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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF830BPBF

Name: IRF830BPBF
Brand: Vishay Siliconix
SKU: IRF830BPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF830BPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF830BPBF.pdf

Description:: MOSFET N-CH 500V 5.3A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF830BPBF from Vishay Siliconix is a 500 V, 5.3 A N-channel power MOSFET in TO-220AB package, featuring 1.5 Ω R_DS(on) at V_GS = 10 V, 20 nC total gate charge, and 28.8 mJ single-pulse avalanche energy-designed for high-voltage switching in SMPS and motor drives.

For engineers reviewing the IRF830BPBF datasheet, IRF830BPBF pinout, IRF830BPBF application, or IRF830BPBF equivalent, key selection criteria include its 500 V V_DS, 1.5 Ω on-resistance at 10 V drive, TO-220AB thermal performance (R_thJC = 1.2 °C/W), and rugged body diode with 320 ns reverse recovery time.

Technical Context

This N-channel enhancement-mode MOSFET uses planar silicon technology optimized for high-voltage, medium-current switching. It supports unclamped inductive switching with rated UIS capability and exhibits low C_iss (325 pF) and C_oss (34 pF) to minimize capacitive losses during hard-switching transitions.

The device operates with gate threshold voltage between 3 V and 5 V, requires no negative gate drive, and delivers stable R_DS(on) up to 150 °C junction temperature-enabling reliable operation in thermally constrained industrial power stages without complex gate biasing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports primary-side switching in offline 400 V DC bus applications without derating
R_DS(on) max	1.5 Ω at V_GS = 10 V, I_D = 2.5 A - enables <1.9 W conduction loss at 5 A continuous drain current
Q_g max	20 nC - allows efficient 10–20 V gate drive with minimal driver power dissipation
E_AS	28.8 mJ - provides robustness against inductive turn-off transients in motor and welding circuits
R_thJC	1.2 °C/W - permits 104 W power dissipation with ≤125 °C case-to-ambient delta under heatsinked conditions
t_r/t_f	11–22 ns - supports >100 kHz switching in resonant and hard-switched topologies
V_SD	1.2 V at I_S = 4 A - defines forward drop of integral body diode during synchronous rectification or freewheeling

Pinout & Package

IRF830BPBF is housed in a through-hole TO-220AB package with standard three-terminal layout: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and serves as the primary thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 10 V logic-level drive; 1.7 Ω typical gate input resistance minimizes ringing with standard 9.1 Ω series gate resistor
D	Drain connection	High-side switching node; electrically tied to metal tab-requires isolation washer when mounted to grounded heatsink
S	Source reference	Common return for load current and gate drive reference; connects to PCB ground plane for low-inductance source loop

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	30 Ω·nC - reduces combined conduction and switching losses in high-frequency SMPS designs
Avalanche-rated (UIS)	28.8 mJ single-pulse - eliminates need for external snubbers in inductive load switching
Rugged body diode	320 ns t_rr, 1.2 μC Q_rr - supports reliable freewheeling in half-bridge and flyback configurations
High dV/dt immunity	24 V/ns at T_J = 125 °C - suppresses false turn-on in noisy high-dv/dt environments like motor drives

Applications

Server Power Supply	Induction Heating
Use Scenario: Primary-side switch in 80+ Gold-certified 1 kW telecom rectifier operating at 100 kHz. IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET handling 400 V DC bus with 5 A RMS drain current. Use Value: 500 V rating avoids overvoltage stress during line surges; 1.5 Ω R_DS(on) limits conduction loss to <1.9 W at full load.	Use Scenario: Half-bridge switching element in 20 kHz resonant tank for domestic induction cooktops. IC Role / Device Role / Timing Role: Fast-switching power switch controlling resonant current flow into copper coil. Use Value: 22 ns fall time and 28.8 mJ avalanche rating ensure reliable operation during zero-voltage switching transitions and fault events.
Motor Drive Inverter	Battery Charger Output Stage
Use Scenario: Low-side switch in 3-phase 48 V BLDC inverter for industrial pumps. IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current path in inverter leg. Use Value: 1.2 V body diode forward drop reduces freewheeling loss; 150 °C max junction temperature supports sealed enclosure operation.	Use Scenario: Secondary-side synchronous rectifier in 48 V/20 A isolated LLC charger for EVSE systems. IC Role / Device Role / Timing Role: Unidirectional power switch conducting output current during transformer secondary conduction phase. Use Value: TO-220AB package enables direct heatsink mounting; 5.3 A continuous rating sustains 20 A peak output with 25% duty cycle.

Server Power Supply

Induction Heating

Use Scenario: Primary-side switch in 80+ Gold-certified 1 kW telecom rectifier operating at 100 kHz.

IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET handling 400 V DC bus with 5 A RMS drain current.

