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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF830BPBF-BE3

Name: IRF830BPBF-BE3
Brand: Vishay Siliconix
SKU: IRF830BPBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF830BPBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF830BPBF-BE3.pdf

Description:: MOSFET N-CH 500V 5.3A TO220AB

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Product details

Overview

IRF830BPBF-BE3 from Vishay Siliconix is a 500 V, 5.3 A N-channel power MOSFET in TO-220AB package, optimized for high-voltage switching in SMPS and industrial motor drives with R_DS(on) = 1.5 Ω @ V_GS = 10 V, Q_g = 20 nC, and E_AS = 28.8 mJ.

For engineers reviewing the IRF830BPBF-BE3 datasheet, IRF830BPBF-BE3 pinout, IRF830BPBF-BE3 application, or IRF830BPBF-BE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for fast switching, thermal resistance (R_thJC = 1.2 °C/W), and Pb-free/halogen-free compliance per JEDEC J-STD-020.

Technical Context

This discrete MOSFET uses planar VDMOS technology with an integrated body diode rated for 5 A continuous and 20 A pulsed source-drain current. Its gate threshold voltage (V_GS(th) = 3–5 V) ensures reliable turn-on with standard 10 V logic-level drive, while dV/dt immunity of 24 V/ns at T_J = 125 °C supports stable operation in noisy high-side configurations.

The device features low C_iss (325 pF) and C_oss (34 pF) to minimize capacitive switching losses, and its figure-of-merit R_DS(on) × Q_g = 30 Ω·nC enables high-efficiency operation in 400 V DC-link applications such as server PSUs and induction heating inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for voltage transients
R_DS(on) max	1.5 Ω @ V_GS = 10 V - limits conduction loss to ≤3.8 W at 5.3 A continuous drain current
Q_g max	20 nC - enables <24 ns turn-off delay with 9.1 Ω gate resistor at 400 V V_DD
E_AS	28.8 mJ - withstands unclamped inductive switching events without failure
T_J range	−55 to +150 °C - qualified for industrial ambient environments up to 100 °C case temperature
R_thJC	1.2 °C/W - allows 104 W dissipation with ≤125 °C junction rise above 25 °C case

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and JEDEC MS-001 compliant outline. Thermal pad requires mechanical clamping and thermal interface material for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; input capacitance C_iss = 325 pF limits gate driver current demand
D (Drain)	High-voltage output terminal	Connected to TO-220 tab; electrically isolated from mounting surface per JEDEC spec
S (Source)	Power return reference	Common node for gate drive return and load current sensing; V_SD = 1.2 V @ I_S = 4 A

Key Features

Feature	Design Value
Avalanche energy rating	28.8 mJ single-pulse - eliminates need for external snubbers in flyback and resonant converters
Low R_DS(on) × Q_g	30 Ω·nC - improves efficiency in hard-switched PFC and LLC topologies operating >50 kHz
Body diode recovery	t_rr = 320 ns, Q_rr = 1.2 μC - reduces cross-conduction loss in synchronous rectification and half-bridge configurations
Pb-free & halogen-free	JEDEC-compliant IRF830BPBF-BE3 marking - meets RoHS 2011/65/EU and IEC 61249-2-21 requirements

Applications

Server Power Supplies	Induction Heating Inverters
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW telecom rectifiers with 400 V DC input. IC Role / Device Role / Timing Role: High-voltage N-channel switch in active clamp forward or LLC resonant converter half-bridge leg. Use Value: 500 V V_DS rating and 28.8 mJ E_AS ensure robustness against line surges and transformer leakage spikes.	Use Scenario: Full-bridge inverter stage driving 20–100 kHz resonant tank in domestic induction cooktops. IC Role / Device Role / Timing Role: Fast-switching power switch with low Q_g enabling <24 ns t_d(off) at 400 V bus. Use Value: 325 pF C_iss and 34 pF C_oss reduce gate drive power and improve ZVS behavior.
Motor Drives (Industrial)	Battery Chargers (EV Onboard)
Use Scenario: Three-phase inverter output stage for 3–7.5 kW AC induction motor control in CNC machinery. IC Role / Device Role / Timing Role: 500 V N-channel MOSFET in IGBT replacement configuration for improved switching speed. Use Value: 1.2 °C/W R_thJC supports 104 W dissipation with heatsink, enabling compact thermal design.	Use Scenario: Isolated DC-DC stage in 6.6 kW OBC converting 400 V battery to 14 V auxiliary supply. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with soft-switching requirements. Use Value: Body diode t_rr = 320 ns and Q_rr = 1.2 μC minimize dead-time losses and EMI generation.

Server Power Supplies

Induction Heating Inverters

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW telecom rectifiers with 400 V DC input.

IC Role / Device Role / Timing Role: High-voltage N-channel switch in active clamp forward or LLC resonant converter half-bridge leg.

Use Value: 500 V V_DS rating and 28.8 mJ E_AS ensure robustness against line surges and transformer leakage spikes.

