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Infineon Technologies IRF8910PBF
- Part No.:
- IRF8910PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF8910PBF.pdf
- Description:
- MOSFET 2N-CH 20V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,775
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Product details
Overview
IRF8910PBF from Infineon Technologies is a dual N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, configured as two independent 20V/10A switches with 13.4 mΩ RDS(on) at VGS = 10 V and ultra-low gate impedance. It is designed for synchronous buck POL converters in high-density computing power stages.
For engineers reviewing the IRF8910PBF datasheet, IRF8910PBF pinout, IRF8910PBF application, or IRF8910PBF equivalent, key selection criteria include its dual-SO8 layout, 4.5V gate drive compatibility, fully characterized avalanche rating (EAS = 70 mJ), body diode reverse recovery charge (Qrr = 6.5–9.7 nC), and thermal resistance RθJA = 62.5 °C/W.
Technical Context
This dual MOSFET integrates two matched N-channel devices sharing a common drain lead configuration (D1/D2 on pins 1 & 2, S1/S2 on pins 4 & 7, G1/G2 on pins 3 & 6). Each channel supports 10 A continuous drain current at TA = 25°C and operates with VGS ratings up to ±20 V.
Its low 10.7 mΩ typical RDS(on) at 10 V gate drive and 14.6 mΩ max at 125°C enables high-efficiency operation in 5 V and 3.3 V input POL stages. The device features fully specified unclamped inductive switching behavior and linear derating of 16 mW/°C above 70°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage compatible with 5 V and 3.3 V input rails in non-isolated DC/DC converters |
| RDS(on) max | 13.4 mΩ @ VGS = 10 V - Enables <1 W conduction loss per FET at 10 A DC load in compact POL designs |
| ID continuous | 10 A @ TA = 25°C - Supports high-current CPU/GPU core rail delivery without external heatsinking |
| Qg total | 7.4–11 nC - Low gate charge reduces driver power loss and enables fast 6.2 ns turn-on delay |
| Qrr | 6.5–9.7 nC - Quantified reverse recovery charge critical for minimizing shoot-through risk in synchronous rectification |
| RθJA | 62.5 °C/W - Thermal performance validated for SO-8 footprint on 1 oz copper PCBs with standard pad layout |
Pinout & Package
IRF8910PBF uses a standard SO-8 surface-mount package with exposed drain pads (pins 1, 2, 5, 8) for enhanced thermal conduction. Pin numbering follows JEDEC MS-012AA outline with top-view labeling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain 1 | High-side switch drain node; electrically tied to pin 5 (D1 internal connection) |
| 2 (D2) | Drain 2 | Low-side switch drain node; electrically tied to pin 8 (D2 internal connection) |
| 3 (G1) | Gate 1 | Control terminal for high-side MOSFET; isolated from G2 for independent PWM control |
| 4 (S1) | Source 1 | Return path for high-side channel; referenced to input rail |
| 5 (D1) | Drain 1 (redundant) | Second drain connection for D1; improves current sharing and thermal spreading |
| 6 (G2) | Gate 2 | Control terminal for low-side MOSFET; separate from G1 to prevent cross-talk |
| 7 (S2) | Source 2 | Return path for low-side channel; connected to output ground |
| 8 (D2) | Drain 2 (redundant) | Second drain connection for D2; enhances thermal dissipation and current capacity |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | 18.3 mΩ max - Enables direct drive from 5 V PWM controllers without level-shifting |
| Fully characterized avalanche | EAS = 70 mJ @ IAS = 8.2 A - Guarantees ruggedness under unclamped inductive switching in POL applications |
| Low Qgd/Qgs1 ratio | Qgd = 2.5 nC, Qgs1 = 2.4 nC - Minimizes Cdv/dt induced turn-on risk in high-dV/dt synchronous nodes |
| Body diode trr | 17–26 ns - Fast reverse recovery reduces dead-time losses and improves light-load efficiency |
Applications
| Desktop CPU Core Rail | Server Memory Regulator |
|---|---|
Use Scenario: High-current, fast-transient 1.0–1.3 V supply for multi-core x86 processors requiring >100 A peak current. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier where IRF8910PBF serves as both high-side and low-side switch in a single-phase buck converter. Use Value: 13.4 mΩ RDS(on) and 6.5 nC Qrr reduce conduction and switching losses, enabling >92% efficiency at 50 A load. | Use Scenario: Compact 1.2 V DDR4/DDR5 memory termination regulator on dense server DIMM modules. IC Role / Device Role / Timing Role: Low-side synchronous FET in multiphase VRMs, leveraging matched channel characteristics for current balancing. Use Value: Dual SO-8 integration eliminates discrete placement mismatch, improving phase current sharing accuracy by ≤3%. |
| Graphics Card GPU Power Stage | Game Console SoC PMIC |
