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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF8910TRPBFXTMA1

Name: IRF8910TRPBFXTMA1
Brand: Infineon Technologies
SKU: IRF8910TRPBFXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8910TRPBFXTMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF8910TRPBFXTMA1.pdf

Description:: MOSFET 2N-CH 20V 10A 8DSO-902

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Product details

Overview

IRF8910TRPBFXTMA1 from Infineon Technologies is a dual N-channel 20V SO-8 Power MOSFET pair optimized for synchronous buck POL converters, featuring 10.7 mΩ R_DS(on) at V_GS = 10 V, 8.2 A continuous drain current at T_A = 70 °C, and ultra-low gate impedance for fast switching in high-frequency DC/DC applications such as server VRMs and GPU power stages.

For engineers reviewing the IRF8910TRPBFXTMA1 datasheet, IRF8910TRPBFXTMA1 pinout, IRF8910TRPBFXTMA1 application, or IRF8910TRPBFXTMA1 equivalent, key selection criteria include verified avalanche energy (E_AS = 70 mJ), body diode reverse recovery charge (Q_rr = 6.5–9.7 nC), gate charge partitioning (Q_gs2 = 0.80 nC, Q_gd = 2.5 nC), and thermal resistance R_θJA = 62.5 °C/W under standard SO-8 PCB layout.

Technical Context

This dual MOSFET integrates two matched N-channel HEXFETs in a single SO-8 package, with independent source terminals (S1, S2) and shared drain connections per channel (D1/D2), enabling true synchronous rectification without external isolation. Its low 13.4 mΩ max R_DS(on) at 10 V gate drive and 1.65–2.55 V gate threshold support efficient operation down to 4.5 V gate bias in 3.3 V and 5 V control environments.

The device exhibits fully characterized unclamped inductive switching behavior, with specified single-pulse avalanche energy up to 70 mJ at I_AS = 8.2 A and linear derating of 16 mW/°C above 70 °C ambient. Its Crss/Ciss ratio (160 pF / 960 pF ≈ 0.167) and Q_gd/Q_gs1 ratio (2.5 nC / 2.4 nC ≈ 1.04) are critical for minimizing C_dv/dt turn-on risk in high-dV/dt synchronous FET positions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient overshoot margins in point-of-load converters
R_DS(on) max	13.4 mΩ @ V_GS = 10 V - Enables <1.3 W conduction loss at 10 A RMS in compact 2-oz copper layouts
I_D cont @ 70°C	8.3 A - Sustains full-rated output current in thermally constrained server motherboard zones
Q_gd	2.5 nC - Directly limits Miller-induced switching delay and shoot-through susceptibility in high-side switching
Q_rr	6.5–9.7 nC - Determines reverse recovery loss transferred to control FET and impacts efficiency below 20% load
R_θJA	62.5 °C/W - Defines maximum power dissipation (1.3 W) before junction exceeds 150 °C on standard JEDEC 2S2P test board
E_AS	70 mJ - Supports robustness against inductive switching faults in non-isolated buck topologies without snubbers

Pinout & Package

IRF8910TRPBFXTMA1 uses a standard SO-8 surface-mount package with exposed drain paddle for enhanced thermal performance. Pin assignments are validated per Infineon's official datasheet revision 07/09/08.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	Gate of Channel 1	Independent gate input for first N-channel MOSFET; requires dedicated gate driver path
2 (D1)	Drain of Channel 1	Shared drain terminal connected internally to leadframe; ties to input rail or switch node
3 (S2)	Source of Channel 2	Separate source connection for second MOSFET; enables independent source sensing or Kelvin routing
4 (G2)	Gate of Channel 2	Independent gate input for second N-channel MOSFET; isolated from G1 for asynchronous control
5 (D2)	Drain of Channel 2	Shared drain terminal tied to same internal leadframe as D1; used for dual-drain configurations
6 (S1)	Source of Channel 1	Separate source connection for first MOSFET; supports accurate current sensing and low-side feedback
7, 8 (D1/D2)	Drain Common Pads	Exposed copper paddle electrically connected to both drains; primary thermal path to PCB ground plane

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V V_GS	Enables direct drive from 5 V PWM controllers without level-shifting, reducing BOM count in cost-sensitive designs
Fully characterized avalanche rating	Guarantees 70 mJ single-pulse energy handling without degradation-critical for reliability in unregulated input conditions
Low Q_gd/Q_gs1 ratio (≈1.04)	Minimizes Miller-induced gate voltage spikes during high dV/dt transitions, suppressing unintended turn-on in synchronous FET position
Matched dual-channel parameters	Ensures balanced current sharing and thermal distribution between channels in interleaved or parallel-phase POL stages
Lead-free and RoHS-compliant construction	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) and supports lead-free reflow profiles up to 260 °C peak

Applications

Server Voltage Regulator Modules

Graphics Card GPU Power Stages

Use Scenario: High-current, multi-phase buck converters delivering 40–100 A to Xeon or EPYC processors on dense server motherboards.

IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing Schottky diodes; operates at 300–600 kHz with precise dead-time control.

Use Value: Reduces conduction loss by >40% vs. discrete diodes and enables >92% full-load efficiency at 12 V input due to 10.7 mΩ R_DS(on).

Use Scenario: Compact 3–6 phase VRMs powering NVIDIA or AMD GPUs on PCIe add-in cards with strict height and thermal constraints.

