TRPBF-1 is housed in an industry-standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin numbering follows top-view orientation per datasheet Figure 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Drain (D) | Parallel-connected internal drain terminals - tied to PCB copper pour for thermal and current handling |
| 5 | Gate (G) | Control terminal - requires low-impedance drive due to 24 nC Qg and 0.8 Ω RG |
| 6 | Source (S) | Power return path - serves as reference for gate drive and current sensing in low-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| SO-8 footprint | Enables multi-source procurement and drop-in replacement without PCB redesign |
| RDS(on) tempco | Positive coefficient (0.024 V/°C BVDSS shift) improves current sharing in parallel configurations |
| Body diode trr | 34–51 ns - Reduces dead-time loss and EMI in synchronous rectification |
| MSL1 rating | Supports lead-free reflow without moisture-induced popcorn failure |
| Avalanche rated | 48 mJ single-pulse energy - withstands inductive switching transients without derating |
Applications
| Server VRM Power Stage | Industrial PLC I/O Module |
|---|---|
Use Scenario: High-current, high-frequency (300–1 MHz) point-of-load regulation for CPU/GPU cores. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase interleaved buck converter. Use Value: 4.7 mΩ RDS(on) and 24 nC Qg reduce conduction + switching loss by ≥12% vs. legacy 6.5 mΩ parts at 15 A. | Use Scenario: 24 V DC input power conversion for isolated digital output drivers and analog sensor interfaces. IC Role / Device Role / Timing Role: Primary switch in compact 12 V/5 V secondary buck stage with tight thermal envelope. Use Value: MSL1 qualification and −55 to +150 °C TJ rating ensure reliability in unventilated control cabinets. |
| Automotive ADAS Camera Module | Telecom Remote Radio Unit |
Use Scenario: Compact 5 V rail generation from 12 V battery supply in vision processing subsystems. IC Role / Device Role / Timing Role: Control FET in 2 MHz fixed-frequency buck regulator with light-load efficiency priority. Use Value: 1.5–2.2 V VGS(th) enables direct drive from automotive-grade microcontroller GPIOs without level-shifting. | Use Scenario: Intermediate bus conversion (48 V → 12 V) in outdoor base station power distribution. IC Role / Device Role / Timing Role: High-reliability power switch in thermally constrained outdoor enclosure with limited airflow. Use Value: 48 mJ EAS rating and 135 A pulsed drain current support surge immunity during lightning-induced transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL11DN3LLH6 | RDS(on) = 4.5 mΩ @ 10 V; Qg = 22 nC; SO-8 but no exposed drain pad | Lacks integrated thermal pad - requires larger copper area for same RθJA | Prefer when board space allows extended thermal relief; lower Qg reduces gate drive loss |
| DMN3029LSD-13 | RDS(on) = 5.8 mΩ @ 10 V; Qrr = 45 nC; higher Crss (320 pF) | Higher Qrr increases shoot-through risk in fast-switching sync buck | Acceptable only in <500 kHz designs with conservative dead-time tuning |
Compared with STL11DN3LLH6 and DMN3029LSD-13, IRF8113TRPBF-1 delivers superior thermal performance via exposed drain pad, tighter Qrr control (21–32 nC), and optimal Qgd/Qgs1 ratio for Cdv/dt immunity-making it preferred for >1 MHz, high-density power stages.
Availability
IRF8113TRPBF-1 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC I/O modules, automotive ADAS camera power supplies, and telecom remote radio units requiring stable component supply and long-term lifecycle support.
Supply support for IRF8113TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, industrial, and automotive power systems.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The IRF8113TRPBF-1 supports 13.8 A continuous drain current at TA = 70°C with VGS = 10 V, based on SO-8 package thermal limits and RDS(on) derating. This value assumes standard JEDEC 2-layer board layout with 1 in² copper pour under the exposed drain pad.
Does this MOSFET require a gate resistor for stability?
Yes-a 5–10 Ω series gate resistor is recommended to dampen ringing caused by Lg–Ciss resonance and prevent spurious turn-on from high dV/dt coupling. The device's 0.8 Ω intrinsic gate resistance alone is insufficient for robust operation in >500 kHz switching applications.
Can IRF8113TRPBF-1 be used in parallel configurations?
Yes-its positive RDS(on) temperature coefficient and matched VGS(th) distribution (1.5–2.2 V) enable stable current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling via shared copper pour to maintain ΔTJ < 5 °C between devices.
Is the body diode suitable for reverse recovery in synchronous rectification?
Yes-the body diode has specified trr = 34–51 ns and Qrr = 21–32 nC at IF = 13.3 A, making it suitable for synchronous rectification up to 2 MHz with appropriate dead-time control. Its soft recovery characteristic minimizes voltage overshoot during commutation.
IRF8113TRPBF-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 17.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 17.2A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2910 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
IRF8113TRPBF-1 FAQ
1.How can I place an order for IRF8113TRPBF-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8113TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8113TRPBF-1 reliable?
The price and inventory of IRF8113TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8113TRPBF-1 is usually 5 days.
3.What payment methods are accepted for IRF8113TRPBF-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8113TRPBF-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8113TRPBF-1?
IRF8113TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8113TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8113TRPBF-1?
For technical support, including IRF8113TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8113TRPBF-1 requirements.
6.How does Aetrix verify that IRF8113TRPBF-1 is sourced from the original manufacturer or authorized distributors?
All IRF8113TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8113TRPBF-1 meets industry standards.
7.What is the process for return or replacement of IRF8113TRPBF-1?
All IRF8113TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF8113TRPBF-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8113TRPBF-1 part is unused and in its original packaging.
Return procedure for IRF8113TRPBF-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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