Infineon Technologies IRF8915

Overview

IRF8915 from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, designed as synchronous rectifier and control FET in point-of-load (POL) converters. It features 20 V V_DS, 14.6 mΩ typical R_DS(on) at V_GS = 10 V, 8.9 A continuous drain current, ultra-low gate impedance, and fully characterized avalanche capability.

For engineers reviewing the IRF8915 datasheet, IRF8915 pinout, IRF8915 application, or IRF8915 equivalent, key selection criteria include R_DS(on) at 4.5 V and 10 V, Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery charge (Q_rr = 3.5–5.2 nC), and thermal resistance R_θJA = 62.5 °C/W in SO-8.

Technical Context

The IRF8915 integrates two matched N-channel MOSFETs in a single SO-8 footprint to enable compact dual-FET topologies-e.g., high-side control FET + low-side synchronous rectifier-in non-isolated buck converters. Its low 14.6 mΩ R_DS(on) at 10 V and 21.6 mΩ at 4.5 V supports efficient operation across input voltage ranges from 3.3 V to 16 V.

It delivers robust unclamped inductive switching performance with 15 mJ single-pulse avalanche energy at I_AS = 7.1 A, and includes a fully specified body diode (V_SD ≤ 1.0 V, t_rr = 13–19 ns, Q_rr = 3.5–5.2 nC), critical for synchronous rectification in high-frequency POL designs.

Key Specifications

Pinout & Package

IRF8915 is housed in a standard SO-8 surface-mount package (5.0 mm × 6.0 mm × 1.75 mm), with exposed drain pad for enhanced thermal conduction. The device contains two independent N-channel MOSFETs sharing no internal connection - D1/S1/G1 and D2/S2/G2 are fully isolated terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.

Compared with SiR872DP and DMN3026LSD, the IRF8915 offers optimal balance of low-voltage operation (20 V), sub-15 mΩ R_DS(on), and ultra-low Q_gd for high-frequency, high-density POL converters - making it preferred for 12 V input systems where thermal and EMI constraints dominate.

Availability

IRF8915 is available at Aetrix Electronics and suitable for server VRMs, graphics card power stages, desktop motherboard POL converters, and game console SoC power rails requiring stable component supply and long-term industrial availability.

Supply support for IRF8915 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IRF8915 belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

Is IRF8915 suitable for 4.5 V gate drive in synchronous buck topologies?

Yes. The IRF8915 is fully specified down to V_GS = 4.5 V, with R_DS(on) = 21.6 mΩ (typ) and 27 mΩ (max) at that voltage. Its gate threshold voltage (V_GS(th)) ranges from 1.7 V to 2.5 V, ensuring reliable turn-on with standard logic-level PWM controllers. Body diode forward voltage remains ≤1.0 V, supporting efficient synchronous rectification even at reduced gate bias.

What is the maximum recommended PCB copper area for the drain thermal pad?

For operation at full-rated power (1.3 W at T_A = 70 °C), Infineon recommends a minimum 200 mm² (≈14 mm × 14 mm) of 2-oz copper connected to the exposed drain pad (pins 5–8) via ≥6 thermal vias (0.3 mm diameter, filled or plated). Larger copper areas further reduce R_θJA; measured data shows R_θJA improves from 62.5 °C/W to ~45 °C/W with 400 mm² copper.

Does IRF8915 require external gate resistors for stability in 1 MHz switching?

Not necessarily - its ultra-low gate impedance allows direct drive from most integrated PWM gate drivers (e.g., ISL63xx, MP2315). However, a 1–5 Ω series gate resistor is recommended to dampen potential ringing caused by PCB trace inductance and minimize EMI. Layout best practice mandates <5 mm gate loop length and separation from high-dV/dt drain paths to prevent coupling.

Can IRF8915 replace two discrete SO-8 MOSFETs in existing designs?

Yes - the IRF8915 is pin-compatible with standard SO-8 footprints and electrically isolates both FETs (D1/S1/G1 and D2/S2/G2), allowing drop-in replacement of two discrete devices. No layout change is needed beyond verifying that the shared drain pad meets thermal requirements. Pin 1 = G1, Pin 2 = S1, Pin 3 = D1, Pin 4 = D2, Pin 6 = G2, Pin 7 = S2, Pins 5/8 = common drain thermal pad.