Use Value: 500 V rating avoids overvoltage stress during line surges; 1.5 Ω R_DS(on) limits conduction loss to <1.9 W at full load.

Use Scenario: Half-bridge switching element in 20 kHz resonant tank for domestic induction cooktops.

IC Role / Device Role / Timing Role: Fast-switching power switch controlling resonant current flow into copper coil.

Use Value: 22 ns fall time and 28.8 mJ avalanche rating ensure reliable operation during zero-voltage switching transitions and fault events.

Motor Drive Inverter

Battery Charger Output Stage

Use Scenario: Low-side switch in 3-phase 48 V BLDC inverter for industrial pumps.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current path in inverter leg.

Use Value: 1.2 V body diode forward drop reduces freewheeling loss; 150 °C max junction temperature supports sealed enclosure operation.

Use Scenario: Secondary-side synchronous rectifier in 48 V/20 A isolated LLC charger for EVSE systems.

IC Role / Device Role / Timing Role: Unidirectional power switch conducting output current during transformer secondary conduction phase.

Use Value: TO-220AB package enables direct heatsink mounting; 5.3 A continuous rating sustains 20 A peak output with 25% duty cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 16 nC, TO-220FP (full-pack)	Lower I_D rating and smaller package footprint; higher thermal resistance (R_thJC = 1.5 °C/W)	Preferred where board space is constrained and peak current ≤4.5 A; requires tighter thermal design due to reduced heatsinking area.
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, Q_g = 75 nC, TO-220AB	Lower voltage rating but vastly higher current capacity and lower on-resistance; incompatible for 400 V bus use	Only suitable for low-voltage (<120 V) high-current applications such as battery-powered inverters-cannot replace IRF830BPBF in high-voltage topologies.

Compared with STP5NK50ZFP and IXTP50N10P, the IRF830BPBF uniquely balances 500 V capability, 5.3 A current handling, and 1.5 Ω on-resistance in a standard TO-220AB package-making it optimal for cost-sensitive, thermally managed 400–500 V switching stages where both voltage margin and conduction efficiency matter.

Availability

IRF830BPBF is available at Aetrix Electronics and suitable for server power supplies, induction heating modules, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF830BPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The D Series power MOSFETs-including IRF830BPBF-are engineered for high-voltage switching efficiency, featuring low R_DS(on) × Q_g figure-of-merit and rugged avalanche performance in cost-effective TO-220 packages.

FAQ

What is the maximum continuous drain current for IRF830BPBF at 100 °C case temperature?

The IRF830BPBF supports 3.4 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions.

Does IRF830BPBF have a fully rated avalanche capability, and how is it specified?

Yes, the IRF830BPBF is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 28.8 mJ, tested under standardized conditions (V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, I_AS = 5 A). This rating is explicitly confirmed in the Vishay datasheet and applies directly to the IRF830BPBF part number.

What is the gate-source threshold voltage range for IRF830BPBF, and how does it affect drive requirements?

The IRF830BPBF has a gate-source threshold voltage (V_GS(th)) range of 3 V to 5 V at I_D = 250 μA. This means reliable turn-on begins near 3 V, but full enhancement requires ≥10 V gate drive to achieve the specified 1.5 Ω R_DS(on). The IRF830BPBF is not a logic-level MOSFET and must be driven with a dedicated 10–15 V gate driver stage.

Can IRF830BPBF be used in synchronous rectification applications?

The IRF830BPBF contains an integral body diode with V_SD = 1.2 V at 4 A and t_rr = 320 ns, but it is not optimized for synchronous rectification due to relatively high forward voltage and recovery charge (Q_rr = 1.2 μC). For high-efficiency SR, purpose-built low-V_F, fast-recovery MOSFETs are preferred-though IRF830BPBF remains viable in non-critical freewheeling roles.

Is IRF830BPBF lead-free and RoHS-compliant?

Yes, IRF830BPBF is lead-free and halogen-free, as indicated by the "-BE3" suffix in its ordering code (IRF830BPbF-BE3). It complies with JEDEC JS709B and Vishay's material categorization standard per document 99912, meeting RoHS Directive 2011/65/EU and China RoHS II requirements.

IRF830BPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 325 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF830BPBF FAQ

1.How can I place an order for IRF830BPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF830BPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF830BPBF reliable?

The price and inventory of IRF830BPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830BPBF is usually 5 days.

3.What payment methods are accepted for IRF830BPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830BPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF830BPBF?

IRF830BPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF830BPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF830BPBF?

For technical support, including IRF830BPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830BPBF requirements.

6.How does Aetrix verify that IRF830BPBF is sourced from the original manufacturer or authorized distributors?

All IRF830BPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830BPBF meets industry standards.

7.What is the process for return or replacement of IRF830BPBF?

All IRF830BPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF830BPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF830BPBF part is unused and in its original packaging.

Return procedure for IRF830BPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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