Use Scenario: Full-bridge inverter stage driving 20–100 kHz resonant tank in domestic induction cooktops.

IC Role / Device Role / Timing Role: Fast-switching power switch with low Q_g enabling <24 ns t_d(off) at 400 V bus.

Use Value: 325 pF C_iss and 34 pF C_oss reduce gate drive power and improve ZVS behavior.

Motor Drives (Industrial)

Battery Chargers (EV Onboard)

Use Scenario: Three-phase inverter output stage for 3–7.5 kW AC induction motor control in CNC machinery.

IC Role / Device Role / Timing Role: 500 V N-channel MOSFET in IGBT replacement configuration for improved switching speed.

Use Value: 1.2 °C/W R_thJC supports 104 W dissipation with heatsink, enabling compact thermal design.

Use Scenario: Isolated DC-DC stage in 6.6 kW OBC converting 400 V battery to 14 V auxiliary supply.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with soft-switching requirements.

Use Value: Body diode t_rr = 320 ns and Q_rr = 1.2 μC minimize dead-time losses and EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 22 nC, TO-220FP package (full-pack)	Lower I_D rating and higher R_thJA (62 °C/W vs. 1.2 °C/W); unsuitable for high-power density designs	Prefer IRF830BPBF-BE3 when case temperature exceeds 85 °C or thermal interface is constrained
FQP5N50C	500 V, 5.3 A, R_DS(on) = 1.4 Ω, Q_g = 25 nC, TO-220 package, no avalanche rating	No UIS qualification; lacks E_AS specification - requires external protection in inductive loads	Select IRF830BPBF-BE3 where unclamped inductive switching (e.g., relay drivers, solenoid controls) is present

Compared with STP5NK50ZFP and FQP5N50C, the IRF830BPBF-BE3 delivers superior thermal performance (R_thJC = 1.2 °C/W), certified avalanche ruggedness (28.8 mJ), and lower gate charge per on-resistance - making it preferred for high-reliability industrial and telecom power stages.

Availability

IRF830BPBF-BE3 is available at Aetrix Electronics and suitable for server power supplies, induction heating inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRF830BPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and automotive-qualified components.

The IRF830B series belongs to Vishay's D Series Power MOSFET family, engineered for high-voltage switching in industrial SMPS, welding equipment, and motor control systems where avalanche capability and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for IRF830BPBF-BE3 at 100 °C case temperature?

The IRF830BPBF-BE3 supports 3.4 A continuous drain current at T_C = 100 °C, derated linearly from 5.3 A at 25 °C using a factor of 0.83 W/°C. This value is confirmed in the Absolute Maximum Ratings table and applies under steady-state thermal conditions with proper heatsinking.

Does IRF830BPBF-BE3 have avalanche energy rating, and what is its value?

Yes, the IRF830BPBF-BE3 is fully rated for single-pulse avalanche energy (E_AS) at 28.8 mJ, tested per standard unclamped inductive switching conditions (V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, I_AS = 5 A). This rating is explicitly specified in the Absolute Maximum Ratings section of the Vishay datasheet S21-1262-Rev. C.

What is the gate-source threshold voltage range for IRF830BPBF-BE3?

The gate-source threshold voltage (V_GS(th)) for IRF830BPBF-BE3 is 3–5 V at V_DS = V_GS and I_D = 250 μA, as specified in the Static Characteristics table. This ensures compatibility with standard 5 V and 10 V gate drivers without requiring level-shifting circuitry.

Is IRF830BPBF-BE3 suitable for use in high-frequency switching applications above 100 kHz?

The IRF830BPBF-BE3 supports high-frequency operation with t_d(on) = 24 ns max, t_r = 22 ns max, and Q_g = 20 nC, enabling efficient switching up to ~250 kHz in hard-switched topologies. However, its C_oss = 34 pF and R_DS(on) = 1.5 Ω make it most effective in 50–150 kHz ranges typical of industrial SMPS and induction heating.

What does the "-BE3" suffix indicate in IRF830BPBF-BE3?

The "-BE3" suffix denotes that IRF830BPBF-BE3 is Vishay's lead (Pb)-free and halogen-free version, compliant with JEDEC J-STD-020 moisture sensitivity level 1 and RoHS Directive 2011/65/EU. It replaces the legacy IRF830BPbF (Pb-free only) with enhanced environmental compliance.

IRF830BPBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 325 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF830BPBF-BE3 FAQ

1.How can I place an order for IRF830BPBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF830BPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF830BPBF-BE3 reliable?

The price and inventory of IRF830BPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830BPBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF830BPBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830BPBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF830BPBF-BE3?

IRF830BPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF830BPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF830BPBF-BE3?

For technical support, including IRF830BPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830BPBF-BE3 requirements.

6.How does Aetrix verify that IRF830BPBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF830BPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830BPBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF830BPBF-BE3?

All IRF830BPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF830BPBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF830BPBF-BE3 part is unused and in its original packaging.

Return procedure for IRF830BPBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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