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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8707TRPBF-1

Name: IRF8707TRPBF-1
Brand: Infineon Technologies
SKU: IRF8707TRPBF-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8707TRPBF-1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF8707TRPBF-1.pdf

Description:: MOSFET N-CH 30V 11A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF8707TRPBF-1 from Infineon Technologies is an N-channel enhancement-mode HEXFET^® Power MOSFET in SO-8 package, rated for 30 V V_DS, 11 A continuous drain current at 25°C, and 11.9 mΩ R_DS(on) at V_GS = 10 V. It integrates a low-loss body diode and supports high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the IRF8707TRPBF-1 datasheet, IRF8707TRPBF-1 pinout, IRF8707TRPBF-1 application, or IRF8707TRPBF-1 equivalent, key selection criteria include its 6.2 nC total gate charge, 17.5 mΩ R_DS(on) at 4.5 V drive, 12 ns reverse recovery time, and SO-8 footprint compatibility with multi-vendor board designs.

Technical Context

This MOSFET operates as a low-side switching element in buck converters and motor drivers, leveraging its 30 V breakdown voltage and 11.9 mΩ on-resistance to minimize conduction loss at 10 V gate drive. Its 6.2 nC gate charge enables fast switching with moderate gate driver strength.

The device features a thermally robust SO-8 package with R_θJA = 50 °C/W and R_θJL = 20 °C/W, supporting surface-mount assembly and industrial ambient temperatures up to 70°C. Body diode parameters (V_SD ≤ 1.0 V, t_rr = 12–18 ns) are specified for synchronous rectifier operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in low-voltage power rails (e.g., 24 V input systems).
R_DS(on) @ V_GS = 10 V	11.9 mΩ - Conduction loss of ~1.45 W at 11 A, enabling high-efficiency 12–24 V DC-DC stages.
R_DS(on) @ V_GS = 4.5 V	17.5 mΩ - Supports logic-level drive from 3.3 V/5 V microcontrollers without level-shifting.
Q_g	6.2 nC - Enables <100 ns turn-on with 100 Ω gate resistor, suitable for 500 kHz–1 MHz switching.
t_rr	12 ns - Minimizes body diode reverse recovery loss in synchronous buck topologies.
I_D @ T_A = 25°C	11.0 A - Continuous current capability under standard PCB layout with 1 oz copper and 1 in² copper area.
P_D @ T_A = 25°C	3.1 W - Thermal limit defined by SO-8 package's junction-to-ambient resistance (50 °C/W).

Pinout & Package

IRF8707TRPBF-1 uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for thermal and electrical connection. Pin 5 is gate; pins 2–3–4 are source terminals tied internally.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	High-current output node; all seven pins connected to internal drain metallization for low-inductance, high-current routing.
5	Gate (G)	Control input; requires <6.2 nC charge for full enhancement; sensitive to ESD (±20 V max V_GS).
2, 3, 4	Source (S)	Power return path; three dedicated pins reduce source inductance and improve switching stability.

Key Features

Feature	Design Value
SO-8 footprint	Enables drop-in replacement across multiple vendors' 30 V N-channel MOSFETs without PCB redesign.
Low Q_g/R_DS(on) ratio	6.2 nC / 11.9 mΩ = 521 nC·Ω - balances switching loss and conduction loss for high-frequency DC-DC efficiency.
Body diode t_rr = 12 ns	Reduces shoot-through risk and recovery loss in synchronous rectification versus standard diodes (>50 ns).
MSL1 rating	Allows unlimited floor life and reflow without baking, simplifying SMT manufacturing flow.
RoHS & halogen-free	Complies with IPC-J-STD-020D and EU RoHS Directive 2011/65/EU for environmentally regulated end equipment.

Applications

Server VRM

USB-C PD Adapter

Use Scenario: High-density 12 V input → 1.0–3.3 V output buck converter delivering up to 40 A per phase.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 600 kHz with 4.5 V gate drive from controller IC.

Use Value: 17.5 mΩ R_DS(on) at 4.5 V ensures <1.5 W conduction loss at 30 A, reducing thermal load on compact VRM layouts.

Use Scenario: Secondary-side synchronous rectification in 65 W USB-C Power Delivery adapter with 20 V output.

IC Role / Device Role / Timing Role: Output rectifier replacing Schottky diode, driven by dedicated SR controller with adaptive timing.

Use Value: 12 ns t_rr minimizes dead-time loss and improves efficiency by >1.2% over 40 V Schottky alternatives.

