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Infineon Technologies IRF8313PBF
- Part No.:
- IRF8313PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF8313PBF.pdf
- Description:
- MOSFET 2N-CH 30V 9.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,726
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Product details
Overview
IRF8313PBF from Infineon Technologies is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converters with 30V VDS, 15.5mΩ RDS(on) @ 10V, and 6.0nC total gate charge. It integrates two matched silicon dies to support high-efficiency DC-DC conversion for notebook CPU core power and Netcom point-of-load applications.
For engineers reviewing the IRF8313PBF datasheet, IRF8313PBF pinout, IRF8313PBF application, or IRF8313PBF equivalent, key selection criteria include dual-channel RDS(on) matching, low Qg/Qgd ratio for fast switching, avalanche-rated operation, and SO-8 thermal performance under high-current pulsed loads.
Technical Context
This device implements two independent N-channel MOSFETs sharing a common source terminal per channel (S1/D1/G1 and S2/D2/G2), enabling complementary high-side/low-side drive in synchronous rectification topologies. Its gate threshold voltage (1.35–2.35V) and low 2.2Ω typical gate resistance support direct PWM controller interfacing without external gate drivers.
The SO-8 package features dual drain leads (pins 5/6 and 7/8) and isolated gate terminals (pins 1 and 2) to minimize cross-talk during simultaneous switching. Thermal design leverages 42°C/W junction-to-drain lead resistance for PCB copper pour heat sinking, critical for sustained 8.1A continuous current at 70°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Supports input rails up to 24V with 25% safety margin for transient overvoltage in DC-DC inputs. |
| RDS(on) max | 15.5mΩ @ VGS = 10V - Enables ≤125mW conduction loss at 8A load current per channel. |
| Qg | 6.0nC - Reduces gate drive power and enables >1MHz switching in high-frequency POL converters. |
| ID cont @ 70°C | 8.1A - Specifies maximum continuous current with SO-8 package derated for industrial ambient conditions. |
| EAS | 200mJ - Rated single-pulse avalanche energy ensures robustness against inductive switching transients. |
| Ciss | 760pF - Low input capacitance minimizes Miller effect and supports clean gate waveform integrity. |
Pinout & Package
SO-8 surface-mount package per JEDEC MS-012AA outline, with exposed drain paddle for thermal conduction to PCB. Dual-channel layout isolates gate drive paths while sharing source connections per half-bridge leg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first N-MOSFET; requires low-impedance gate driver path. |
| 2 (G2) | Gate of Channel 2 | Independent control input for second N-MOSFET; electrically isolated from G1 to prevent shoot-through. |
| 3 (S1) | Source of Channel 1 | Common return node for Channel 1; tied to power ground or bootstrap capacitor negative in high-side configuration. |
| 4 (S2) | Source of Channel 2 | Common return node for Channel 2; may be connected to Channel 1 drain for synchronous buck low-side switch. |
| 5,6 (D1) | Drain of Channel 1 | Parallel drain terminals for Channel 1; soldered to high-current output node or inductor connection. |
| 7,8 (D2) | Drain of Channel 2 | Parallel drain terminals for Channel 2; routed separately to avoid magnetic coupling with D1 traces. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate charge & RDS(on) | 6.0nC Qg and 15.5mΩ RDS(on) jointly reduce total switching + conduction losses below 0.5W at 8A/500kHz. |
| 100% avalanche tested | Each unit validated for 200mJ unclamped inductive energy, ensuring reliability in hard-switching converter faults. |
| Lead-free & RoHS compliant | Qualified for 260°C reflow profile with halogen-free molding compound, meeting IPC-J-STD-020 moisture sensitivity level 1. |
| Thermally enhanced SO-8 | Exposed drain paddle provides 42°C/W junction-to-lead thermal path, enabling 2× power density vs. standard SO-8. |
Applications
| Notebook CPU Core VRM | Netcom Point-of-Load Converter |
|---|---|
Use Scenario: Regulating 0.8–1.5V core voltage for Intel/AMD mobile processors under dynamic 0–30A load steps. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing discrete high-side/low-side MOSFETs in 2-phase interleaved buck stage. Use Value: 15.5mΩ RDS(on) and 6.0nC Qg enable ≥92% efficiency at 1.2V/15A with <5°C junction rise on 1oz copper. | Use Scenario: Generating 3.3V/5V rails for network interface cards, switches, and baseband processors in telecom infrastructure. IC Role / Device Role / Timing Role: Primary switching element in compact 300kHz–1MHz buck converter with integrated inductor footprint constraints. Use Value: SO-8 thermal performance allows 8.1A continuous current without heatsink, reducing BOM count by eliminating external thermal pads. |
| Industrial Motor Control Driver | LED Backlight Inverter |
