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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9335TRPBF

Name: IRF9335TRPBF
Brand: Infineon Technologies
SKU: IRF9335TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9335TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF9335TRPBF.pdf

Description:: MOSFET P-CH 30V 5.4A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF9335TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -30 V V_DS, 59 mΩ R_DS(on) at V_GS = -10 V, and -5.4 A continuous drain current at T_A = 25°C. It integrates a robust body diode and supports high-efficiency synchronous buck, load switch, and reverse polarity protection circuits in industrial power supplies.

For engineers reviewing the IRF9335TRPBF datasheet, IRF9335TRPBF pinout, IRF9335TRPBF application, or IRF9335TRPBF equivalent, key selection criteria include verified gate threshold voltage (-1.3 to -2.4 V), low Q_g (9.1 nC typical), avalanche energy rating (up to 450 mJ), SO-8 thermal performance (R_θJA = 50°C/W), and RoHS-compliant lead-free construction.

Technical Context

This MOSFET operates as a high-side or common-source switching device with negative gate drive logic. Its P-channel architecture enables simple high-side configuration without level-shifting circuitry, while its 110 mΩ R_DS(on) at V_GS = -4.5 V supports 3.3 V logic-level control in battery-powered systems.

The device features a fully characterized body diode (V_SD = -1.2 V at I_S = -2.5 A, t_rr = 14–21 ns), enabling use in freewheeling paths and unclamped inductive switching. Thermal design is supported by validated junction-to-ambient (50°C/W) and junction-to-drain (20°C/W) resistance values under standard PCB mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage before avalanche conduction begins; defines safe operating range in 24 V rail applications.
R_DS(on) @ V_GS = -10 V	59 mΩ max - Conduction loss of ≤340 mW at -5.4 A, enabling thermally efficient operation without heatsink in low-power SMPS.
R_DS(on) @ V_GS = -4.5 V	110 mΩ max - Enables direct interface with 3.3 V microcontrollers or logic drivers without gate boosting.
Q_g	9.1 nC typical - Gate charge determines required driver strength and switching loss; compatible with low-current gate drivers (e.g., TC4427).
E_AS	450 mJ max - Single-pulse avalanche energy rating ensures ruggedness against inductive kickback in motor or solenoid drive.
t_r/t_f	19 ns / 15 ns - Fast switching transitions minimize overlap loss in hard-switched topologies up to ~500 kHz.
R_θJA	50°C/W - Measured on 1-inch² copper board; sets maximum ambient temperature limit for 1.6 W dissipation at T_J = 150°C.

Pinout & Package

IRF9335TRPBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with 1.27 mm pitch, 5.0 × 6.2 mm footprint, and MSL1 moisture sensitivity rating. The package supports reflow soldering per J-STD-020D and provides adequate thermal dissipation for medium-power switching.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires negative voltage relative to source to turn on; threshold range -1.3 to -2.4 V ensures compatibility with 3.3 V/5 V logic.
2 (S)	Source	Reference node for gate drive and current return path; tied to system ground in low-side configuration or positive rail in high-side setup.
3 (S)	Source	Second source connection; paralleled internally with Pin 2 to reduce source inductance and improve current sharing in high-frequency switching.
4 (S)	Source	Third source connection; further lowers effective source impedance and enhances thermal conduction from die to PCB copper.
5 (D)	Drain	Main current-carrying output; connected to load or input rail; electrically isolated from package tab (no exposed drain pad).
6 (D)	Drain	Second drain connection; reduces drain loop inductance and improves EMI performance in high-di/dt applications.
7 (D)	Drain	Third drain connection; enhances current handling and thermal spreading across multiple pins.
8 (D)	Drain	Fourth drain connection; completes quad-drain layout for optimized power delivery and reduced hot-spot formation.

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching with simple negative gate bias-no bootstrap capacitor or level shifter needed in DC-DC converters.
RoHS-compliant, lead-free	Meets global environmental regulations; Pb-free plating and halogen-free mold compound ensure compliance in automotive and industrial end markets.
Low gate charge (9.1 nC)	Reduces driver power consumption and switching losses; allows use of cost-effective SOT-23 gate drivers in space-constrained designs.
Fast body diode (t_rr = 14–21 ns)	Minimizes reverse recovery loss and voltage overshoot during commutation-critical for synchronous rectification and flyback snubbing.
SO-8 thermal performance	R_θJA = 50°C/W on 1-inch² copper enables 1.6 W continuous operation at 70°C ambient-sufficient for 5–12 V input, 1–3 A output DC-DC stages.

Applications

Industrial Power Supply

Reverse Polarity Protection

Use Scenario: 24 V input, 5 V/2 A isolated DC-DC converter with synchronous rectification in PLC I/O modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency above 85%.

Use Value: Achieves 0.35 V lower forward drop than 40 V Schottky, cutting rectifier loss by >60% at full load and reducing thermal stress on secondary-side PCB.

