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Vishay Siliconix IRF840STRL
- Part No.:
- IRF840STRL
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF840STRL.pdf
- Description:
- MOSFET N-CH 500V 8A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,944
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Product details
Overview
IRF840STRL from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 500 V drain-source voltage, 8.0 A continuous drain current at 25 °C, and 0.85 Ω on-resistance at VGS = 10 V. It supports fast switching, repetitive avalanche operation, and high-current DC/AC motor drives and SMPS primary-side switching.
For engineers reviewing the IRF840STRL datasheet, IRF840STRL pinout, IRF840STRL application, or IRF840STRL equivalent, this page delivers verified electrical specs, thermal derating behavior, gate charge profile, body diode recovery characteristics, and real-world mounting guidance for PCB-level thermal management and layout.
Technical Context
This third-generation power MOSFET uses planar V-groove silicon technology optimized for ruggedness and dynamic dV/dt immunity. Its 1.0 °C/W junction-to-case thermal resistance enables high-power dissipation when mounted on heatsinked D2PAK footprints, and its 63 nC total gate charge supports efficient gate drive with standard 10 V logic-level sources.
The device integrates a fast-recovery body diode with 460–970 ns reverse recovery time and 4.2–8.9 μC Qrr, enabling reliable unclamped inductive switching up to 510 mJ single-pulse avalanche energy. Its ±20 V gate-source rating and 2.0–4.0 V threshold voltage ensure stable turn-on control across temperature and supply variation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Supports primary-side switching in offline AC-DC converters up to 400 V DC bus. |
| RDS(on) | 0.85 Ω @ VGS = 10 V - Delivers <1.5 W conduction loss at 4.8 A, enabling compact thermal design. |
| Qg | 63 nC - Requires ~630 µC gate drive charge per full cycle; compatible with standard MOSFET drivers (e.g., IR2110, UCC27531). |
| EAS | 510 mJ - Withstands unclamped inductive energy spikes without failure, critical for relay/snubberless flyback designs. |
| TJ Range | −55 to +150 °C - Rated for industrial ambient environments and sustained operation under thermal stress. |
| RthJC | 1.0 °C/W - Enables direct heatsink attachment via exposed drain pad; allows >100 W dissipation with modest heatsinking. |
| ID (TC = 100 °C) | 5.1 A - Derated current reflects safe continuous operation at elevated case temperatures in enclosed systems. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Drain connects directly to the large copper tab on the bottom side; G and S are gull-wing leads on the front edge.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | High-impedance MOSFET gate requiring low-current drive; sensitive to ESD; must be decoupled near driver output. |
| D | Drain (high-side switch node) | Exposed metal pad - electrically and thermally connected to internal die drain; must be soldered to large copper area or heatsink. |
| S | Source (return path) | Common reference for gate drive and load current return; forms ground reference for source-follower configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 13 mJ per pulse - Enables robust operation in inductive load switching without external snubbers. |
| Dynamic dV/dt rating | 3.5 V/ns - Resists false turn-on during high-speed voltage transients in bridge or half-bridge topologies. |
| Fast switching | td(on) = 14 ns, tr = 23 ns - Reduces switching losses in 50–200 kHz SMPS designs. |
| Low RDS(on) × Qg figure of merit | 53.55 Ω·nC - Balances conduction and switching loss for cost-sensitive high-voltage power stages. |
| RoHS-compliant, Pb-free | IRF840STRLPbF variant - Meets EU RoHS Directive 2011/65/EU and halogen-free requirements (IEC 61249-2-21). |
Applications
| AC-DC Power Supplies | DC Motor Drives |
|---|---|
Use Scenario: Primary-side switch in 100–300 W offline flyback or forward converters. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from rectified AC line to transformer primary. Use Value: 500 V rating accommodates 385 V DC link with margin; 0.85 Ω RDS(on) limits conduction loss below 3.3 W at full load. |
Use Scenario: H-bridge or half-bridge driver for brushed DC motors in industrial actuators and HVAC blowers. IC Role / Device Role / Timing Role: Low-side or high-side switching element handling bidirectional current up to 8 A peak. Use Value: Repetitive avalanche capability absorbs inductive kickback during PWM commutation without clamping diodes. |
| Induction Heating Controls | UPS Inverter Stages |
Use Scenario: Half-bridge switch in resonant tank circuits for 20–50 kHz induction cooktops and heating elements. IC Role / Device Role / Timing Role: Fast-switching power transistor operating in zero-voltage switching (ZVS) mode. Use Value: 63 nC Qg and 23 ns rise time enable efficient ZVS transition; 150 °C TJ rating sustains duty cycling under thermal load. |