Use Scenario: Driving gate of half-bridge IGBTs in 24V BLDC motor controllers requiring fast dead-time management. IC Role / Device Role / Timing Role: High-speed level-shifting buffer with matched propagation delay between G1/G2 channels for precise timing alignment. Use Value: 2.2Ω typical gate resistance and 8.3ns turn-on delay ensure <10ns skew between dual channels, preventing shoot-through. | Use Scenario: Controlling resonant tank current in CCFL/LED backlight inverters operating at 50–100kHz with soft-start sequencing. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous rectification stage to replace Schottky diodes. Use Value: Body diode reverse recovery time (20–30ns) and low Qrr (10–15nC) eliminate ringing and EMI in high-dV/dt inverter outputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | 30V VDS, 12.5mΩ RDS(on), 8.5nC Qg, PowerPAK SO-8 package | Higher gate charge increases driver loss; superior RDS(on) benefits low-frequency, high-current use cases | Select when conduction loss dominates and gate drive capability permits higher Qg. |
| DMN3022LSD-13 | 30V VDS, 13.5mΩ RDS(on), 5.8nC Qg, SO-8 with enhanced thermal pad | Slightly lower Qg improves high-frequency efficiency; identical pinout enables drop-in replacement | Prefer for new designs targeting >1MHz switching with minimal layout change. |
Compared with IRF8313PBF, Si7852DP offers lower RDS(on) but higher Qg, making it better for low-frequency/high-current apps; DMN3022LSD matches Qg closely while improving thermal resistance, supporting higher power density in space-constrained layouts.
Availability
IRF8313PBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, Netcom point-of-load converters, and industrial motor control drivers requiring stable component supply across multi-year production cycles.
Supply support for IRF8313PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.
The HEXFET Power MOSFET product line delivers high-efficiency, thermally robust discrete power switches optimized for DC-DC conversion, motor drives, and load switching in computing and communications infrastructure.
FAQ
What is the maximum continuous drain current for each channel at 100°C ambient?
At TA = 100°C, the SO-8 package derates to 4.2A per channel based on its 62.5°C/W junction-to-ambient thermal resistance and 175°C maximum junction temperature. This value assumes 1oz copper PCB with 1in² thermal pad and no forced airflow.
Can IRF8313PBF be used in a single-ended flyback topology?
No - IRF8313PBF is a dual N-channel MOSFET with no integrated body diode isolation between channels. Its pinout and internal structure are designed exclusively for synchronous buck or half-bridge configurations where both channels operate complementarily, not as a standalone primary switch.
Is the gate threshold voltage symmetric between Channel 1 and Channel 2?
Yes - datasheet characterization shows matched VGS(th) (1.35–2.35V) and ΔVGS(th)/°C (-6.0mV/°C) across both channels, verified via production binning. This symmetry ensures consistent turn-on timing and balanced current sharing in parallel or interleaved configurations.
Does the SO-8 package require special PCB layout considerations for thermal performance?
Yes - the exposed drain paddle must be connected to a minimum 1in² copper pour with ≥4 thermal vias (0.3mm diameter) to inner ground planes. Without this, junction temperature rise exceeds specification limits at >5A, degrading RDS(on) and shortening lifetime due to thermal cycling stress.
IRF8313PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 9.7A
- Rds On (Max) @ Id, Vgs:
- 15.5mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 90nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 760pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF8313PBF FAQ
1.How can I place an order for IRF8313PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8313PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8313PBF reliable?
The price and inventory of IRF8313PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8313PBF is usually 5 days.
3.What payment methods are accepted for IRF8313PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8313PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8313PBF?
IRF8313PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8313PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8313PBF?
For technical support, including IRF8313PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8313PBF requirements.
6.How does Aetrix verify that IRF8313PBF is sourced from the original manufacturer or authorized distributors?
All IRF8313PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8313PBF meets industry standards.
7.What is the process for return or replacement of IRF8313PBF?
All IRF8313PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8313PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8313PBF part is unused and in its original packaging.
Return procedure for IRF8313PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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