Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF8513PBF

Name: IRF8513PBF
Brand: Infineon Technologies
SKU: IRF8513PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF8513PBF

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF8513PBF.pdf

Description:: MOSFET 2N-CH 30V 8A/11A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,818

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF8513PBF from Infineon Technologies is a dual N-channel HEXFET Power MOSFET in SO-8 package, configured as a control FET (Q1) and synchronous rectifier FET (Q2) pair for high-frequency synchronous buck converters. It delivers R_DS(on) of 15.5 mΩ (Q1) and 12.7 mΩ (Q2) at V_GS = 10 V, 8.0 A/11 A continuous drain current, and low gate charge (5.7 nC / 7.6 nC), enabling high-efficiency DC-DC conversion in notebook CPU power delivery.

For engineers reviewing the IRF8513PBF datasheet, IRF8513PBF pinout, IRF8513PBF application, or IRF8513PBF equivalent, key selection criteria include dual-FET thermal coupling in SO-8, asymmetric R_DS(on) and Q_g optimization for control/synchronous roles, body diode recovery performance (t_rr = 15–26 ns), and avalanche ruggedness (E_AS = 49–70 mJ).

Technical Context

The IRF8513PBF integrates two discrete N-channel MOSFETs on a single SO-8 die: Q1 serves as the high-side control switch with higher R_DS(on) (15.5 mΩ max) and lower gate charge (5.7 nC typ), while Q2 acts as the low-side synchronous rectifier with lower R_DS(on) (12.7 mΩ max) and higher gate charge (7.6 nC typ). Both share identical 30 V V_DSS, ±20 V V_GS, and -55°C to +175°C T_J rating.

Its design targets high-switching-frequency POL converters where conduction loss (via R_DS(on)) and switching loss (via Q_g, C_iss, and t_r/t_f) must be jointly minimized - evidenced by C_iss = 766 pF (Q1) / 1024 pF (Q2), t_r = 8.5 ns / 10.7 ns, and t_f = 5.7 ns / 5.0 ns under standardized test conditions (V_DD = 15 V, R_G = 1.8 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for both FETs; suitable for 12 V input bus with margin in notebook/server POL stages.
R_DS(on) Q1 / Q2	15.5 mΩ / 12.7 mΩ @ V_GS = 10 V - Asymmetric on-resistance optimizes control vs. synchronous roles to balance conduction loss and thermal distribution.
Q_g Q1 / Q2	5.7 nC / 7.6 nC - Low total gate charge enables fast turn-on with reduced driver power and gate drive loss in MHz-range operation.
I_D Continuous	8.0 A (Q1) / 11 A (Q2) @ T_A = 25°C - Rated current reflects thermal limits of shared SO-8 package; derates to 6.2 A / 9.0 A at 70°C ambient.
E_AS	49 mJ (Q1) / 70 mJ (Q2) - Single-pulse avalanche energy rating confirms ruggedness during unclamped inductive switching in synchronous buck topologies.
t_rr	15–23 ns (Q1) / 17–26 ns (Q2) - Fast reverse recovery time of integrated body diode reduces shoot-through risk and improves light-load efficiency.

Pinout & Package

IRF8513PBF uses an industry-standard SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. The dual-FET layout shares source terminals internally between channels, requiring careful PCB layout to avoid ground bounce coupling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Q1 Source)	Source terminal for control FET (Q1)	Internally tied to pins 5, 6, 7, 8 (Q2 Source); forms common source node essential for synchronous buck low-side return path.
5, 6, 7, 8 (Q2 Source)	Source terminal for synchronous FET (Q2)	Electrically common with Q1 source; requires single-point grounding to minimize noise coupling between high- and low-side switching nodes.
Pin 1 (Q1 Gate)	Gate input for control FET	Drives high-side switch; optimized for lower Q_g to reduce gate driver stress and propagation delay in fast transient response designs.
Pin 5 (Q2 Gate)	Gate input for synchronous FET	Drives low-side switch; higher Q_g accommodates stronger drive needed for high-current conduction with minimal V_SD drop.
Exposed Pad	Drain connection for both FETs	Thermally and electrically connects to both drains; must be soldered to large copper pour for R_θJA = 62.5°C/W (Q2) and thermal stability under 2.4 W P_D.

Key Features

Feature	Design Value
Asymmetric dual-FET optimization	Q1 (control) prioritizes low Q_g and moderate R_DS(on); Q2 (sync) prioritizes ultra-low R_DS(on) and robust avalanche rating - directly reducing total power loss in 500 kHz–1 MHz buck converters.
100% avalanche-tested	Each unit validated for E_AS ≥ 49 mJ (Q1) and ≥ 70 mJ (Q2), ensuring reliable operation during load dump or startup transients without external snubbers.
Lead-free & RoHS-compliant	Qualified to 260°C reflow profile with halogen-free construction, meeting IPC/JEDEC J-STD-020D moisture sensitivity level 1 for zero-bake assembly in high-volume manufacturing.
Low gate resistance	R_G = 2.1 Ω (Q1) / 1.4 Ω (Q2) minimizes gate oscillation and improves EMI behavior during hard switching, especially critical in compact notebook VRMs.

Applications

Notebook CPU VRM

Server DDR Memory Regulator

Use Scenario: Point-of-load regulation for Intel Core i7/i9 or AMD Ryzen mobile processors requiring dynamic 0.7–1.4 V output at up to 60 A.

IC Role / Device Role / Timing Role: Dual-FET power stage where Q1 switches high-side and Q2 replaces Schottky diode in synchronous rectification.

