Infineon Technologies IRF8910TRPBF

Overview

IRF8910TRPBF from Infineon Technologies is a dual N-channel 20V HEXFET Power MOSFET in SO-8 package, featuring 10.7 mΩ R_DS(on) at V_GS = 10 V, 10 A continuous drain current, and fully characterized avalanche capability. It serves as a synchronous rectifier and control FET pair in point-of-load (POL) converters for high-efficiency DC/DC regulation in graphics cards and server VRMs.

For engineers reviewing the IRF8910TRPBF datasheet, IRF8910TRPBF pinout, IRF8910TRPBF application, or IRF8910TRPBF equivalent, key selection criteria include gate charge partitioning (Q_gd/Q_gs1 ratio), body diode reverse recovery (Q_rr = 6.5–9.7 nC), R_DS(on) temperature stability, and SO-8 thermal resistance (R_θJA = 62.5 °C/W).

Technical Context

This dual MOSFET integrates two matched N-channel silicon HEXFETs in a single SO-8 package with independent source, drain, and gate terminals-D1/S1/G1 and D2/S2/G2-enabling synchronous buck topologies without external pairing. Its ultra-low gate impedance and 7.4 nC total gate charge (typ.) support high-frequency switching up to 1 MHz.

The device features a fully rated 20 V_GS maximum, 1.65–2.55 V gate threshold with negative temperature coefficient (−4.8 mV/°C), and clamped inductive avalanche rating of 80 mJ at I_AS = 8.2 A. Body diode parameters-including V_SD ≤ 1.0 V and t_rr = 17–26 ns-are specified under defined di/dt and junction temperature conditions.

Key Specifications

Pinout & Package

IRF8910TRPBF uses a standard SO-8 surface-mount package (5.0 × 6.0 mm footprint, 1.75 mm height) with exposed drain pad for enhanced thermal conduction. Pin numbering follows JEDEC MS-012AA; top view orientation shows dual-channel symmetry.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.

Compared with Si7850DP-T1-GE3 and IPB80N04S4-02, IRF8910TRPBF offers optimal balance of integrated dual functionality, moderate gate charge, and proven avalanche ruggedness-making it preferred for cost-sensitive, space-constrained POLs where reliability under transient stress is prioritized over absolute lowest R_DS(on).

Availability

IRF8910TRPBF is available at Aetrix Electronics and suitable for graphics card VRMs, server CPU voltage regulators, and game console power management systems requiring stable component supply and long-term industrial availability.

Supply support for IRF8910TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRF8910TRPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and consumer electronics where thermal performance and parametric matching are critical.

FAQ

What is the maximum recommended gate drive voltage for IRF8910TRPBF?

The absolute maximum gate-to-source voltage is ±20 V, but Infineon specifies 10 V as the nominal drive level for full R_DS(on) characterization. Operating above 15 V provides no significant R_DS(on) improvement and increases gate oxide stress risk. For 5 V logic-compatible controllers, the device delivers 14.6 mΩ R_DS(on) max-verified per datasheet Fig. 14.

Does IRF8910TRPBF support synchronous rectification in buck converters?

Yes-its matched dual-channel architecture, low Q_rr (6.5–9.7 nC), and fast t_f (4.1 ns) make it suitable for synchronous rectification. Channel 2 (G2/S2/D2) is typically configured as the low-side FET, leveraging its body diode's 17–26 ns t_rr and ≤1.0 V V_SD to minimize reverse recovery loss during dead-time transitions.

How is thermal performance affected by PCB layout for IRF8910TRPBF?

Thermal resistance drops from 62.5 °C/W (JEDEC standard 2-layer board) to ~35 °C/W with 1-in² 2-oz copper pad, 6 thermal vias, and internal ground plane. The exposed drain pads (pins 7–8) must be soldered directly to this copper; insufficient thermal relief causes junction temperature to exceed 150°C at 2.0 W dissipation-per Fig. 11 transient Z_thJA curves.

Can IRF8910TRPBF replace discrete single-channel MOSFETs in existing designs?

Yes-its pinout matches industry-standard SO-8 dual-FET footprints (e.g., IRF7313, Si4946). However, gate drive sequencing must ensure non-overlapping turn-on to prevent shoot-through, and layout must accommodate independent gate routing to avoid crosstalk-verified using the switching time test circuit in Fig. 16 of the datasheet.