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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF820AL

Name: IRF820AL
Brand: Vishay Siliconix
SKU: IRF820AL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF820AL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF820AL.pdf

Description:: MOSFET N-CH 500V 2.5A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF820AL from Vishay Siliconix is a 500 V, 2.5 A N-channel power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in SMPS and UPS systems. It delivers R_DS(on) ≤ 3.0 Ω at V_GS = 10 V, Q_g = 17 nC, and 140 mJ single-pulse avalanche energy, enabling robust operation in hard-switched forward and bridge topologies.

For engineers reviewing the IRF820AL datasheet, IRF820AL pinout, IRF820AL application, or IRF820AL equivalent, key selection criteria include its 500 V V_DS, 2.5 A continuous drain current at T_C = 25 °C, 2.5 °C/W junction-to-case thermal resistance, dV/dt ruggedness of 3.4 V/ns, and body diode recovery time of 330–500 ns - all critical for reliable high-frequency power conversion design.

Technical Context

This device uses planar vertical DMOS technology with fully characterized avalanche performance and effective output capacitance (C_{oss eff.} = 28 pF). Its gate threshold voltage (2.0–4.5 V) and low Q_gd/Q_g ratio (8.5/17 nC) support stable turn-on and reduced Miller-induced shoot-through risk in half-bridge configurations.

The IRF820AL integrates a fast-recovery body diode (t_rr = 330–500 ns, Q_rr = 760–1140 nC) and exhibits linear SOA behavior up to 10 A pulsed drain current. Thermal design is enabled by R_thJC = 2.5 °C/W and validated peak diode recovery dV/dt capability under controlled test conditions (R_g = 25 Ω, I_SD ≤ 2.5 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline 400 V DC bus applications without derating
R_DS(on) max	3.0 Ω @ V_GS = 10 V - determines conduction loss in continuous 2.5 A loads at 25 °C case temperature
Q_g max	17 nC - defines gate drive power requirement and switching speed in 400 V, 2.5 A hard-switching conditions
E_AS	140 mJ - enables unclamped inductive switching survival in flyback or forward converter snubberless designs
t_rr	330–500 ns - sets minimum dead-time requirement to avoid cross-conduction in synchronous rectification or bridge legs
R_thJC	2.5 °C/W - allows direct heatsink mounting for thermal management in 50 W dissipation scenarios
I_D cont.	2.5 A @ T_C = 25 °C - defines maximum steady-state current before thermal limiting at rated case temperature

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad; 3-pin configuration (G, D, S), drain-connected tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≥10 V drive for full enhancement; gate leakage ≤ ±100 nA at ±30 V
D	Drain	Main high-voltage terminal; electrically connected to exposed thermal pad; rated for 500 V blocking
S	Source	Power return path and gate reference; body diode anode; supports 2.5 A continuous reverse recovery current

Key Features

Feature	Design Value
Low Q_g (17 nC)	Reduces gate driver complexity and switching losses in 100–500 kHz SMPS designs
Characterized C_{oss eff.} (28 pF)	Enables accurate soft-switching timing prediction and ZVS transition analysis
Avalanche-rated (140 mJ E_AS)	Eliminates need for external clamping in inductive load switching with L = 45 mH
High dV/dt immunity (3.4 V/ns)	Prevents false turn-on during fast voltage transients in high-noise bridge environments
Body diode t_rr & Q_rr specified	Supports reliable synchronous rectification and bidirectional current handling in LLC resonant converters

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in two-transistor forward converter operating from 375 V DC bus. IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET performing hard-switched PWM power transfer at 100–200 kHz. Use Value: 500 V V_DS rating and 140 mJ E_AS ensure safe operation during line surges and transformer reset spikes without snubber circuits.	Use Scenario: Inverter stage H-bridge switch in online double-conversion UPS delivering 1 kVA output. IC Role / Device Role / Timing Role: Fast-switching power transistor controlling AC output waveform synthesis via SPWM modulation. Use Value: 330–500 ns body diode recovery and 3.4 V/ns dV/dt ruggedness prevent shoot-through and commutation failure during polarity reversal.
High-Speed Power Switching	Industrial Motor Drive Stage
Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules switching 24–48 V DC loads. IC Role / Device Role / Timing Role: Low-duty-cycle, high-reliability power switch activated by microcontroller GPIO with optocoupler isolation. Use Value: 2.5 A continuous current and 10 A pulsed rating accommodate inrush currents while maintaining <1.6 V forward drop in body diode conduction mode.	Use Scenario: Brake chopper switch in 48 V DC bus servo drive dissipating regenerative energy into braking resistor. IC Role / Device Role / Timing Role: Unidirectional energy dump switch triggered during deceleration events with millisecond pulse duration. Use Value: 2.5 °C/W R_thJC and 50 W P_D rating allow direct heatsink mounting for transient 100 W power bursts without thermal runaway.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in two-transistor forward converter operating from 375 V DC bus.

IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET performing hard-switched PWM power transfer at 100–200 kHz.

