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Infineon Technologies IRF8910GPBF
- Part No.:
- IRF8910GPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF8910GPBF.pdf
- Description:
- MOSFET 2N-CH 20V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,087
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Product details
Overview
IRF8910GPBF from Infineon Technologies is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, configured as two independent 20V/10A switches with RDS(on) = 13.4 mΩ @ VGS = 10V, ultra-low gate impedance, and fully characterized avalanche capability. It serves as synchronous rectifier and control FET pair in point-of-load (POL) converters for desktops, servers, and graphics cards.
For engineers reviewing the IRF8910GPBF datasheet, IRF8910GPBF pinout, IRF8910GPBF application, or IRF8910GPBF equivalent, key selection criteria include its dual SO-8 layout, 4.5V gate drive compatibility, 10A continuous drain current at 25°C, body diode reverse recovery charge (Qrr = 6.5–9.7 nC), and clamped inductive avalanche energy rating (EAS = 80 mJ).
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices sharing a common SO-8 thermal pad, enabling compact high-efficiency synchronous buck stages without external isolation. Its gate threshold voltage (VGS(th) = 1.65–2.55 V) and negative temperature coefficient (−4.8 mV/°C) support stable turn-on across −55°C to +150°C junction range.
Designed for fast switching in DC/DC converters, it delivers low Qgd/Qgs1 ratio to suppress Cdv/dt turn-on risk, features 2.5 nC gate-to-drain charge, 3.3 nC switch charge (Qsw), and 4.4 nC output charge - all critical for minimizing shoot-through and crossover losses at 500 kHz–1 MHz operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage compatible with 12V input rails and transient margin in POL converters |
| RDS(on) max | 13.4 mΩ @ VGS = 10V - Enables ≤134 mW conduction loss at 10A, critical for thermal management in dense server VRMs |
| ID cont @ 25°C | 10 A - Supports high-current single-phase POL stages without parallel devices |
| Qg total | 7.4–11 nC - Determines gate driver strength requirement; enables efficient 1–2 A peak drive at 1 MHz |
| Qrr | 6.5–9.7 nC - Quantifies body diode reverse recovery loss transferred to control FET during dead-time |
| EAS | 80 mJ - Specifies single-pulse avalanche robustness under unclamped inductive switching faults |
| Thermal RθJA | 62.5 °C/W - Defines maximum power dissipation (1.3 W) before exceeding 150°C junction limit on standard FR4 |
Pinout & Package
IRF8910GPBF uses an SO-8 surface-mount package with exposed thermal pad (lead-free/halogen-free). Pin numbering follows JEDEC MS-012, top-view orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | Main current path for first MOSFET; connected to high-side switch node in synchronous buck |
| 2 (D1) | Drain of Channel 1 | Parallel drain terminal for enhanced current handling and thermal spreading |
| 3 (G1) | Gate of Channel 1 | Control input for first MOSFET; requires <2.55 V threshold and <11 nC total charge |
| 4 (S2) | Source of Channel 2 | Return path for second MOSFET; tied to power ground or low-side source node |
| 5 (G2) | Gate of Channel 2 | Independent gate for synchronous rectifier; susceptible to Cdv/dt turn-on without proper layout |
| 6 (S1) | Source of Channel 1 | Reference node for Channel 1; often connected to input capacitor ground or bootstrap return |
| 7 (D2) | Drain of Channel 2 | Output-side drain; connects to converter output inlay or inductor node |
| 8 (D2) | Drain of Channel 2 | Parallel drain terminal for Channel 2, improving RDS(on) and thermal performance |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5V VGS | Enables direct drive from 5V PWM controllers without level-shifting, reducing BOM count in cost-sensitive POL designs |
| Fully characterized avalanche voltage/current | Guarantees safe operation under unclamped inductive fault conditions up to 80 mJ, eliminating need for external snubbers |
| Dual SO-8 configuration | Reduces PCB area by 40% vs. discrete dual-MOSFET solutions while maintaining thermal separation between channels |
| Lead-free and halogen-free | Meets IPC-J-STD-609 Class 1 and RoHS 2011/65/EU requirements for industrial and computing applications |
Applications
| Server Voltage Regulator Modules | Graphics Card POL Converters |
|---|---|
Use Scenario: High-current 12V-to-0.8V conversion delivering >300A per GPU rail in PCIe-based accelerators. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier and control FET pair operating at 600 kHz with interleaved phase control. Use Value: 13.4 mΩ RDS(on) minimizes conduction loss at full load; matched channel parameters ensure balanced current sharing and thermal stress. | Use Scenario: Compact 5V-to-1.2V step-down for memory interface power on gaming GPUs with strict size constraints. IC Role / Device Role / Timing Role: Integrated high-side/low-side switch in monolithic buck controller reference design. Use Value: Ultra-low gate impedance reduces driver losses; SO-8 thermal pad enables 1.3W dissipation without heatsink in 10 mm² footprint. |
| Desktop Motherboard VRMs | Set-Top Box Power Supplies |
