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Infineon Technologies IRF8313TRPBF
- Part No.:
- IRF8313TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF8313TRPBF.pdf
- Description:
- MOSFET 2N-CH 30V 9.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,897
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Product details
Overview
IRF8313TRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converters with 30 V VDS, 15.5 mΩ RDS(on) @ 10 VGS, and 6.0 nC total gate charge. It integrates two independent power switches sharing common source terminals (S1/S2), enabling high-efficiency DC-DC conversion for notebook CPU core power delivery.
For engineers reviewing the IRF8313TRPBF datasheet, IRF8313TRPBF pinout, IRF8313TRPBF application, or IRF8313TRPBF equivalent, key selection criteria include dual-channel RDS(on) matching, gate charge partitioning (Qgs1/Qgd), avalanche energy rating (200 mJ), body diode reverse recovery (Qrr = 10–15 nC), and SO-8 thermal resistance (RθJA = 62.5 °C/W).
Technical Context
This dual MOSFET implements two discrete N-channel silicon die in a single SO-8 leadframe, with separate gate (G1/G2), drain (D1/D2), and shared source (S1/S2) terminals. Its low RDS(on) and gate charge reduce conduction and switching losses simultaneously in high-frequency synchronous rectification.
The device features fully characterized unclamped inductive switching (UIS) capability up to 200 mJ at IAS = 8 A, temperature-stable VGS(th) (1.35–2.35 V), and robust ±20 V gate rating - enabling reliable operation under transient overvoltage and hot-swap conditions in tightly regulated point-of-load supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage compatible with 24 V input rails and transient margin in notebook VRMs. |
| RDS(on) max | 15.5 mΩ @ VGS = 10 V - Enables ≤1.5 W conduction loss at 9.7 A continuous current per channel. |
| Qg | 6.0 nC - Low total gate charge reduces driver power and enables >1 MHz switching in compact DC-DC designs. |
| EAS | 200 mJ - Single-pulse avalanche energy supports robustness against inductive kickback in synchronous buck freewheeling. |
| Qrr | 10–15 nC - Body diode reverse recovery charge directly impacts shoot-through risk and switching loss during dead-time transitions. |
| RθJA | 62.5 °C/W - Thermal resistance defines maximum power dissipation (1.3 W) at 70 °C ambient without heatsink. |
Pinout & Package
IRF8313TRPBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads for enhanced thermal performance. Pin numbering follows standard SO-8 orientation (pin 1 top-left, counterclockwise).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for high-side switch; requires dedicated gate driver with 10 V drive capability. |
| 2 (D1) | Drain of Channel 1 | Connects to input rail (e.g., 12–24 V); shares thermal pad with D2 for parallel heat spreading. |
| 3 (S1) | Source of Channel 1 | Common source node tied to S2; forms output node when used as synchronous rectifier in buck topology. |
| 4 (S2) | Source of Channel 2 | Electrically bonded to S1 internally; provides low-inductance return path for both channels. |
| 5 (D2) | Drain of Channel 2 | Connects to input rail; symmetrical with D1 for balanced current sharing in dual-phase layouts. |
| 6 (G2) | Gate of Channel 2 | Independent control input for low-side switch; timing must be coordinated with G1 to avoid cross-conduction. |
| 7, 8 | Drain Thermal Pads | Exposed copper pads (pins 7 & 8) connect to PCB ground plane for thermal relief and EMI reduction. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate charge asymmetry | Qgs1 = 1.5 nC, Qgd = 2.2 nC - Enables precise dead-time tuning to minimize shoot-through while preserving efficiency. |
| Fully characterized avalanche | EAS = 200 mJ @ IAS = 8 A - Eliminates need for external snubbers in high-di/dt synchronous buck applications. |
| Body diode optimization | Qrr = 10–15 nC, trr = 20–30 ns - Reduces reverse recovery loss and EMI generation during freewheeling phase. |
| Lead-free reflow qualified | Rated for 260 °C peak reflow profile - Ensures solder joint integrity in automated PCB assembly without voiding reliability. |
Applications
| Notebook CPU Core VRM | Netcom Point-of-Load Converter |
|---|---|
Use Scenario: High-current, high-efficiency 1–2 V output supply for Intel/AMD mobile processors requiring <1% voltage regulation and fast load-step response. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing discrete high-side/low-side MOSFETs; operates at 300–1000 kHz with interleaved gate drive. Use Value: 15.5 mΩ RDS(on) and 6.0 nC Qg enable ≥92% efficiency at 15 A output, reducing thermal footprint by 30% vs. discrete solutions. | Use Scenario: Compact 3.3 V/5 V intermediate bus converter powering FPGA I/O banks and SerDes transceivers in telecom line cards. IC Role / Device Role / Timing Role: Primary power switch pair in non-isolated buck stage; driven by integrated controller with adaptive dead-time control. Use Value: Matched RDS(on) and Qg between channels ensures balanced current sharing across dual-phase operation, improving ripple cancellation. |
