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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF840BPBF

Name: IRF840BPBF
Brand: Vishay Siliconix
SKU: IRF840BPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF840BPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF840BPBF.pdf

Description:: MOSFET N-CH 500V 8.7A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF840BPBF from Vishay Siliconix is a 500 V, 8.7 A N-channel power MOSFET in TO-220AB package, featuring 0.85 Ω R_DS(on) at V_GS = 10 V, 30 nC total gate charge, and 56 mJ single-pulse avalanche energy-designed for high-voltage switching in SMPS and motor drives.

For engineers reviewing the IRF840BPBF datasheet, IRF840BPBF pinout, IRF840BPBF application, or IRF840BPBF equivalent, key selection criteria include its 500 V V_DS, 0.85 Ω on-resistance at 10 V drive, 30 nC Q_g, TO-220AB thermal performance (R_thJC = 0.8 °C/W), and body diode recovery time of 308 ns.

Technical Context

This discrete N-channel MOSFET uses planar VDMOS technology with optimized cell layout to achieve low area-specific R_DS(on) and reduced C_iss (527 pF). Its rugged body diode supports unclamped inductive switching with 56 mJ UIS rating.

Gate threshold voltage ranges from 3 V to 5 V, enabling reliable turn-on with standard 10 V logic-level drive. Dynamic parameters-including 7 nC Q_gd, 13–26 ns turn-on delay, and 11–22 ns fall time-are characterized at V_DS = 400 V, I_D = 4 A, and R_g = 9.1 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports primary-side switching in offline 400 V DC bus applications
R_DS(on) max	0.85 Ω at V_GS = 10 V, I_D = 4 A - enables <1.4 W conduction loss at 4 A
Q_g max	30 nC - determines gate driver current requirement (~1.5 A peak for 20 ns rise)
E_AS	56 mJ - allows safe operation under inductive load turn-off without external snubber
t_rr	308 ns - defines minimum dead-time needed to prevent shoot-through in half-bridge topologies
R_thJC	0.8 °C/W - permits 156 W dissipation with ≤125 °C case-to-junction delta
I_D continuous	8.7 A at T_C = 25 °C - derates linearly to 5.5 A at T_C = 100 °C

Pinout & Package

IRF840BPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 156 W maximum power dissipation at T_C = 25 °C and featuring 0.8 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal; 3–5 V V_GS(th) ensures robust turn-on margin
D (Drain)	High-side power output	Connected to TO-220 tab; electrically isolated but thermally coupled to heatsink
S (Source)	Power return reference	Common node for gate drive return and current sensing; ties to system ground in low-side switch

Key Features

Feature	Design Value
Avalanche-rated ruggedness	56 mJ single-pulse UIS energy enables reliable inductive load switching without snubbers
Low gate charge	30 nC Q_g reduces driver losses and simplifies gate drive design for 100 kHz+ SMPS
Fast body diode recovery	308 ns t_rr minimizes cross-conduction risk in bridge configurations
High dV/dt immunity	24 V/ns drain slope rating prevents false turn-on in noisy high-voltage environments
RoHS-compliant lead-free	IRF840BPBF-BE3 variant meets halogen-free and Pb-free requirements per JEDEC J-STD-609

Applications

Server Power Supply	Induction Heating Inverter
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW server PSUs operating at 100 kHz. IC Role / Device Role / Timing Role: High-voltage N-channel switch in LLC resonant half-bridge, handling 400 V DC bus and 8 A peak current. Use Value: 0.85 Ω R_DS(on) and 30 nC Q_g reduce conduction and switching losses, improving full-load efficiency by ≥0.4% vs. legacy 1 Ω devices.	Use Scenario: Half-bridge leg in 20 kHz resonant inverter driving 10 kW induction coil. IC Role / Device Role / Timing Role: Fast-switching power switch with controlled body diode recovery to minimize dead-time losses. Use Value: 308 ns t_rr and 56 mJ E_AS allow tight dead-time control (≤500 ns) while surviving repetitive inductive flyback stress.
Motor Drive Output Stage	Battery Charger DC-DC Stage
Use Scenario: 3-phase inverter output stage in 5 kW industrial servo drive with regenerative braking. IC Role / Device Role / Timing Role: N-channel high-side/low-side switch managing 300 V DC link and 10 A RMS motor current. Use Value: 500 V V_DS rating accommodates 1.5× bus overvoltage during regeneration; 0.85 Ω R_DS(on) limits thermal rise in sealed enclosures.	Use Scenario: Primary switch in 3.3 kW isolated AC/DC charger for EVs, operating in CCM at 65 kHz. IC Role / Device Role / Timing Role: High-voltage power MOSFET in forward converter primary, switching 400 V DC input. Use Value: 24 V/ns dV/dt immunity prevents spurious turn-on from transformer leakage spikes; TO-220AB package enables direct bolt-down heatsinking.

Server Power Supply

Induction Heating Inverter

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW server PSUs operating at 100 kHz.

IC Role / Device Role / Timing Role: High-voltage N-channel switch in LLC resonant half-bridge, handling 400 V DC bus and 8 A peak current.