Use Scenario: 12 V battery-powered handheld test equipment with USB-C port requiring polarity reversal immunity.

IC Role / Device Role / Timing Role: Low-loss reverse-voltage blocking switch placed between connector and main power rail.

Use Value: Limits reverse leakage to <100 nA and withstands -30 V fault condition without latch-up or degradation-ensuring field-reliability over 10-year service life.

Motor Drive H-Bridge

Hot-Swap Controller

Use Scenario: 24 V brushed DC motor driver in automated valve actuator with bidirectional control and stall detection.

IC Role / Device Role / Timing Role: Upper-leg P-channel switch in half-bridge topology, driven directly by MCU GPIO with pull-up resistor.

Use Value: Eliminates need for high-side gate driver IC; enables fast turn-off (t_f = 15 ns) to prevent shoot-through during direction reversal.

Use Scenario: 5 V backplane slot supporting hot-pluggable daughter cards in telecom shelf management system.

IC Role / Device Role / Timing Role: Inrush current limiter and fault-isolation switch controlled by dedicated hot-swap controller (e.g., LTC4215).

Use Value: Limits inrush to <1.5 A via controlled gate ramp; sustains 5.4 A steady-state with <300 mW conduction loss-preserving voltage margin across long traces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9328TRPBF	V_DS = -30 V, R_DS(on) = 48 mΩ @ -10 V (lower), Q_g = 11.5 nC (higher), SO-8	Better conduction loss but slower switching; suited for lower-frequency (<200 kHz), higher-current loads	Select when minimizing I²R loss dominates over switching loss-e.g., linear regulators or battery disconnect switches.
Si2301DDS-T1-GE3	V_DS = -20 V, R_DS(on) = 115 mΩ @ -4.5 V, SOT-23 package, lower current rating (-2.7 A)	Smaller footprint and logic-level compatible, but limited voltage headroom and thermal capacity	Prefer for ultra-compact 3.3 V systems where space is critical and 20 V max rail suffices-e.g., portable sensor nodes.

Compared with IRF9335TRPBF, IRF9328TRPBF trades faster switching for lower R_DS(on), while Si2301DDS-T1-GE3 sacrifices voltage rating and thermal robustness for miniaturization-making IRF9335TRPBF the balanced choice for 24 V industrial switching with moderate frequency and reliability demands.

Availability

IRF9335TRPBF is available at Aetrix Electronics and suitable for industrial power supplies, reverse polarity protection circuits, and motor drive H-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF9335TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line was originally developed by International Rectifier and continues under Infineon to deliver rugged, high-efficiency discrete power switches for industrial, computing, and renewable energy applications.

FAQ

What is the maximum safe operating temperature for IRF9335TRPBF?

The IRF9335TRPBF has a maximum junction temperature (T_J) of +150°C and storage temperature range of -55°C to +150°C. Under continuous operation on a 1-inch² copper board, it reaches thermal equilibrium at 70°C ambient when dissipating 1.6 W-verified by R_θJA = 50°C/W and derating curves in Fig. 9 of the official datasheet.

Does IRF9335TRPBF require a gate resistor for stability?

Yes-a gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 66 pF) and PCB trace inductance. Without it, fast edges (t_r/t_f < 20 ns) may induce oscillation, increasing EMI and risking false turn-on due to dV/dt coupling-especially in high-noise industrial environments.

Can IRF9335TRPBF be used in parallel with identical units?

Yes-its positive temperature coefficient of R_DS(on) (0.019 V/°C) ensures inherent current sharing. However, matched gate drive routing, symmetrical PCB layout, and individual gate resistors are required to avoid dynamic imbalance. Derating total current by 15% is advised for reliability in parallel configurations.

Is the body diode suitable for continuous freewheeling in a buck converter?

Yes-the integrated body diode is rated for continuous source current (I_S) of -2.5 A at T_J = 25°C and pulsed current (I_SM) up to -43 A. With V_SD = -1.2 V and t_rr = 14–21 ns, it supports synchronous rectification in buck converters up to 500 kHz, provided thermal limits are observed and dead-time is optimized to avoid cross-conduction.

IRF9335TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 59mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 386 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF9335TRPBF FAQ

1.How can I place an order for IRF9335TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9335TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9335TRPBF reliable?

The price and inventory of IRF9335TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9335TRPBF is usually 5 days.

3.What payment methods are accepted for IRF9335TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9335TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9335TRPBF?

IRF9335TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9335TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9335TRPBF?

For technical support, including IRF9335TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9335TRPBF requirements.

6.How does Aetrix verify that IRF9335TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF9335TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9335TRPBF meets industry standards.

7.What is the process for return or replacement of IRF9335TRPBF?

All IRF9335TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9335TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9335TRPBF part is unused and in its original packaging.

Return procedure for IRF9335TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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