| Industrial PLC Power Module | Automotive Infotainment DC-DC |
Use Scenario: 5 V/3.3 V auxiliary supply for microcontroller, CAN transceiver, and analog sensors in harsh industrial environments (−40 to +85 °C). IC Role / Device Role / Timing Role: Robust power switch handling repeated cold cranking transients (up to 24 V surge) and load dump events. Use Value: 200 mJ EAS and −55 to +175 °C TJ rating ensure survival during 12 V system overvoltage without derating. | Use Scenario: Secondary 1.2 V/1.8 V core supply for infotainment SoCs in automotive head units with strict EMC and thermal constraints. IC Role / Device Role / Timing Role: High-frequency synchronous rectifier operating at 1.2 MHz to shrink filter inductors and meet CISPR-25 Class 5 radiated emissions limits. Use Value: Low Ciss (760 pF) and Crss (87 pF) minimize capacitive coupling noise into sensitive audio and RF sections. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 12.5 mΩ @ 10 VGS; Qg = 10.5 nC; SO-8 with enhanced thermal pad | Higher gate charge increases driver loss at >500 kHz; better thermal RθJA (50 °C/W) | Select when thermal budget is tighter than switching frequency requirement. |
| IPB80N04S4-02 | Single-channel TO-263; RDS(on) = 2.0 mΩ @ 10 VGS; Qg = 72 nC | Requires two devices and larger PCB area; unsuitable for space-constrained SO-8 footprints | Select only when ultra-low RDS(on) dominates over layout density and cost. |
Compared with Si7852DP-T1-GE3, IRF8313TRPBF trades 1.5 mΩ higher RDS(on) for 4.5 nC lower Qg, favoring high-frequency efficiency; versus IPB80N04S4-02, it delivers 4× smaller footprint and matched dual-channel timing at the cost of 6× higher on-resistance - making it optimal for compact, medium-power VRMs.
Availability
IRF8313TRPBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, Netcom point-of-load converters, and industrial PLC power modules requiring stable component supply and long-term lifecycle support.
Supply support for IRF8313TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with roots in International Rectifier's power MOSFET heritage.
The IRF8313TRPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure.
FAQ
What is the maximum continuous drain current per channel at 70°C ambient?
The IRF8313TRPBF supports 8.1 A continuous drain current per channel at TA = 70°C with 10 VGS, based on its 1.3 W power dissipation limit and 62.5 °C/W junction-to-ambient thermal resistance. This assumes SO-8 PCB mounting with minimum copper pour; actual current depends on board layout and airflow.
Does IRF8313TRPBF integrate a Schottky or body diode?
IRF8313TRPBF uses the intrinsic parasitic body diode formed by the MOSFET's p-n junction - not an external Schottky diode. Its VSD is 1.0 V max at 8 A, with Qrr = 10–15 nC and trr = 20–30 ns, characteristics typical of optimized silicon body diodes in HEXFET technology.
Can IRF8313TRPBF be used in linear regulator mode?
No - IRF8313TRPBF is not rated for linear operation. Its Safe Operating Area (SOA) curve shows operation is limited to pulse widths ≤100 μs at full VDS, and RDS(on) increases significantly above 100°C junction temperature. It is designed exclusively for switched-mode applications like synchronous buck converters.
What is the gate threshold voltage range and its temperature coefficient?
VGS(th) ranges from 1.35 V to 2.35 V at TJ = 25°C, with a temperature coefficient of −6.0 mV/°C. This negative coefficient ensures gate turn-on becomes more difficult as temperature rises - providing inherent thermal runaway protection in properly biased circuits.
IRF8313TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 9.7A
- Rds On (Max) @ Id, Vgs:
- 15.5mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 760pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF8313TRPBF FAQ
1.How can I place an order for IRF8313TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8313TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8313TRPBF reliable?
The price and inventory of IRF8313TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8313TRPBF is usually 5 days.
3.What payment methods are accepted for IRF8313TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8313TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8313TRPBF?
IRF8313TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8313TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8313TRPBF?
For technical support, including IRF8313TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8313TRPBF requirements.
6.How does Aetrix verify that IRF8313TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF8313TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8313TRPBF meets industry standards.
7.What is the process for return or replacement of IRF8313TRPBF?
All IRF8313TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8313TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8313TRPBF part is unused and in its original packaging.
Return procedure for IRF8313TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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