Use Value: Achieves >92% peak efficiency at 1 MHz switching due to combined low R_DS(on) and Q_g, reducing thermal footprint and enabling thinner chassis designs.

Use Scenario: Dedicated 1.2 V DDR4/DDR5 memory rail in 1U rack servers with tight board space and airflow constraints.

IC Role / Device Role / Timing Role: High-density dual-FET switch pair operating in continuous conduction mode (CCM) with phase interleaving.

Use Value: Enables 30% smaller inductor size versus discrete MOSFET solutions due to lower effective AC resistance and tighter thermal coupling in shared SO-8 package.

Graphics Card GPU Power Stage

Game Console SoC Supply

Use Scenario: Multi-phase 0.8–1.1 V GPU core supply in NVIDIA GeForce RTX or AMD Radeon cards handling burst currents >100 A.

IC Role / Device Role / Timing Role: One IRF8513PBF per phase serving as half-bridge switch with gate driver IC (e.g., IR35215).

Use Value: Delivers <1.5°C/W junction-to-board thermal resistance via exposed drain pad, sustaining 85°C case temperature during sustained gaming loads.

Use Scenario: Compact 1.0 V SoC core rail in Sony PlayStation or Microsoft Xbox platforms where board area is constrained by RF modules and cooling stacks.

IC Role / Device Role / Timing Role: Dual-FET in single-phase buck converter driving custom ASIC with aggressive load-step requirements (50 A/µs).

Use Value: Fast t_r/t_f (8.5/5.7 ns Q1) and low C_oss (172 pF) minimize dead-time losses and improve transient response without increasing gate driver complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP	30 V, 12.5 mΩ/10.5 mΩ (Q1/Q2), Q_g = 6.3 nC/8.1 nC, SO-8, same R_θJA but higher C_iss (850/1120 pF)	Higher C_iss increases gate drive loss above 1.2 MHz; better suited for 300–800 kHz server VRMs than notebook MHz designs.	Select when prioritizing lowest R_DS(on) over switching speed; verify gate driver slew rate capability.
DMN6016LFG-7	60 V, 16.5 mΩ/14.5 mΩ (Q1/Q2), Q_g = 9.5 nC/11.2 nC, SOT-23-6 dual package - not pin-compatible, lower current rating (4.5 A/5.5 A)	Designed for low-power IoT and portable devices; insufficient current headroom for CPU/GPU POL applications.	Only viable for sub-10 A auxiliary rails; requires full schematic and layout redesign due to different package and voltage rating.

Compared with SiR872DP and DMN6016LFG-7, the IRF8513PBF offers the best trade-off of low Q_g, tight R_DS(on) asymmetry, and proven avalanche ruggedness specifically validated for high-dI/dt notebook/server buck stages - making it the preferred choice where efficiency, thermal density, and reliability are co-constrained.

Availability

IRF8513PBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, server memory regulators, graphics card GPU power stages, and game console SoC supplies requiring stable component supply across multi-year production cycles.

Supply support for IRF8513PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The IRF8513PBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and consumer electronics where thermal and electrical co-optimization of dual-FET stages is critical.

FAQ

What is the maximum recommended gate drive voltage for IRF8513PBF?

The absolute maximum V_GS rating is ±20 V, but the device is characterized and optimized for 10 V gate drive. Operating above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and ESD vulnerability. Recommended drive range is 4.5 V to 10 V, with 10 V used for datasheet specifications.

Can IRF8513PBF be used in non-synchronous (diode-rectified) buck converters?

Yes, but inefficiently. Its Q2 channel is optimized as a synchronous rectifier - using its body diode in non-synchronous mode results in higher forward voltage (V_SD ≈ 1.0 V) and slower recovery (t_rr = 17–26 ns) than dedicated Schottky diodes. Efficiency loss exceeds 3% at 20 A, making it unsuitable for cost-sensitive non-synchronous designs.

How is thermal management handled given both FETs share one SO-8 package?

The exposed drain pad connects both FETs' drains thermally and electrically. Effective thermal design requires soldering the pad to ≥200 mm² internal or external copper pour with ≥4 thermal vias (0.3 mm diameter) to inner ground plane. This achieves R_θJA ≤ 62.5°C/W for Q2, limiting junction temperature to <125°C at 2.4 W dissipation in still air.

Does IRF8513PBF support paralleling multiple units for higher current?

No - the SO-8 package lacks independent source leads, so paralleling introduces severe current imbalance due to unequal source inductance and thermal coupling. For >11 A applications, use multi-phase controllers with separate dual-FETs per phase or higher-current packages like PowerPAK SO-8. Layout-induced shoot-through risk also increases significantly.

IRF8513PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 8A, 11A

Rds On (Max) @ Id, Vgs:: 15.5mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 8.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 766pF @ 15V

Power - Max:: 1.5W, 2.4W

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF8513PBF FAQ

1.How can I place an order for IRF8513PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8513PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8513PBF reliable?

The price and inventory of IRF8513PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8513PBF is usually 5 days.

3.What payment methods are accepted for IRF8513PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8513PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8513PBF?

IRF8513PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8513PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8513PBF?

For technical support, including IRF8513PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8513PBF requirements.

6.How does Aetrix verify that IRF8513PBF is sourced from the original manufacturer or authorized distributors?

All IRF8513PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8513PBF meets industry standards.

7.What is the process for return or replacement of IRF8513PBF?

All IRF8513PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8513PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8513PBF part is unused and in its original packaging.

Return procedure for IRF8513PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…