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Infineon Technologies IRF8915TRPBF
- Part No.:
- IRF8915TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF8915TRPBF.pdf
- Description:
- MOSFET 2N-CH 20V 8.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,775
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Product details
Overview
IRF8915TRPBF from Infineon Technologies is a dual N-channel enhancement-mode Power MOSFET in SO-8 package, configured as two independent low-side switches with 20 V VDS, 18.3 mΩ RDS(on) at VGS = 10 V, and 8.9 A continuous drain current - optimized for synchronous buck converter power stages in point-of-load (POL) applications.
For engineers reviewing the IRF8915TRPBF datasheet, IRF8915TRPBF pinout, IRF8915TRPBF application, or IRF8915TRPBF equivalent, key selection criteria include gate charge (Qg = 4.9–7.4 nC), output capacitance (Coss = 180 pF), body diode reverse recovery (Qrr = 3.5–5.2 nC), thermal resistance (RθJA = 62.5 °C/W), and avalanche energy rating (EAS = 15 mJ).
Technical Context
This dual MOSFET integrates two matched N-channel silicon HEXFET devices sharing a common SO-8 leadframe, enabling compact half-bridge or dual-phase POL configurations without external paralleling. Each channel supports 20 V maximum drain-source voltage and operates with gate threshold voltage of 1.7–2.5 V at 250 µA.
Its low RDS(on) (14.6 mΩ typ. at 10 V) and minimized Qgd/Qgs1 ratio reduce switching losses and Cdv/dt turn-on risk in high-frequency synchronous rectification. The fully characterized avalanche capability ensures robustness under inductive switching stress in unclamped load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - defines maximum input voltage compatibility in 12 V and 5 V POL systems |
| RDS(on) max | 18.3 mΩ @ VGS = 10 V - sets conduction loss floor for 8.9 A continuous operation at 25°C |
| Qg | 4.9–7.4 nC - determines gate drive power and switching speed in 300–1000 kHz converters |
| Coss | 180 pF - impacts turn-off energy loss and resonant behavior during dead-time transitions |
| EAS | 15 mJ - enables reliable operation under single-pulse inductive fault conditions up to 7.1 A |
| Qrr | 3.5–5.2 nC - quantifies body diode recovery loss transferred to control FET in synchronous topology |
| RθJA | 62.5 °C/W - establishes thermal derating limit: 7.1 A max at 70°C ambient |
Pinout & Package
IRF8915TRPBF uses an SO-8 surface-mount package with exposed drain pad for thermal enhancement. Pin numbering follows standard top-view orientation (pin 1 at top-left corner).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | High-current power path for first MOSFET; connected to exposed pad for thermal conduction |
| 2 (G1) | Gate of Channel 1 | Control input requiring <2.5 V threshold; isolated from other channel's gate |
| 3 (S1) | Source of Channel 1 | Return node for Channel 1; electrically separate from S2 |
| 4 (S2) | Source of Channel 2 | Return node for Channel 2; not internally tied to S1 |
| 5 (G2) | Gate of Channel 2 | Independent control input; identical threshold and drive requirements as G1 |
| 6 (D2) | Drain of Channel 2 | Second high-current power path; shares thermal pad with D1 |
| 7, 8 | Exposed Drain Pad | Common thermal and electrical connection for both drains; must be soldered to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate impedance | Enables fast, low-loss switching with minimal gate driver overshoot in high-dV/dt environments |
| Fully characterized avalanche voltage/current | Guarantees 7.1 A IAR and 15 mJ EAS performance without derating in unclamped inductive loads |
| Lead-free SO-8 package | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements |
| Matched dual-channel parameters | Ensures balanced current sharing and timing in dual-phase or interleaved POL designs |
Applications
| Desktop PC VRM | Server CPU Core Regulator |
|---|---|
Use Scenario: High-efficiency 12 V input to 1.0–1.8 V output conversion for multi-core CPUs with dynamic load steps up to 100 A/µs. IC Role / Device Role: Dual low-side synchronous rectifier replacing Schottky diodes in 2-phase buck converter. Use Value: Reduces conduction loss by >40% vs. discrete 12 V MOSFETs due to 18.3 mΩ RDS(on) and shared thermal pad. | Use Scenario: Multi-phase core voltage regulation for dual-socket Xeon platforms with tight transient response requirements. IC Role / Device Role: Paired low-side switch in interleaved 4+ phase topology, operating at 500 kHz switching frequency. Use Value: Enables <1.5% output voltage deviation under 50 A step load via low Qrr (3.5 nC) and fast trr (13 ns) body diode. |
| Graphics Card GPU Power Stage | Game Console SoC Supply |