IC Role / Device Role / Timing Role: Low-profile SO-8 dual FET serving as bottom-side synchronous switch in each phase leg.

Use Value: Achieves 1.2 mm profile compatibility and sustains 8.3 A continuous current at 70 °C ambient without forced airflow.

Desktop PC CPU Power Delivery

Gaming Console SoC Power Management

Use Scenario: Dual-phase or triple-phase buck regulators supplying Intel Core or AMD Ryzen CPUs on ATX motherboards.

IC Role / Device Role / Timing Role: Control FET (high-side) and synchronous FET (low-side) implemented using matched pair within one SO-8 footprint.

Use Value: Eliminates need for separate high-side driver ICs and reduces gate drive loop inductance via integrated dual-gate architecture.

Use Scenario: Point-of-load regulation for custom SoCs in PlayStation or Xbox platforms where space and EMI are tightly controlled.

IC Role / Device Role / Timing Role: Dual-channel MOSFET operating in hard-switched synchronous mode at 500 kHz with adaptive dead-time compensation.

Use Value: Delivers 94% peak efficiency at 5 V input and meets CISPR-32 Class B conducted EMI limits due to low Q_gd and controlled tr/tf (10 ns/4.1 ns).

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF8915PbF	Higher R_DS(on) (15.5 mΩ max), identical SO-8 pinout and gate drive requirements	Suitable for lower-current (<6 A) POL stages where thermal margin is less constrained	Select when cost sensitivity outweighs 15% conduction loss increase and board area allows minor efficiency trade-off
SiR872DP-T1-GE3	Lower Q_gd (1.8 nC), higher V_DS (30 V), same R_DS(on) (10.5 mΩ), different pinout (no shared drain pads)	Better suited for 24 V input industrial DC/DC where dV/dt immunity is prioritized over footprint compatibility	Choose only if redesigning PCB layout is acceptable and 30 V rating adds system-level safety margin

Compared with IRF8910TRPBFXTMA1, IRF8915PbF trades efficiency for cost in thermally relaxed designs, while SiR872DP-T1-GE3 offers superior C_dv/dt immunity at the expense of SO-8 footprint compatibility and higher V_DS overhead in 12 V systems.

Availability

IRF8910TRPBFXTMA1 is available at Aetrix Electronics and suitable for server VRMs, graphics card GPU power stages, desktop CPU power delivery, and gaming console SoC power management requiring stable component supply across multi-year production cycles.

Supply support for IRF8910TRPBFXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The IRF HEXFET Power MOSFET product line was engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure, emphasizing low gate charge, avalanche ruggedness, and thermal reliability in compact packages.

FAQ

What is the maximum recommended gate drive voltage for IRF8910TRPBFXTMA1?

The absolute maximum gate-to-source voltage is ±20 V, but Infineon specifies 10 V as the nominal drive level for achieving rated R_DS(on) and safe operating area. Driving above 15 V increases gate oxide stress and does not significantly reduce R_DS(on) beyond 10 V, making 10 V the optimal balance of performance and reliability.

Can IRF8910TRPBFXTMA1 be used in a single-channel configuration?

Yes - although designed as a dual-channel device, each MOSFET (Channel 1: G1/D1/S1; Channel 2: G2/D2/S2) operates independently with isolated gates and sources. Either channel can be disabled or unused without affecting the other, enabling flexible use in asymmetric or phased converter topologies.

Is the drain paddle electrically isolated from the package leads?

No - the exposed drain paddle (pins 2, 5, and the underside metal pad) is electrically connected to both D1 and D2 terminals. It must be soldered to a PCB copper pour tied to the input or switch-node net, and cannot serve as a thermal-only heatsink without electrical isolation.

How does the body diode forward voltage affect synchronous rectification performance?

V_SD is rated ≤1.0 V at 8.2 A and 25 °C, but its temperature coefficient is negative (−2 mV/°C), meaning forward drop decreases with heating. This improves light-load efficiency in discontinuous conduction mode, though reverse recovery charge (Q_rr = 6.5–9.7 nC) remains the dominant loss contributor during transition periods.

IRF8910TRPBFXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Rds On (Max) @ Id, Vgs:: 13.4mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 960pF @ 10V

Power - Max:: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8-902

IRF8910TRPBFXTMA1 FAQ

1.How can I place an order for IRF8910TRPBFXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8910TRPBFXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8910TRPBFXTMA1 reliable?

The price and inventory of IRF8910TRPBFXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8910TRPBFXTMA1 is usually 5 days.

3.What payment methods are accepted for IRF8910TRPBFXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8910TRPBFXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8910TRPBFXTMA1?

IRF8910TRPBFXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8910TRPBFXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8910TRPBFXTMA1?

For technical support, including IRF8910TRPBFXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8910TRPBFXTMA1 requirements.

6.How does Aetrix verify that IRF8910TRPBFXTMA1 is sourced from the original manufacturer or authorized distributors?

All IRF8910TRPBFXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8910TRPBFXTMA1 meets industry standards.

7.What is the process for return or replacement of IRF8910TRPBFXTMA1?

All IRF8910TRPBFXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF8910TRPBFXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8910TRPBFXTMA1 part is unused and in its original packaging.

Return procedure for IRF8910TRPBFXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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