Use Scenario: Multi-phase CPU core voltage regulation requiring tight VOUT tolerance and rapid transient response. IC Role / Device Role / Timing Role: Control FET (Channel 1) and synchronous rectifier (Channel 2) in each phase leg. Use Value: 2.55 V max VGS(th) ensures reliable turn-on with ±5% gate drive tolerance; Qrr <10 nC limits cross-conduction loss during light-load discontinuous mode. | Use Scenario: Low-cost 12V-to-3.3V/5V conversion powering SoC, tuner, and HDMI interface in consumer STBs. IC Role / Device Role / Timing Role: Single-chip dual-FET solution replacing two discrete 20V MOSFETs in non-isolated buck stage. Use Value: Lead-free/halogen-free compliance meets global CE marking requirements; 20V VDS provides 2× safety margin over 12V input. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 12.5 mΩ @ 10V but higher Qg (14.5 nC); no avalanche rating specified | Lacks EAS characterization; unsuitable for unclamped inductive fault environments | Prefer where gate drive capability exceeds 2A and avalanche immunity is not required |
| DMN3020LSD-13 | 30V VDS, RDS(on) = 20 mΩ @ 10V, lower Qrr (4.2 nC), SO-8 dual-N with logic-level gate | Better reverse recovery but higher conduction loss; rated for 30V systems only | Select when 30V input compatibility and lower Qrr outweigh RDS(on) penalty in 12V–24V designs |
Compared with Si7852DP-T1-GE3 and DMN3020LSD-13, IRF8910GPBF uniquely balances 20V rating, 13.4 mΩ conduction resistance, and guaranteed 80 mJ avalanche energy - making it optimal for space-constrained, fault-resilient POL converters where both efficiency and ruggedness are mandatory.
Availability
IRF8910GPBF is available at Aetrix Electronics and suitable for server voltage regulator modules, graphics card POL converters, and desktop motherboard VRMs requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF8910GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The IRF8910GPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in computing and communications infrastructure where thermal density and reliability are critical.
FAQ
What is the maximum continuous drain current for IRF8910GPBF at 70°C ambient?
The maximum continuous drain current for IRF8910GPBF is 8.3 A at TA = 70°C with 1 in² FR4 board and 2 oz copper, based on its 62.5 °C/W junction-to-ambient thermal resistance and 150°C maximum junction temperature. This derating ensures safe operation without forced airflow or heatsinking in typical server VRM layouts.
Does IRF8910GPBF support 4.5V gate drive in synchronous rectifier mode?
Yes - IRF8910GPBF is fully specified down to 4.5V VGS, with RDS(on) = 14.6 mΩ (max) at that voltage. Its low gate threshold (1.65–2.55 V) and ultra-low gate impedance enable robust turn-on using standard 5V PWM controller outputs, eliminating need for gate drivers in many POL applications.
How is avalanche energy measured for IRF8910GPBF, and what test conditions apply?
IRF8910GPBF's single-pulse avalanche energy (EAS = 80 mJ) is measured under unclamped inductive switching (UIS) conditions: VDD = 10 V, IAS = 8.2 A, L = 0.1 mH, RG = 25 Ω, TJ = 25°C. The device is stressed until VDS reaches breakdown, and energy is integrated over the pulse duration - confirming ruggedness for transient overcurrent events.
Can IRF8910GPBF be used in place of two discrete SO-8 MOSFETs in a synchronous buck design?
Yes - IRF8910GPBF replaces two discrete N-channel MOSFETs in one SO-8 package with shared thermal pad. Its pinout (D1/D1/G1/S2/G2/S1/D2/D2) supports standard high-side/low-side routing; however, layout must isolate gate traces from switching-node dv/dt coupling to prevent unintended turn-on of the synchronous rectifier channel.
IRF8910GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 10A
- Rds On (Max) @ Id, Vgs:
- 13.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 960pF @ 10V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF8910GPBF FAQ
1.How can I place an order for IRF8910GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8910GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8910GPBF reliable?
The price and inventory of IRF8910GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8910GPBF is usually 5 days.
3.What payment methods are accepted for IRF8910GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8910GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8910GPBF?
IRF8910GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8910GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8910GPBF?
For technical support, including IRF8910GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8910GPBF requirements.
6.How does Aetrix verify that IRF8910GPBF is sourced from the original manufacturer or authorized distributors?
All IRF8910GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8910GPBF meets industry standards.
7.What is the process for return or replacement of IRF8910GPBF?
All IRF8910GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8910GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8910GPBF part is unused and in its original packaging.
Return procedure for IRF8910GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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