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Infineon Technologies IRF8721TRPBF-1
- Part No.:
- IRF8721TRPBF-1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF8721TRPBF-1.pdf
- Description:
- MOSFET N-CH 30V 14A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,992
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Product details
Overview
IRF8721TRPBF-1 from Infineon Technologies is a 30 V, 14 A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-frequency synchronous buck converter topologies in notebook CPU VRMs and isolated DC-DC converters for networking infrastructure. It delivers 6.9 mΩ typical RDS(on) at VGS = 10 V, 8.3 nC total gate charge, and features integrated body diode with 14 ns reverse recovery time.
For engineers reviewing the IRF8721TRPBF-1 datasheet, IRF8721TRPBF-1 pinout, IRF8721TRPBF-1 application, or IRF8721TRPBF-1 equivalent, key selection criteria include its low Qg/RDS(on) ratio for efficient switching loss trade-off, SO-8 footprint compatibility with multi-vendor designs, and validated performance in 1–2 MHz sync-buck stages under 11 A continuous load.
Technical Context
This MOSFET operates as a high-side or low-side switch in voltage-regulator modules where fast turn-on (td(on) = 8.2 ns) and turn-off (td(off) = 8.1 ns) dynamics minimize dead-time losses. Its 1040 pF input capacitance (Ciss) and 114 pF reverse transfer capacitance (Crss) support stable gate drive with standard 1.8 Ω gate resistance.
The device integrates a robust body diode rated for 112 A pulsed source current (ISM) and exhibits 15–23 nC reverse recovery charge (Qrr) at 300 A/μs di/dt-critical for minimizing shoot-through risk during hard commutation in synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in notebook VRMs |
| RDS(on) max @ VGS = 10 V | 8.5 mΩ - Enables ≤1.2 W conduction loss at 14 A DC, critical for thermal management in compact SO-8 layout |
| Qg typical | 8.3 nC - Low gate charge supports efficient 1–2 MHz switching with <1 W gate driver power dissipation |
| ID @ TA = 25°C | 14 A - Continuous drain current rating verified under JEDEC-standard SO-8 thermal conditions |
| tr/tf | 11 ns / 7.0 ns - Fast edge rates reduce overlap conduction loss in sync-buck half-bridges |
| Qrr | 15–23 nC - Quantified reverse recovery charge enabling accurate loss modeling in synchronous rectifier operation |
| RθJA | 50 °C/W - Thermal resistance defines maximum ambient temperature derating for 14 A operation without heatsink |
Pinout & Package
IRF8721TRPBF-1 uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 8 for enhanced thermal conduction. The package supports reflow soldering per MSL1 rating and halogen-free, RoHS-compliant manufacturing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4, 8 | Drain (D) | Parallel-connected high-current output path; electrically tied to exposed copper pad for thermal and electrical sinking |
| 5 | Gate (G) | Control terminal requiring <8.3 nC charge to fully enhance; sensitive to ESD (±20 V absolute max VGS) |
| 6–7 | Source (S) | Return path for drain current; forms cathode of intrinsic body diode used in synchronous rectification |
Key Features
| Feature | Design Value |
|---|---|
| SO-8 industry-standard footprint | Enables drop-in replacement across multiple vendors without PCB redesign or stencil changes |
| RDS(on) × Qg figure-of-merit | 6.9 mΩ × 8.3 nC = 57.3 mΩ·nC - Optimized for high-frequency, high-efficiency sync-buck stages |
| Body diode trr | 14–21 ns - Short reverse recovery time reduces cross-conduction loss during freewheeling transitions |
| MSL1 moisture sensitivity | Eliminates bake requirements prior to reflow, reducing manufacturing cycle time and cost |
| 150 °C maximum junction temperature | Supports operation in thermally constrained environments such as stacked VRM modules or sealed networking enclosures |
Applications
| Server VRM High-Side Switch | Notebook CPU Core Regulator |
|---|---|
Use Scenario: Primary high-side switch in multiphase 12 V input → 1.0 V output VRMs for dual-socket servers. IC Role / Device Role / Timing Role: High-frequency (1–1.5 MHz) power switch controlling energy transfer into coupled inductors; synchronized to PWM controller timing signals. Use Value: 6.9 mΩ RDS(on) minimizes I²R loss at 100+ A per phase, while 8.3 nC Qg ensures clean gate drive with minimal overshoot. |
Use Scenario: Low-side synchronous rectifier in single-phase 19 V adapter → 1.2 V CPU core supply. IC Role / Device Role / Timing Role: Body-diode-assisted freewheeling path during high-side off-time; actively switched during zero-voltage transition windows. Use Value: 14 ns trr and 15 nC Qrr suppress voltage spikes and reduce body-diode conduction loss by >30% vs. legacy MOSFETs. |
| Isolated Telecom DC-DC Primary Switch | Industrial PoE++ Power Sourcing Equipment |