Use Scenario: Dynamic voltage scaling for GPU cores operating between 0.8–1.2 V with 200+ A transient demand. IC Role / Device Role / Timing Role: High-side control FET in interleaved 3-phase buck topology, driven by dedicated gate drivers. Use Value: 42 °C/W RθJL allows direct thermal coupling to PCB copper, sustaining 10 A/channel without thermal throttling. | Use Scenario: Integrated power management for ARM-based game console APUs with strict EMI and space constraints. IC Role / Device Role / Timing Role: Dual-channel POL switch in embedded PMIC subsystem, replacing two discrete SO-8 MOSFETs. Use Value: Lead-free SO-8 package meets RoHS/REACH requirements while maintaining 20 V VDS margin over 12 V input rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | RDS(on) = 12.5 mΩ @ 10 V; Qg = 12.5 nC; SO-8 with thermally enhanced pad | Higher gate charge increases driver loss; better thermal RθJA = 50 °C/W | Preferred when board-level thermal management prioritizes junction-to-ambient cooling over gate drive efficiency |
| DMN6016LFG-7 | RDS(on) = 16 mΩ @ 10 V; Qrr = 12 nC; dual N-channel in SOT-23-6 | Lower current rating (6 A); higher Qrr increases shoot-through risk in high-frequency POL | Suitable only for <5 A, low-cost consumer applications where space is more constrained than efficiency |
Compared with Si7850DP-T1-GE3 and DMN6016LFG-7, IRF8910PBF offers the lowest Qrr/RDS(on) trade-off for 10 A-class POL stages, with verified avalanche robustness essential for server-grade reliability.
Availability
IRF8910PBF is available at Aetrix Electronics and suitable for desktop CPU core rails, server memory regulators, and graphics card GPU power stages requiring stable component supply across extended production lifecycles.
Supply support for IRF8910PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards aligned to AEC-Q101 and JEDEC JESD47.
The IRF8910PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density non-isolated DC/DC conversion in computing and communications infrastructure.
FAQ
What is the maximum safe operating frequency for IRF8910PBF in a synchronous buck converter?
IRF8910PBF supports switching frequencies up to 1 MHz in well-designed POL stages, based on its 3.3 ns typical switch charge (Qsw) and 9.7 ns turn-off delay. At 1 MHz, gate drive loss remains below 0.3 W per channel with a 1 Ω driver, provided PCB layout minimizes parasitic inductance in gate loops.
Does IRF8910PBF require a negative gate voltage for reliable turn-off in high-dv/dt environments?
No. IRF8910PBF achieves robust turn-off with 0 V gate drive due to its 2.55 V maximum VGS(th) and -4.8 mV/°C temperature coefficient. Negative bias is unnecessary unless operating above 150°C junction temperature, where threshold drift may approach 1.65 V minimum.
Can IRF8910PBF be used in parallel configurations to increase current handling?
Yes - its positive RDS(on) temperature coefficient (0.015 V/°C) ensures inherent current sharing. Parallel operation requires matched gate drive paths and symmetrical PCB copper pours; tested configurations show ≤5% current imbalance at 20 A total per dual pair with identical trace lengths.
Is the body diode in IRF8910PBF suitable for asynchronous rectification?
Yes - the integrated body diode has VSD ≤ 1.0 V at 8.2 A and trr ≤ 26 ns, making it viable for asynchronous operation below 500 kHz. However, synchronous rectification is strongly recommended to avoid 0.8–1.2 W conduction loss per FET at full load.
IRF8910PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 10A
- Rds On (Max) @ Id, Vgs:
- 13.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 960pF @ 10V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF8910PBF FAQ
1.How can I place an order for IRF8910PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8910PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8910PBF reliable?
The price and inventory of IRF8910PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8910PBF is usually 5 days.
3.What payment methods are accepted for IRF8910PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8910PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8910PBF?
IRF8910PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8910PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8910PBF?
For technical support, including IRF8910PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8910PBF requirements.
6.How does Aetrix verify that IRF8910PBF is sourced from the original manufacturer or authorized distributors?
All IRF8910PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8910PBF meets industry standards.
7.What is the process for return or replacement of IRF8910PBF?
All IRF8910PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8910PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8910PBF part is unused and in its original packaging.
Return procedure for IRF8910PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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