Use Value: 0.85 Ω R_DS(on) and 30 nC Q_g reduce conduction and switching losses, improving full-load efficiency by ≥0.4% vs. legacy 1 Ω devices.

Use Scenario: Half-bridge leg in 20 kHz resonant inverter driving 10 kW induction coil.

IC Role / Device Role / Timing Role: Fast-switching power switch with controlled body diode recovery to minimize dead-time losses.

Use Value: 308 ns t_rr and 56 mJ E_AS allow tight dead-time control (≤500 ns) while surviving repetitive inductive flyback stress.

Motor Drive Output Stage

Battery Charger DC-DC Stage

Use Scenario: 3-phase inverter output stage in 5 kW industrial servo drive with regenerative braking.

IC Role / Device Role / Timing Role: N-channel high-side/low-side switch managing 300 V DC link and 10 A RMS motor current.

Use Value: 500 V V_DS rating accommodates 1.5× bus overvoltage during regeneration; 0.85 Ω R_DS(on) limits thermal rise in sealed enclosures.

Use Scenario: Primary switch in 3.3 kW isolated AC/DC charger for EVs, operating in CCM at 65 kHz.

IC Role / Device Role / Timing Role: High-voltage power MOSFET in forward converter primary, switching 400 V DC input.

Use Value: 24 V/ns dV/dt immunity prevents spurious turn-on from transformer leakage spikes; TO-220AB package enables direct bolt-down heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK50ZFP	500 V, 7.5 A, R_DS(on) = 0.95 Ω, Q_g = 25 nC, Zener-protected gate	Lower ID rating and higher R_DS(on); better gate robustness but lower current capability	Prefer when gate ESD protection is critical and 8.7 A rating is not required
FQP50N06L	60 V, 50 A, R_DS(on) = 0.022 Ω, Q_g = 70 nC - incompatible voltage rating	Not suitable for >100 V applications; only valid for low-voltage motor control	Reject for any 400 V bus application; IRF840BPBF remains mandatory for 500 V isolation

Compared with STP8NK50ZFP, IRF840BPBF delivers higher continuous current (8.7 A vs. 7.5 A) and lower on-resistance (0.85 Ω vs. 0.95 Ω), improving conduction efficiency in high-duty-cycle SMPS; compared with FQP50N06L, it is the only viable option for 400–500 V DC applications due to its 500 V rating.

Availability

IRF840BPBF is available at Aetrix Electronics and suitable for server power supplies, induction heating inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRF840BPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability power components for industrial and computing markets.

The IRF840BPBF belongs to Vishay's D Series Power MOSFET family, engineered for high-voltage switching efficiency in offline power conversion, featuring optimized R_DS(on) × Q_g figure-of-merit and rugged avalanche performance.

FAQ

What is the maximum drain-source voltage rating for IRF840BPBF?

The IRF840BPBF has a maximum drain-source voltage (V_DS) rating of 500 V, verified per Vishay's S21-1262-Rev. B datasheet. This rating applies under DC and repetitive pulse conditions at T_J ≤ 150 °C and defines the upper limit for safe blocking operation in high-voltage circuits such as offline SMPS primary switches. Exceeding this voltage risks avalanche breakdown or permanent device failure.

Does IRF840BPBF have avalanche energy rating, and what is its value?

Yes, IRF840BPBF is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 56 mJ, measured per test condition V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, I_AS = 7 A, and starting T_J = 25 °C. This specification confirms its ability to absorb inductive energy without failure during turn-off transients in motor drives and SMPS.

What is the gate threshold voltage range for IRF840BPBF?

The gate-source threshold voltage (V_GS(th)) for IRF840BPBF is specified from 3 V to 5 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while providing sufficient margin against false triggering from noise or leakage currents in high-density PCB layouts.

Is IRF840BPBF RoHS-compliant and halogen-free?

Yes, the IRF840BPBF-BE3 variant is both RoHS-compliant and halogen-free, meeting JEDEC J-STD-609 Class 1a requirements. The "BE3" suffix explicitly denotes lead-free and halogen-free construction. Standard IRF840BPbF is RoHS-compliant but not halogen-free; always verify suffix when ordering for environmental compliance-critical applications.

What thermal resistance does IRF840BPBF exhibit from junction to case?

IRF840BPBF has a maximum junction-to-case (drain) thermal resistance (R_thJC) of 0.8 °C/W, measured with proper mounting to a heatsink using recommended torque and thermal interface material. This low value enables 156 W power dissipation at T_C = 25 °C and supports compact thermal design in space-constrained power modules and industrial inverters.

IRF840BPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 527 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF840BPBF FAQ

1.How can I place an order for IRF840BPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF840BPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF840BPBF reliable?

The price and inventory of IRF840BPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840BPBF is usually 5 days.

3.What payment methods are accepted for IRF840BPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840BPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF840BPBF?

IRF840BPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF840BPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF840BPBF?

For technical support, including IRF840BPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840BPBF requirements.

6.How does Aetrix verify that IRF840BPBF is sourced from the original manufacturer or authorized distributors?

All IRF840BPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840BPBF meets industry standards.

7.What is the process for return or replacement of IRF840BPBF?

All IRF840BPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF840BPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF840BPBF part is unused and in its original packaging.

Return procedure for IRF840BPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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