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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8714TRPBF-1

Name: IRF8714TRPBF-1
Brand: Infineon Technologies
SKU: IRF8714TRPBF-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8714TRPBF-1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF8714TRPBF-1.pdf

Description:: MOSFET N-CH 30V 14A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF8714TRPBF-1 from Infineon Technologies is a 30 V, 14 A N-channel HEXFET Power MOSFET in SO-8 package, optimized for high-efficiency synchronous buck converters in notebook CPU power delivery and isolated DC-DC converters in networking infrastructure. It features 7.1 mΩ typical R_DS(on) at V_GS = 10 V, 8.1 nC total gate charge, and 1.6 Ω gate resistance - enabling fast switching with low conduction and drive losses.

For engineers reviewing the IRF8714TRPBF-1 datasheet, IRF8714TRPBF-1 pinout, IRF8714TRPBF-1 application, or IRF8714TRPBF-1 equivalent, key selection criteria include verified R_DS(on) at 10 V and 4.5 V, body diode reverse recovery performance (Q_rr = 15–23 nC), thermal resistance (R_θJA = 50 °C/W), and SO-8 footprint compatibility across multi-vendor designs.

Technical Context

This MOSFET employs planar silicon process technology with integrated body diode, designed for unclamped inductive switching in hard-switched topologies. Its gate threshold voltage (1.35–2.35 V) enables robust 4.5 V logic-level drive, while low Q_gd/Q_g ratio (3.0/8.1 nC) supports high dV/dt immunity and clean turn-off in high-frequency sync-buck stages.

Thermal design is constrained by R_θJA = 50 °C/W (SO-8, no heatsink) and R_θJL = 20 °C/W to drain lead, requiring careful PCB copper area allocation. The device's 65 mJ single-pulse avalanche energy rating (at I_AS = 11 A) provides margin against transient overvoltage in converter primary-side switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12–24 V input DC-DC stages
R_DS(on) @ V_GS = 10 V	7.1 mΩ typ - Enables ≤1 W conduction loss at 14 A continuous drain current
Q_g	8.1 nC typ - Determines gate driver current requirement (~1.6 A peak for 5 ns rise time)
t_d(off)	11 ns typ - Limits minimum off-time in >1 MHz sync-buck controllers
C_iss	1020 pF typ - Impacts gate drive loop stability and EMI filter sizing
Q_rr	15–23 nC - Governs body diode recovery loss and snubber design in high-dI/dt operation
R_θJA	50 °C/W - Requires ≥2 in² 2-oz copper pad for 14 A continuous operation at T_A = 70 °C

Pinout & Package

IRF8714TRPBF-1 uses JEDEC MS-012AA-compliant SO-8 package with exposed drain paddle for thermal enhancement. Pin 1–3 and 5–7 are drain terminals; Pin 4 is gate; Pins 6 and 8 are source. This configuration supports parallel drain connections and low-inductance source return paths.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 7	Drain (D)	High-current output node tied to switch node; multiple pins reduce current density and parasitic inductance
4	Gate (G)	Control input; requires low-impedance drive path to minimize ringing and switching loss
6, 8	Source (S)	Power ground reference for gate drive and current sensing; dual pins lower source inductance

Key Features

Feature	Design Value
SO-8 industry-standard footprint	Enables drop-in replacement across multiple vendors without PCB redesign
R_DS(on) @ V_GS = 4.5 V	10.9 mΩ max - Ensures full enhancement with 5 V microcontroller GPIO or PWM controller outputs
Low Q_gd/Q_g ratio	37% (3.0/8.1 nC) - Reduces Miller-induced shoot-through risk during high dV/dt transitions
MSL1 moisture sensitivity level	Eliminates bake requirements before reflow, supporting standard SMT assembly lines
RoHS-compliant, halogen-free	Meets IPC-1752A environmental compliance for global industrial and computing shipments

Applications

Notebook CPU Core Voltage Regulator

Telecom DC-DC Isolated Converter

Use Scenario: High-density VRM delivering 1–2 V @ up to 100 A to mobile processors using multiphase sync-buck topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switching at 300–1000 kHz with tight dead-time control.

Use Value: 7.1 mΩ R_DS(on) minimizes conduction loss in high-current phase legs; 8.1 nC Q_g enables efficient gate drive at high frequency.

Use Scenario: Secondary-side synchronous rectification in 48 V–12 V isolated flyback or forward converters for enterprise switches.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes to improve efficiency and thermal margin.