Use Scenario: Primary-side switch in 48 V input → 12 V isolated flyback or active-clamp forward converter for telecom line cards. IC Role / Device Role / Timing Role: Hard-switched power transistor operating at 300–500 kHz; subjected to repetitive unclamped inductive switching stress. Use Value: 250 mJ single-pulse avalanche energy (EAS) withstands leakage inductance spikes without failure during startup or overload. |
Use Scenario: 90 W power switch in IEEE 802.3bt Type 4 PSE circuit delivering up to 71.3 W over Category 6A cabling. IC Role / Device Role / Timing Role: Current-limiting pass element during PD classification and fault detection; handles 1.3 A continuous current with thermal headroom. Use Value: 14 A ID rating and 50 °C/W RθJA ensure reliable operation at 60 °C ambient with no forced airflow. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF8720TRPBF | Higher RDS(on) (9.5 mΩ max @ 10 V) and higher Qg (9.5 nC); otherwise identical SO-8 footprint and voltage rating | Suitable for lower-frequency (<500 kHz) or lower-current (<10 A) sync-buck designs where thermal margin is less constrained | Select when cost sensitivity outweighs efficiency targets and board space allows minor derating |
| SiR872DP-T1-GE3 | Lower RDS(on) (5.8 mΩ typ), higher Qg (12.5 nC), same VDS and SO-8 package; Vishay's TrenchFET Gen IV process | Better conduction loss but higher switching loss; requires stronger gate driver due to +25% Qg | Prefer for thermally limited applications where conduction dominates, e.g., high-ambient industrial DC-DC |
Compared with IRF8720TRPBF and SiR872DP-T1-GE3, IRF8721TRPBF-1 strikes a balanced trade-off between gate drive strength and conduction efficiency-ideal for 1–2 MHz notebook VRMs where both Qg and RDS(on) directly impact total power loss and thermal design.
Availability
IRF8721TRPBF-1 is available at Aetrix Electronics and suitable for notebook CPU voltage regulation, telecom isolated DC-DC converters, and IEEE 802.3bt Power over Ethernet systems requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF8721TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, communications, and industrial power supplies.
FAQ
What is the maximum safe operating frequency for IRF8721TRPBF-1 in a synchronous buck converter?
IRF8721TRPBF-1 is characterized for reliable operation up to 2 MHz in sync-buck topologies, supported by its 8.3 nC Qg, 11 ns rise time, and 7.0 ns fall time. At 2 MHz, gate drive power remains below 1 W with a 1.8 Ω series resistor and 12 V drive, provided PCB layout minimizes parasitic inductance in the gate loop.
Does IRF8721TRPBF-1 require a gate resistor, and what value is recommended?
Yes-a gate resistor is required to dampen ringing and control dV/dt. A 1.8 Ω resistor matches the device's typical gate resistance (RG = 1.8–3.0 Ω) and is validated in Infineon's reference designs for 1–2 MHz operation. Values below 1.0 Ω increase EMI risk; above 4.7 Ω degrade switching speed and increase losses.
Can IRF8721TRPBF-1 be used in linear mode (as a pass transistor)?
No-it is not rated or characterized for linear (ohmic) operation. Its Safe Operating Area (SOA) curve limits continuous DC operation to ≤14 A only at VDS < 2 V; beyond that, thermal runaway occurs rapidly due to positive RDS(on) temperature coefficient and limited SOA area at higher VDS.
How does the body diode performance compare to discrete Schottky alternatives?
The integrated body diode has VSD = 1.0 V and trr = 14–21 ns-higher forward drop than 0.4–0.6 V Schottky diodes but eliminates component count and layout complexity. In sync-buck applications, its Qrr (15–23 nC) is lower than many 30 V Schottkys, reducing recovery-related losses during forced commutation.
IRF8721TRPBF-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1040 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
IRF8721TRPBF-1 FAQ
1.How can I place an order for IRF8721TRPBF-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8721TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8721TRPBF-1 reliable?
The price and inventory of IRF8721TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8721TRPBF-1 is usually 5 days.
3.What payment methods are accepted for IRF8721TRPBF-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8721TRPBF-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8721TRPBF-1?
IRF8721TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8721TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8721TRPBF-1?
For technical support, including IRF8721TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8721TRPBF-1 requirements.
6.How does Aetrix verify that IRF8721TRPBF-1 is sourced from the original manufacturer or authorized distributors?
All IRF8721TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8721TRPBF-1 meets industry standards.
7.What is the process for return or replacement of IRF8721TRPBF-1?
All IRF8721TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF8721TRPBF-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8721TRPBF-1 part is unused and in its original packaging.
Return procedure for IRF8721TRPBF-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF8721TRPBF-1 Tags
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