Use Scenario: Output stage switch in online double-conversion UPS inverters delivering clean 230 V AC sine wave. IC Role / Device Role / Timing Role: Bridge leg switch modulating DC bus into sinusoidal AC output via SPWM. Use Value: Body diode trr ≤ 970 ns ensures minimal shoot-through risk during dead-time; 5.1 A ID @ 100 °C supports continuous 1 kVA operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK50ZFP | 500 V, 7.5 A, RDS(on) = 0.75 Ω, Qg = 45 nC, TO-220FP package | Lower gate charge improves efficiency at >100 kHz; through-hole mounting requires different PCB layout and thermal vias. | Preferred for higher-frequency SMPS where gate drive loss dominates; not drop-in due to package and pinout mismatch. |
| IXTH8N50L | 500 V, 8 A, RDS(on) = 0.72 Ω, Qg = 52 nC, TO-247 package | Higher PD (190 W) and lower RthJC (0.63 °C/W) support higher continuous power; larger footprint and cost premium. | Selected when >125 W dissipation or forced-air cooling is required; surface-mount compatibility not preserved. |
Compared with STP8NK50ZFP and IXTH8N50L, the IRF840STRL offers optimal balance of D2PAK mountability, 500 V ruggedness, and 8 A current capability for mid-power industrial switching-without requiring through-hole assembly or oversized heatsinks.
Availability
IRF840STRL is available at Aetrix Electronics and suitable for AC-DC power supplies, DC motor drives, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRF840STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRF840STRL belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for rugged switching in offline power conversion and motor control-emphasizing avalanche endurance, dynamic stability, and surface-mount thermal performance.
FAQ
What is the maximum continuous drain current for IRF840STRL at 100 °C case temperature?
The IRF840STRL supports 5.1 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation without exceeding 150 °C junction temperature under typical PCB-mount conditions.
Does IRF840STRL have a built-in body diode, and what are its key recovery parameters?
Yes, the IRF840STRL integrates a monolithic body diode with typical reverse recovery time (trr) of 460–970 ns and reverse recovery charge (Qrr) of 4.2–8.9 μC at TJ = 25 °C, IF = 8.0 A, and dI/dt = 100 A/μs. These values are critical for designing snubberless half-bridge or synchronous rectifier layouts.
Is IRF840STRL pin-compatible with IRF840 or IRF840PBF?
No-IRF840STRL uses the D2PAK (TO-263) surface-mount package, while IRF840 and IRF840PBF use the through-hole TO-220 package. Pin count and physical layout differ entirely; PCB redesign and thermal pad rework are required for substitution. The IRF840STRL is not a drop-in replacement.
What is the gate threshold voltage range for IRF840STRL, and how does it affect drive circuit design?
The IRF840STRL has a gate-source threshold voltage (VGS(th)) range of 2.0–4.0 V at TJ = 25 °C. To ensure full enhancement and low RDS(on), gate drive must exceed 10 V-standard logic-level drivers are insufficient; a dedicated 10–15 V gate driver (e.g., TC4420) is recommended for reliable switching.
Can IRF840STRL be used in avalanche mode, and what is its single-pulse energy rating?
Yes, the IRF840STRL is repetitively avalanche-rated with a single-pulse avalanche energy (EAS) of 510 mJ under test conditions of VDD = 50 V, IAS = 8.0 A, and L = 14 mH. This enables robust operation in inductive switching applications like relay driving or snubberless flyback converters without external protection.
IRF840STRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF840STRL FAQ
1.How can I place an order for IRF840STRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF840STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF840STRL reliable?
The price and inventory of IRF840STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840STRL is usually 5 days.
3.What payment methods are accepted for IRF840STRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840STRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF840STRL?
IRF840STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF840STRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF840STRL?
For technical support, including IRF840STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840STRL requirements.
6.How does Aetrix verify that IRF840STRL is sourced from the original manufacturer or authorized distributors?
All IRF840STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840STRL meets industry standards.
7.What is the process for return or replacement of IRF840STRL?
All IRF840STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF840STRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF840STRL part is unused and in its original packaging.
Return procedure for IRF840STRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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