Use Scenario: Compact 5 V input to 0.8–1.2 V GPU core supply delivering up to 400 W peak power in constrained board area. IC Role / Device Role: Dual-channel low-side FET in 3-phase buck stage, leveraging SO-8 footprint for layout density. Use Value: Achieves >92% efficiency at 200 W load using low Coss (180 pF) to minimize turn-off loss and reduce EMI. | Use Scenario: Low-noise, high-reliability 3.3 V to 1.1 V POL supply for ARM-based multimedia SoC with burst-mode operation. IC Role / Device Role: Synchronous rectifier in single-phase buck converter supporting discontinuous conduction mode (DCM). Use Value: Maintains stable regulation down to 10 mA load via low VGS(th) (1.7 V min) and minimal gate charge (4.9 nC). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel low-side MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF8910TRPBF | Higher RDS(on) (22 mΩ), same VDS and package | Suitable for lower-current (<6 A) POL where thermal margin is less critical | Select when cost sensitivity outweighs efficiency targets and board space allows higher conduction loss |
| Si7852DP-T1-GE3 | Dual N-channel in PowerPAK SO-8; RDS(on) = 16.5 mΩ, Qg = 6.8 nC, Coss = 200 pF | Offers tighter RDS(on) tolerance but higher Coss; requires revised gate drive tuning | Prefer when optimizing for lowest on-resistance in thermally limited layouts, accepting minor increase in switching loss |
Compared with IRF8915TRPBF, IRF8910TRPBF trades 20% higher conduction loss for lower unit cost, while Si7852DP-T1-GE3 delivers 10% lower RDS(on) at the expense of 11% higher Coss - making IRF8915TRPBF the balanced choice for 7–9 A POL designs prioritizing thermal reliability and gate drive simplicity.
Availability
IRF8915TRPBF is available at Aetrix Electronics and suitable for desktop PC VRMs, server CPU core regulators, and graphics card GPU power stages requiring stable component supply across extended production lifecycles.
Supply support for IRF8915TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The IRF8915TRPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-frequency DC/DC conversion in computing and consumer electronics where low RDS(on), controlled gate charge, and avalanche ruggedness are essential.
FAQ
What is the maximum continuous drain current for each channel at 70°C ambient?
Each channel supports 7.1 A continuous drain current at TA = 70°C with proper PCB copper area for thermal dissipation. This is derived from the 8.9 A rating at 25°C and the linear derating factor of 0.016 W/°C, assuming RθJA = 62.5 °C/W and PD = 1.3 W at 70°C. Operation above this requires forced airflow or enhanced heatsinking.
Can IRF8915TRPBF be used as a high-side switch in a buck converter?
No - IRF8915TRPBF is designed exclusively as a low-side N-channel MOSFET. Its gate threshold voltage (1.7–2.5 V) and lack of integrated bootstrap circuitry make it unsuitable for high-side operation without external level-shifting gate drive. It must be paired with a dedicated high-side controller or complementary P-channel device.
Is the body diode suitable for reverse recovery in synchronous rectification?
Yes - the integrated body diode is fully characterized with trr = 13–19 ns and Qrr = 3.5–5.2 nC at IS = 7.1 A, enabling efficient synchronous rectification in buck converters up to 1 MHz. However, its forward voltage (VSD ≤ 1.0 V) remains higher than Schottky alternatives, so optimal efficiency requires precise dead-time control.
Does IRF8915TRPBF require special PCB layout considerations for thermal performance?
Yes - the exposed drain pad (pins 1, 6, and thermal pad) must be soldered to a minimum 200 mm² copper pour with ≥4 thermal vias (0.3 mm diameter) connecting to inner ground planes. Insufficient copper area causes junction temperature to exceed 150°C at rated current, triggering thermal shutdown or accelerated parametric drift.
IRF8915TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 8.9A
- Rds On (Max) @ Id, Vgs:
- 18.3mOhm @ 8.9A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 540pF @ 10V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF8915TRPBF FAQ
1.How can I place an order for IRF8915TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8915TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8915TRPBF reliable?
The price and inventory of IRF8915TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8915TRPBF is usually 5 days.
3.What payment methods are accepted for IRF8915TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8915TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8915TRPBF?
IRF8915TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8915TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8915TRPBF?
For technical support, including IRF8915TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8915TRPBF requirements.
6.How does Aetrix verify that IRF8915TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF8915TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8915TRPBF meets industry standards.
7.What is the process for return or replacement of IRF8915TRPBF?
All IRF8915TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8915TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8915TRPBF part is unused and in its original packaging.
Return procedure for IRF8915TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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