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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF820S

Name: IRF820S
Brand: Vishay Siliconix
SKU: IRF820S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF820S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF820S.pdf

Description:: MOSFET N-CH 500V 2.5A D2PAK

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Product details

Overview

IRF820S from Vishay Siliconix is a 500 V, 2.5 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and repetitive avalanche rating-designed for high-voltage AC-DC flyback and offline SMPS primary-side switching.

For engineers reviewing the IRF820S datasheet, IRF820S pinout, IRF820S application, or IRF820S equivalent, this page delivers verified electrical specs, thermal derating data, diode recovery characteristics, and real-world substitution guidance for reliable high-voltage power stage design.

Technical Context

The IRF820S employs a third-generation silicon process optimized for ruggedized high-voltage operation, with dynamic dV/dt rating up to 3.5 V/ns and intrinsic body diode recovery time of 260–520 ns. Its 2.5 Ω thermal resistance from junction-to-case enables 50 W continuous dissipation at T_C = 25 °C.

Designed for unclamped inductive switching, it supports single-pulse avalanche energy of 210 mJ and repetitive avalanche energy of 5.0 mJ, with gate threshold voltage tightly specified between 2.0 V and 4.0 V-ensuring stable turn-on across temperature and manufacturing variation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands full mains-referenced DC bus in 230 VAC offline converters without derating.
R_DS(on)	3.0 Ω @ V_GS = 10 V - Enables low conduction loss in <2.5 A primary-side switch applications.
Q_g	24 nC - Determines gate drive power requirement; compatible with standard 10 V logic-level drivers.
I_D (continuous)	2.5 A @ T_C = 25 °C - Defines maximum steady-state current before thermal limiting at case temperature.
E_AS	210 mJ - Specifies single-pulse avalanche robustness during transformer leakage energy discharge.
T_J range	−55 to +150 °C - Supports industrial and extended-temperature operation without derating.
R_thJC	2.5 °C/W - Enables accurate junction temperature estimation from measured case temperature.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current, high-voltage PCB mounting.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level signal; 3.3 nC gate-source charge enables fast, low-power turn-on.
D (Drain)	High-voltage output terminal	Connected to primary winding and HV DC bus; electrically tied to exposed thermal pad.
S (Source)	Power return / reference node	Serves as local ground for gate drive; internal source inductance (7.5 nH) affects switching ringing.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 5.0 mJ repetitive avalanche energy-enables reliable operation under transient overloads without external snubbers.
Dynamic dV/dt rating	3.5 V/ns immunity prevents false turn-on during high-slew-rate voltage transients in flyback transformer reset.
Fast switching	Turn-on delay 8.0 ns, rise time 8.6 ns, fall time 16 ns-minimizes switching losses in 65–100 kHz SMPS designs.
Body diode recovery	trr = 260–520 ns with Qrr = 0.70–1.4 μC-reduces reverse recovery loss and EMI in discontinuous conduction mode (DCM) operation.
Surface mount	D2PAK footprint allows automated assembly and high thermal conductivity via copper pour under exposed drain pad.

Applications

Offline AC-DC Adapters	Flyback SMPS Primary Switch
Use Scenario: 230 VAC input, 12–24 V output, 30–60 W adapter with primary-side regulation. IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer from primary to secondary during each switching cycle. Use Value: 500 V V_DS rating eliminates need for voltage clamping; 3.0 Ω R_DS(on) maintains >85% efficiency at full load.	Use Scenario: Isolated industrial power supply with reinforced insulation and IEC 60950/62368 compliance. IC Role / Device Role / Timing Role: Primary-side power switch operating in discontinuous conduction mode (DCM) with zero-voltage switching assist. Use Value: Repetitive avalanche capability absorbs leakage inductance spikes without snubber loss; 210 mJ E_AS ensures single-event robustness.
LED Driver Power Stage	Industrial Control Power Supply
Use Scenario: Constant-current LED driver for street lighting with universal AC input and surge immunity. IC Role / Device Role / Timing Role: Primary-side switching element in quasi-resonant flyback topology handling 3 kV surge events. Use Value: 3.5 V/ns dV/dt rating prevents spurious turn-on during line surges; −55 to +150 °C T_J range supports outdoor ambient extremes.	Use Scenario: 24 V system power supply in PLC or motor drive control board with long-term reliability requirements. IC Role / Device Role / Timing Role: Main switching transistor in auxiliary offline converter powering microcontroller, I/O, and isolation circuitry. Use Value: 2.5 °C/W R_thJC enables stable thermal performance on FR-4 PCB with 1"² copper area; RoHS-compliant Pb-free variant available.

Offline AC-DC Adapters

Flyback SMPS Primary Switch

Use Scenario: 230 VAC input, 12–24 V output, 30–60 W adapter with primary-side regulation.

IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer from primary to secondary during each switching cycle.

Use Value: 500 V V_DS rating eliminates need for voltage clamping; 3.0 Ω R_DS(on) maintains >85% efficiency at full load.

Use Scenario: Isolated industrial power supply with reinforced insulation and IEC 60950/62368 compliance.

