Vishay Siliconix IRF820STRL

Overview

IRF820STRL from Vishay Siliconix is a 500 V, 2.5 A N-channel power MOSFET in D2PAK (TO-263) surface-mount package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and repetitive avalanche rating-designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters.

For engineers reviewing the IRF820STRL datasheet, IRF820STRL pinout, IRF820STRL application, or IRF820STRL equivalent, this part supports fast-switching flyback and forward converter topologies requiring ruggedized 500 V blocking capability, low conduction loss at moderate current, and stable thermal performance on PCB-mounted heatsinking.

Technical Context

This third-generation power MOSFET employs planar V-groove technology to achieve optimized trade-offs between switching speed, avalanche robustness, and on-resistance. Its dynamic dV/dt rating of 3.5 V/ns and body diode reverse recovery time of 260–520 ns enable reliable operation in hard-switched inductive circuits without external snubbers.

The device integrates a monolithic body diode with 1.6 V forward voltage at 2.5 A and 2.5 A continuous source-drain current rating. Thermal design is supported by 2.5 °C/W junction-to-case resistance and validated PCB-mount power dissipation of 3.1 W under standard 1" FR-4 layout conditions.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with thermally enhanced exposed drain pad; 3-terminal configuration optimized for high-current PCB routing and thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP5NK50ZFP and IXTP50N10P, the IRF820STRL uniquely balances 500 V capability, D2PAK thermal performance, and cost-effective surface-mount integration for <30 W offline power conversion-neither alternative matches its combination of voltage rating, package type, and board-level power density.

Availability

IRF820STRL is available at Aetrix Electronics and suitable for offline AC-DC adapters, flyback power supplies, and LED driver circuits requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for IRF820STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRF820STRL belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for rugged, cost-sensitive offline power conversion where avalanche tolerance and surface-mount thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRF820STRL at 100 °C case temperature?

The IRF820STRL supports 1.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects real-world thermal limitations on a standard PCB mount and must be used-not the 2.5 A rating at 25 °C-for thermal design validation in enclosed or high-ambient environments where the IRF820STRL operates near its thermal limit.

Does IRF820STRL have avalanche capability, and how is it rated?

Yes, the IRF820STRL is repetitively avalanche rated with 5.0 mJ energy per pulse and single-pulse avalanche energy of 210 mJ. These values are measured under defined test conditions (V_DD = 50 V, L = 60 mH, I_AS = 2.5 A) and confirm the device can safely absorb inductive energy during transformer reset or fault events without degradation-making IRF820STRL suitable for unclamped flyback topologies.

What is the gate threshold voltage range for IRF820STRL, and why does it matter?

The IRF820STRL has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C. This range ensures reliable turn-on with standard 10 V gate drive while preventing accidental activation from noise or leakage currents. Designers must verify gate drive voltage exceeds 4.0 V to guarantee full enhancement and minimize R_DS(on)-critical for achieving the specified 3.0 Ω on-resistance in the IRF820STRL's final application.

Can IRF820STRL be paralleled with other devices, and what design considerations apply?

Yes, the IRF820STRL is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. To ensure stability, use matched gate resistors (≤18 Ω), minimize layout asymmetry in source paths, and maintain equal thermal coupling across devices. The IRF820STRL's low Q_gd/Q_g ratio further enhances parallel operation by reducing susceptibility to oscillation during switching transitions.

What is the recommended PCB footprint for IRF820STRL in D2PAK package?

Vishay specifies a recommended minimum pad layout for the IRF820STRL's D2PAK package: 0.420" × 0.355" (10.67 mm × 9.02 mm) for the main drain pad, with 0.145" (3.68 mm) wide source/gate pads and 0.200" (5.08 mm) spacing between terminals. Use thermal vias under the drain pad and ≥2 oz copper to achieve the rated 3.1 W PCB-mount power dissipation-deviations reduce thermal performance and may cause premature IRF820STRL failure.