Use Value: Body diode Q_rr = 15–23 nC ensures low recovery loss during zero-voltage switching transitions; SO-8 thermal pad aids heat dissipation in confined board areas.

Industrial Motor Drive Half-Bridge

USB-C PD Power Path Switch

Use Scenario: 24 V BLDC motor gate driver stage where compact size and thermal reliability are critical.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration controlling PWM-driven motor windings.

Use Value: 110 A pulsed drain current rating handles motor stall currents; R_θJA = 50 °C/W allows operation without heatsink in ambient ≤70 °C.

Use Scenario: 20 V/5 A power path switch in USB-C PD 3.0 sink applications with overcurrent and thermal protection.

IC Role / Device Role / Timing Role: Load switch managing VBUS connection between port controller and system rail.

Use Value: 1.35–2.35 V V_GS(th) ensures reliable turn-on with 3.3 V logic; 1.6 Ω gate resistance damps oscillation during hot-plug transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 5.8 mΩ @ 10 V; Q_g = 12.5 nC; SO-8 with enhanced thermal pad	Higher conduction efficiency but increased gate drive loss; better thermal performance with 2-layer thermal pad	Preferred when board layout allows larger thermal pad and gate driver can support higher Q_g
IPB80N04S4-02	TO-263 package; R_DS(on) = 2.0 mΩ @ 10 V; Q_g = 54 nC; higher current rating (80 A)	Requires PCB rework for D²PAK footprint; suited for higher-power, lower-frequency applications	Select only when thermal budget exceeds SO-8 capability and space permits larger package

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF8714TRPBF-1 offers optimal balance of low gate charge, proven SO-8 manufacturability, and sufficient R_DS(on) for mid-power sync-buck and isolated DC-DC use - making it ideal for cost-sensitive, high-volume computing and networking designs where layout reuse and assembly yield are prioritized.

Availability

IRF8714TRPBF-1 is available at Aetrix Electronics and suitable for notebook CPU VRMs, telecom isolated DC-DC converters, and industrial motor drive half-bridges requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for IRF8714TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon MOSFET and GaN transistor technologies.

This part belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing, communications, and industrial power systems where low R_DS(on), fast switching, and thermal reliability are essential.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF8714TRPBF-1 supports 11 A continuous drain current at T_A = 70°C with proper PCB copper area (≥2 in² 2-oz copper). This rating assumes SO-8 mounting on FR-4 with no external heatsink and accounts for thermal derating beyond 25°C ambient per the 0.02 W/°C linear derating factor.

Does this MOSFET require a gate resistor for stability?

Yes - a 5–10 Ω series gate resistor is recommended to dampen ringing caused by gate loop inductance and the device's 1.6 Ω intrinsic gate resistance. Layout best practices include minimizing gate trace length and routing gate drive close to the SO-8 pins to avoid oscillation above 100 MHz.

Can IRF8714TRPBF-1 be used with 3.3 V logic-level gate drive?

No - its gate threshold voltage range is 1.35–2.35 V, but full enhancement requires ≥4.5 V to achieve specified R_DS(on). At 3.3 V, R_DS(on) rises significantly (>25 mΩ), increasing conduction loss and thermal stress. Use only with 4.5 V or higher gate drive sources.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes - the body diode has characterized Q_rr = 15–23 nC and t_rr = 14–21 ns at I_F = 11 A, making it viable for synchronous rectification in flyback and forward converters. However, soft-recovery diodes or active clamp circuits are advised if dI/dt exceeds 300 A/μs to limit voltage overshoot.

IRF8714TRPBF-1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.7mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1020 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

IRF8714TRPBF-1 FAQ

1.How can I place an order for IRF8714TRPBF-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8714TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8714TRPBF-1 reliable?

The price and inventory of IRF8714TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8714TRPBF-1 is usually 5 days.

3.What payment methods are accepted for IRF8714TRPBF-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8714TRPBF-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8714TRPBF-1?

IRF8714TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8714TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8714TRPBF-1?

For technical support, including IRF8714TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8714TRPBF-1 requirements.

6.How does Aetrix verify that IRF8714TRPBF-1 is sourced from the original manufacturer or authorized distributors?

All IRF8714TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8714TRPBF-1 meets industry standards.

7.What is the process for return or replacement of IRF8714TRPBF-1?

All IRF8714TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF8714TRPBF-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8714TRPBF-1 part is unused and in its original packaging.

Return procedure for IRF8714TRPBF-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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