Industrial PLC I/O Module

BLDC Motor Gate Driver

Use Scenario: 24 V DC power distribution with electronic fuse and short-circuit protection for digital I/O channels.

IC Role / Device Role / Timing Role: Load switch controlled via microcontroller GPIO, configured for current limiting and thermal shutdown.

Use Value: 30 V V_DS and 11 A rating support 24 V bus with 2× safety margin; SO-8 allows compact dual-channel layout.

Use Scenario: Half-bridge low-side switch in 24 V brushless DC motor driver for HVAC blowers.

IC Role / Device Role / Timing Role: PWM-driven power stage switch with integrated body diode conducting freewheeling current during off-time.

Use Value: 1.0 V V_SD and 12 ns t_rr reduce freewheeling loss and EMI compared to discrete diode solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL11DN3LLH6	30 V, 12 A, R_DS(on) = 10.5 mΩ @ 10 V, Q_g = 7.5 nC, same SO-8 package.	Higher gate charge increases switching loss at >1 MHz; better suited for lower-frequency, higher-current designs.	Prefer when peak current exceeds 11 A and gate drive strength permits higher Q_g.
DMN3025LSD-13	30 V, 10.5 A, R_DS(on) = 12.5 mΩ @ 10 V, Q_g = 5.8 nC, SO-8 with dual-drain configuration.	Slightly lower gate charge improves high-frequency efficiency but marginally higher R_DS(on) raises conduction loss.	Prefer for 1–2 MHz DC-DC where gate drive is limited and thermal margin is tight.

Compared with STL11DN3LLH6 and DMN3025LSD-13, IRF8707TRPBF-1 offers the best balance of R_DS(on) and Q_g for 500 kHz–1 MHz synchronous buck converters, while maintaining SO-8 compatibility and MSL1 manufacturability.

Availability

IRF8707TRPBF-1 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, and industrial PLC I/O modules requiring stable component supply, JEDEC-compliant packaging, and RoHS/halogen-free compliance.

Supply support for IRF8707TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to Infineon's HEXFET^® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in space-constrained consumer, computing, and industrial applications.

FAQ

What is the maximum safe operating temperature for IRF8707TRPBF-1?

The device specifies a junction temperature range of –55°C to +150°C. For continuous operation, maximum case temperature is limited by its SO-8 thermal resistance: at 3.1 W dissipation and 50 °C/W R_θJA, ambient must stay below 70°C with standard PCB layout. Derating applies above 70°C ambient per Figure 9.

Can IRF8707TRPBF-1 be used as a high-side switch?

No - it is an N-channel MOSFET with no integrated level-shifter or bootstrap circuitry. High-side operation requires external gate drive ≥ V_IN + V_GS(th), which this part cannot self-generate. It is designed exclusively for low-side or synchronous rectifier configurations.

Is the body diode suitable for reverse polarity protection?

Yes - the intrinsic body diode has V_SD ≤ 1.0 V at 8.8 A and t_rr = 12–18 ns, making it viable for low-drop reverse polarity protection in 24 V systems. However, forward voltage is higher than ideal Schottky solutions, so power loss must be evaluated at full load.

Does IRF8707TRPBF-1 require a gate resistor for ESD protection?

A series gate resistor (10–100 Ω) is recommended to dampen ringing and limit peak gate current during fast switching, but it does not provide ESD protection. The device has ±20 V absolute maximum V_GS; external TVS or RC snubbers on gate traces are advised for systems exposed to IEC 61000-4-2 events.

IRF8707TRPBF-1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.9mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 9.3 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 760 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

IRF8707TRPBF-1 FAQ

1.How can I place an order for IRF8707TRPBF-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8707TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8707TRPBF-1 reliable?

The price and inventory of IRF8707TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8707TRPBF-1 is usually 5 days.

3.What payment methods are accepted for IRF8707TRPBF-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8707TRPBF-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8707TRPBF-1?

IRF8707TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8707TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8707TRPBF-1?

For technical support, including IRF8707TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8707TRPBF-1 requirements.

6.How does Aetrix verify that IRF8707TRPBF-1 is sourced from the original manufacturer or authorized distributors?

All IRF8707TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8707TRPBF-1 meets industry standards.

7.What is the process for return or replacement of IRF8707TRPBF-1?

All IRF8707TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF8707TRPBF-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8707TRPBF-1 part is unused and in its original packaging.

Return procedure for IRF8707TRPBF-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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