Infineon Technologies IRF8852TRPBF

Overview

IRF8852TRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel TSSOP-8 packaged HEXFET power MOSFET designed for high-efficiency load switching in space-constrained portable electronics. It delivers 7.8 A continuous drain current at V_GS = 10 V, ultra-low R_DS(on) of 11.3 mΩ (max), and operates up to 25 V V_DS, enabling compact battery protection and USB power delivery circuits.

For engineers reviewing the IRF8852TRPBF datasheet, IRF8852TRPBF pinout, IRF8852TRPBF application, or IRF8852TRPBF equivalent, key selection criteria include its dual-N-channel configuration, TSSOP-8 thermal performance (R_θJA = 125 °C/W), low-profile height (<1.1 mm), and verified avalanche energy rating (E_AS = 25 mJ).

Technical Context

This device integrates two independent N-channel enhancement-mode MOSFETs in a single TSSOP-8 package with shared source terminals (pins 1–4 and 5–8 configured as two 4-pin half-bridges). Its gate threshold voltage (V_GS(th)) ranges from 1.35 V to 2.35 V, supporting direct logic-level drive from 3.3 V and 5 V controllers.

The MOSFET exhibits strong dynamic performance: total gate charge Q_g = 9.5 nC (V_DS = 13 V), rise time t_r = 10.9 ns, and reverse transfer capacitance C_rss = 134 pF - enabling fast, low-loss switching in DC-DC converters and hot-swap controllers.

Key Specifications

Pinout & Package

TSSOP-8 package: 3.0 mm × 4.4 mm footprint, 1.1 mm maximum height, exposed drain pad on bottom for thermal relief. Pin pitch: 0.65 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel load switching applications.

Compared with Si7157DP-T1-GE3 and DMN3025LSD-13, IRF8852TRPBF uniquely balances ultra-low profile, dual independent gate control, and verified avalanche ruggedness - making it optimal for space-limited, fault-resilient portable power architectures where board thickness and reliability are co-constrained.

Availability

IRF8852TRPBF is available at Aetrix Electronics and suitable for USB-C power delivery modules, battery protection circuits, hot-swap controllers, and portable SSD power management requiring stable component supply across production lifecycles.

Supply support for IRF8852TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensing, and connectivity solutions, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.

The HEXFET® product line was engineered specifically for high-efficiency, high-reliability power switching in portable, automotive, and industrial systems - emphasizing low R_DS(on), fast switching, and rugged transient handling.

FAQ

What is the maximum junction temperature rating for IRF8852TRPBF?

The absolute maximum operating junction temperature (T_J) is +150°C, with storage temperature range from –55°C to +150°C. Derating begins at T_A = 70°C, where continuous drain current drops to 6.2 A at V_GS = 10 V. Thermal design must account for R_θJA = 125 °C/W and the exposed drain pad's role in heat conduction.

Does IRF8852TRPBF support 3.3 V logic-level gate drive?

Yes - its gate threshold voltage (V_GS(th)) is specified from 1.35 V to 2.35 V, and R_DS(on) remains 15.4 mΩ max at V_GS = 4.5 V with I_D = 6.2 A. At 3.3 V, it delivers usable conduction (≈22 mΩ typical), but full-rated current requires ≥4.5 V drive for robust margin.

How is the TSSOP-8 package thermally enhanced compared to standard SO-8?

The TSSOP-8 uses an exposed drain pad on the underside that serves as the primary thermal path to the PCB. Unlike SO-8, which relies on leads for conduction, this pad enables direct copper thermal vias beneath the package - reducing effective R_θJA by up to 30% with proper layout, critical for maintaining T_J < 125°C in sealed enclosures.

Can IRF8852TRPBF be used in synchronous rectification topologies?

Yes - its body diode exhibits t_rr = 32–48 ns and Q_rr = 17–26 nC, enabling clean commutation in 500 kHz–1 MHz flyback and buck-derived converters. However, independent gate control per channel is required to actively drive both MOSFETs; the device does not integrate gate timing logic.