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Vishay Siliconix IRF830AL
- Part No.:
- IRF830AL
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF830AL.pdf
- Description:
- MOSFET N-CH 500V 5A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,417
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Product details
Overview
IRF830AL from Vishay Siliconix is a 500 V, 5.0 A N-channel power MOSFET in I2PAK (TO-262) package, featuring 1.40 Ω RDS(on) at VGS = 10 V, 24 nC total gate charge, and 230 mJ single-pulse avalanche energy-designed for high-voltage switching in SMPS half-bridge topologies.
For engineers reviewing the IRF830AL datasheet, IRF830AL pinout, IRF830AL application, or IRF830AL equivalent, this page delivers verified electrical ratings, thermal resistance (RthJC = 1.7 °C/W), diode recovery characteristics (trr = 430–650 ns), and real-world SMPS topology compatibility without extrapolation.
Technical Context
The IRF830AL employs a planar vertical DMOS structure optimized for high-voltage ruggedness and controlled dV/dt immunity (5.3 V/ns peak diode recovery). Its gate threshold voltage (2.0–4.5 V) and low Qgd/Qg ratio (11/24 nC) support stable hard-switching operation under 400 V bus conditions.
It integrates an intrinsic body diode with 5.0 A continuous source-drain current rating and characterized reverse recovery charge (Qrr = 2.0–3.0 μC), enabling reliable unclamped inductive switching in forward and bridge converters without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports 400 V DC bus designs with 25 % margin for transients |
| RDS(on) max | 1.40 Ω at VGS = 10 V - enables ≤3.2 A continuous conduction at TC = 100 °C with <10 W conduction loss |
| Qg max | 24 nC - allows direct drive from standard PWM controllers without gate boosters |
| EAS | 230 mJ - withstands unclamped inductive energy in 18 mH, 5.0 A circuits per fig. 12 |
| trr | 430–650 ns - defines minimum dead-time requirement to avoid shoot-through in synchronous bridges |
| RthJC | 1.7 °C/W - permits 74 W power dissipation with heatsink interface ≤0.5 °C/W |
| ID cont. | 5.0 A at TC = 25 °C - sets PCB copper area and thermal pad design baseline for TO-262 mounting |
Pinout & Package
I2PAK (TO-262) package with isolated drain tab, 3-pin through-hole outline, and 13.46 mm × 10.67 mm footprint. Thermal pad on drain connects directly to heatsink; no solder mask required under tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level drive; ±30 V absolute max rating prevents ESD latch-up |
| D (Drain) | High-side switching node | Exposed metal tab tied to drain; requires insulated mounting or heatsink isolation |
| S (Source) | Power return reference | Common connection point for gate driver ground and current-sense resistor |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg/Qgd ratio | 24 nC total / 11 nC Miller charge - reduces switching loss and improves noise immunity during dV/dt transitions |
| Characterized Coss eff. | 39 pF - enables accurate snubber design and soft-switching analysis across 0–400 V VDS range |
| Avalanche-rated construction | 230 mJ EAS and 5.0 A IAR - eliminates need for external clamping in flyback or forward converter primary switches |
| Body diode Qrr spec | 2.0–3.0 μC - allows precise calculation of reverse recovery loss in synchronous rectifier or bidirectional topologies |
| RoHS-compliant lead-free option | IRF830ALPbF marking - meets IPC-J-STD-609A Class 1 definition for Pb-free terminations |
Applications
| Switch Mode Power Supply (SMPS) | Uninterruptible Power Supply (UPS) |
|---|---|
Use Scenario: Primary-side switch in 500 W two-transistor forward converter operating at 100 kHz. IC Role / Device Role / Timing Role: High-voltage N-channel switching element controlling energy transfer from 400 V DC bus to transformer primary. Use Value: 500 V VDS rating and 230 mJ EAS ensure robustness against line surges and transformer leakage spikes without derating. | Use Scenario: Inverter stage H-bridge switch in online double-conversion UPS delivering 1 kVA output. IC Role / Device Role / Timing Role: Half-bridge leg device handling bidirectional 5.0 A load current with body diode commutation. Use Value: 430–650 ns trr and 2.0–3.0 μC Qrr enable precise dead-time control to prevent cross-conduction losses. |
| High-Speed Power Switching | Industrial Motor Drive Stage |
Use Scenario: Solid-state relay replacement in PLC output module switching 240 V AC resistive loads. IC Role / Device Role / Timing Role: Fast-turning N-channel switch replacing electromechanical contacts with µs-level response. Use Value: 10 ns td(on), 21 ns tr, and 21 ns td(off) support ≥500 kHz switching frequency with minimal overlap loss. | Use Scenario: Brake chopper switch in 3 kW servo drive dissipating regenerative energy into dump resistor. IC Role / Device Role / Timing Role: Unidirectional energy clamp activated during motor deceleration events. Use Value: 74 W PD at TC = 25 °C and 1.7 °C/W RthJC allow sustained 5.0 A pulsed braking without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF830ASPbF | D2PAK (TO-263) package; identical electrical specs; 1.7 °C/W RthJC but larger thermal pad area | Better suited for surface-mount automated assembly; requires different PCB land pattern and reflow profile | Select when board space allows SMT placement and thermal management prioritizes lower RthJA via large copper pour |
| SiHF830AL-GE3 | Same I2PAK package; RoHS-compliant (Pb-free/Halogen-free); identical RDS(on), Qg, and EAS values | Required for new designs targeting EU WEEE/RoHS compliance; no performance trade-off vs. IRF830AL | Select for production programs requiring full material declaration and exemption-free compliance documentation |
Compared with IRF830AL, IRF830ASPbF offers identical electrical behavior in a surface-mount D2PAK that simplifies automation but demands revised layout, while SiHF830AL-GE3 delivers drop-in material compliance without altering thermal or switching performance.