Use Value: 500 V V_DS rating and 140 mJ E_AS ensure safe operation during line surges and transformer reset spikes without snubber circuits.

Use Scenario: Inverter stage H-bridge switch in online double-conversion UPS delivering 1 kVA output.

IC Role / Device Role / Timing Role: Fast-switching power transistor controlling AC output waveform synthesis via SPWM modulation.

Use Value: 330–500 ns body diode recovery and 3.4 V/ns dV/dt ruggedness prevent shoot-through and commutation failure during polarity reversal.

High-Speed Power Switching

Industrial Motor Drive Stage

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules switching 24–48 V DC loads.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-reliability power switch activated by microcontroller GPIO with optocoupler isolation.

Use Value: 2.5 A continuous current and 10 A pulsed rating accommodate inrush currents while maintaining <1.6 V forward drop in body diode conduction mode.

Use Scenario: Brake chopper switch in 48 V DC bus servo drive dissipating regenerative energy into braking resistor.

IC Role / Device Role / Timing Role: Unidirectional energy dump switch triggered during deceleration events with millisecond pulse duration.

Use Value: 2.5 °C/W R_thJC and 50 W P_D rating allow direct heatsink mounting for transient 100 W power bursts without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF820ASPbF	Same silicon die, identical electrical specs, but in I2PAK (TO-262) through-hole package	Requires PCB through-hole mounting and wave soldering; no thermal pad; higher R_thJC (3.0 °C/W)	Select when legacy through-hole assembly or mechanical retention via screw mount is required
SiHF820AL-GE3	Lead (Pb)-free and halogen-free version; identical R_DS(on), Q_g, and avalanche ratings; RoHS-compliant terminations	Required for EU WEEE/RoHS and China RoHS compliance; same thermal and switching performance	Select for new designs targeting environmental compliance without performance trade-offs

Compared with IRF820AL, IRF820ASPbF offers identical electrical behavior but demands through-hole layout and delivers slightly lower thermal performance, while SiHF820AL-GE3 maintains full functional equivalence with certified green materials - making it the preferred drop-in replacement for compliance-driven production.

Availability

IRF820AL is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed industrial switching applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRF820AL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF820AL belongs to Vishay's high-voltage power MOSFET product line, engineered for ruggedness and consistency in offline AC/DC conversion, UPS inverters, and industrial motor control where avalanche capability and dV/dt immunity are mission-critical.

FAQ

What is the maximum continuous drain current rating for the IRF820AL at 100 °C case temperature?

The IRF820AL supports 1.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be verified against actual board-level thermal resistance and ambient conditions. The IRF820AL's R_thJC = 2.5 °C/W enables this rating when mounted on a properly sized heatsink with low interface resistance.

Does the IRF820AL have a fully characterized body diode, and what are its key recovery parameters?

Yes, the IRF820AL features a fully characterized intrinsic body diode with t_rr = 330–500 ns and Q_rr = 760–1140 nC at T_J = 25 °C, I_F = 2.5 A, and dI/dt = 100 A/μs. These values are measured and documented in the datasheet, enabling precise dead-time calculation in bridge configurations. The IRF820AL's body diode performance is integral to its use in bidirectional switching and freewheeling paths.

Is the IRF820AL RoHS-compliant, and what is its lead finish?

The IRF820AL is a lead (Pb)-containing part and therefore not RoHS-compliant per EU Directive 2011/65/EU. Its terminations use standard SnPb plating. For RoHS-compliant alternatives, consider the SiHF820AL-GE3, which shares identical electrical and thermal specifications but uses lead-free, halogen-free terminations verified to Vishay specification 99912.

What is the gate threshold voltage range for the IRF820AL, and how does it affect drive requirements?

The IRF820AL has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.5 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. The IRF820AL is not a logic-level device; driving it below 5 V risks incomplete enhancement and excessive R_DS(on), so 10 V is recommended for full performance across temperature and process variation.

Can the IRF820AL be used in avalanche mode, and what is its single-pulse energy rating?

Yes, the IRF820AL is fully rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (E_AS) is 140 mJ under standardized test conditions (L = 45 mH, R_g = 25 Ω, I_AS = 2.5 A). This rating is validated per JEDEC standards and enables use in circuits where inductive energy must be safely absorbed without external clamping - a key feature confirmed in the IRF820AL datasheet revision D.

IRF820AL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

IRF820AL FAQ

1.How can I place an order for IRF820AL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF820AL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF820AL reliable?

The price and inventory of IRF820AL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF820AL is usually 5 days.

3.What payment methods are accepted for IRF820AL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF820AL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF820AL?

IRF820AL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF820AL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF820AL?

For technical support, including IRF820AL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF820AL requirements.

6.How does Aetrix verify that IRF820AL is sourced from the original manufacturer or authorized distributors?

All IRF820AL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF820AL meets industry standards.

7.What is the process for return or replacement of IRF820AL?

All IRF820AL units undergo pre-shipment inspection (PSI). If there is an issue with IRF820AL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF820AL part is unused and in its original packaging.

Return procedure for IRF820AL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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