IC Role / Device Role / Timing Role: Primary-side power switch operating in discontinuous conduction mode (DCM) with zero-voltage switching assist.

Use Value: Repetitive avalanche capability absorbs leakage inductance spikes without snubber loss; 210 mJ E_AS ensures single-event robustness.

LED Driver Power Stage

Industrial Control Power Supply

Use Scenario: Constant-current LED driver for street lighting with universal AC input and surge immunity.

IC Role / Device Role / Timing Role: Primary-side switching element in quasi-resonant flyback topology handling 3 kV surge events.

Use Value: 3.5 V/ns dV/dt rating prevents spurious turn-on during line surges; −55 to +150 °C T_J range supports outdoor ambient extremes.

Use Scenario: 24 V system power supply in PLC or motor drive control board with long-term reliability requirements.

IC Role / Device Role / Timing Role: Main switching transistor in auxiliary offline converter powering microcontroller, I/O, and isolation circuitry.

Use Value: 2.5 °C/W R_thJC enables stable thermal performance on FR-4 PCB with 1"² copper area; RoHS-compliant Pb-free variant available.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NB50FP	500 V, 4.4 A, R_DS(on) = 1.2 Ω @ 10 V, TO-220FP package, no avalanche rating	Higher current but lower avalanche ruggedness; requires external clamping in flyback reset	Prefer when higher continuous current is needed and thermal management allows TO-220FP mounting; not drop-in due to different package and missing avalanche spec.
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, TO-220, logic-level gate, no avalanche rating	Lower voltage rating limits use to DC-DC or low-line AC-DC only; unsuitable for 230 VAC direct rectification	Select only for <100 V DC input systems where ultra-low R_DS(on) dominates; incompatible with IRF820S's 500 V primary-side role.

Compared with STP5NB50FP and IXTP50N10P, the IRF820S uniquely combines 500 V rating, repetitive avalanche capability, and D2PAK surface-mount compatibility-making it the only option among the three qualified for rugged, compact, high-voltage flyback primary switches without layout or protection circuit changes.

Availability

IRF820S is available at Aetrix Electronics and suitable for offline AC-DC adapters, flyback SMPS primary stages, and industrial control power supplies requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for IRF820S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous qualification standards.

The IRF820S belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for rugged, high-efficiency offline switching power supplies where avalanche tolerance and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRF820S at 100 °C case temperature?

The IRF820S supports 1.6 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the D2PAK package and must be validated against actual PCB layout and heatsinking. The IRF820S datasheet specifies linear derating of 0.40 W/°C above 25 °C case temperature, confirming safe operation within thermal design margins when properly mounted.

Does IRF820S have a specified body diode reverse recovery time (t_rr)?

Yes, the IRF820S has a body diode reverse recovery time of 260–520 ns at T_J = 25 °C, I_F = 2.1 A, and dI/dt = 100 A/μs. This parameter is explicitly listed in the "Drain-Source Body Diode Characteristics" section of the Vishay datasheet (Document Number: 91060). The IRF820S body diode recovery behavior directly impacts EMI and efficiency in DCM flyback topologies.

Is IRF820S RoHS-compliant and halogen-free?

Yes, the IRF820S is offered in both lead (Pb)-free and halogen-free versions, designated by suffixes such as "-GE3" (e.g., SiHF820S-GE3). The Vishay datasheet confirms material categorization per Doc. #99912, and the IRF820S ordering information explicitly lists "Lead (Pb)-free and halogen-free" variants. Always verify the specific reel or tape-and-reel part number (e.g., IRF820STRRPbF) for compliance status before procurement.

What is the gate threshold voltage range for IRF820S?

The IRF820S has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA, as specified in the "SPECIFICATIONS" table. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction near 0 V. The IRF820S threshold is not logic-level (i.e., not guaranteed at 5 V), so 10 V drive is required for full R_DS(on) performance.

Can IRF820S be paralleled with identical units for higher current capacity?

Yes, the IRF820S is explicitly designed for ease of paralleling, as noted in its "FEATURES" list. Its positive temperature coefficient of R_DS(on) (confirmed in Fig. 4: Normalized On-Resistance vs. Temperature) ensures current sharing stability across devices. When paralleling IRF820S units, match gate resistors and minimize layout asymmetry to avoid dynamic imbalance-critical for maintaining reliability in high-current flyback or forward converters.

IRF820S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF820S FAQ

1.How can I place an order for IRF820S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF820S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF820S reliable?

The price and inventory of IRF820S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF820S is usually 5 days.

3.What payment methods are accepted for IRF820S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF820S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF820S?

IRF820S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF820S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF820S?

For technical support, including IRF820S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF820S requirements.

6.How does Aetrix verify that IRF820S is sourced from the original manufacturer or authorized distributors?

All IRF820S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF820S meets industry standards.

7.What is the process for return or replacement of IRF820S?

All IRF820S units undergo pre-shipment inspection (PSI). If there is an issue with IRF820S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF820S part is unused and in its original packaging.

Return procedure for IRF820S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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