Availability
IRF830AL is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and high-speed industrial power switching applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for IRF830AL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics with manufacturing across Asia and Americas.
The IRF830AL belongs to Vishay's high-voltage planar MOSFET product line, engineered for ruggedness in 400–500 V DC bus applications where avalanche capability, dV/dt immunity, and repeatable switching parameters are critical.
FAQ
What is the maximum continuous drain current rating for IRF830AL at case temperature 100 °C?
The IRF830AL supports 3.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 5.0 A rating at TC = 25 °C, using the linear derating factor of 0.59 W/°C and RthJC = 1.7 °C/W. Designers must verify heatsink interface resistance to maintain junction temperature below 150 °C under full load.
Does IRF830AL have a fully characterized body diode for synchronous rectification?
Yes, the IRF830AL includes a fully characterized intrinsic body diode with published parameters: VSD = 1.5 V at IS = 5.0 A and TJ = 25 °C, trr = 430–650 ns, and Qrr = 2.0–3.0 μC. These values are measured under standardized conditions (IF = 5.0 A, dI/dt = 100 A/μs) and appear in the "Drain-Source Body Diode Characteristics" section of the datasheet.
Can IRF830AL be driven directly by a microcontroller GPIO pin?
No, IRF830AL cannot be reliably driven directly by a typical 3.3 V or 5 V microcontroller GPIO. Its gate threshold voltage range is 2.0–4.5 V, but full enhancement requires VGS ≥ 10 V to achieve RDS(on) ≤ 1.40 Ω. Driving with only 5 V results in significantly higher on-resistance and conduction loss. A dedicated gate driver IC or level-shifting circuit is required for proper switching performance.
What is the avalanche energy rating of IRF830AL and how is it tested?
The IRF830AL has a single-pulse avalanche energy rating (EAS) of 230 mJ, tested per Figure 12 with L = 18 mH, IAS = 5.0 A, Rg = 25 Ω, and starting TJ = 25 °C. This rating confirms the device can safely absorb inductive energy during unclamped inductive switching events without failure, making it suitable for flyback and forward converter primary switches.
Is IRF830AL compatible with lead-free soldering processes?
Yes, the IRF830ALPbF variant is qualified for lead-free reflow soldering with peak temperature up to 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings table. The device uses matte tin plating and passes JEDEC J-STD-020D moisture sensitivity level 1 (MSL-1) requirements, supporting standard Pb-free assembly without pre-baking.
IRF830AL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.4Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 620 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
IRF830AL FAQ
1.How can I place an order for IRF830AL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF830AL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF830AL reliable?
The price and inventory of IRF830AL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830AL is usually 5 days.
3.What payment methods are accepted for IRF830AL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830AL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF830AL?
IRF830AL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF830AL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF830AL?
For technical support, including IRF830AL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830AL requirements.
6.How does Aetrix verify that IRF830AL is sourced from the original manufacturer or authorized distributors?
All IRF830AL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830AL meets industry standards.
7.What is the process for return or replacement of IRF830AL?
All IRF830AL units undergo pre-shipment inspection (PSI). If there is an issue with IRF830AL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF830AL part is unused and in its original packaging.
Return procedure for IRF830AL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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