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Infineon Technologies IRF9358PBF
- Part No.:
- IRF9358PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF9358PBF.pdf
- Description:
- MOSFET 2P-CH 30V 9.2A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,274
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Product details
Overview
IRF9358PBF from Infineon Technologies is a dual P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -30 V VDS, 16.3 mΩ RDS(on) @ -10 V VGS, and -9.2 A continuous drain current at 25°C. It serves as a synchronous battery charge/discharge switch in notebook PC power management systems with integrated body diode and avalanche-rated operation.
For engineers reviewing the IRF9358PBF datasheet, IRF9358PBF pinout, IRF9358PBF application, or IRF9358PBF equivalent, key selection criteria include its dual P-channel topology, low gate charge (19 nC), SO-8 thermal performance (RθJA = 62.5°C/W), and -55°C to +150°C junction temperature range.
Technical Context
This device integrates two matched P-channel MOSFETs in a single SO-8 package, enabling compact high-side switching without external level-shifting circuitry. Its gate threshold voltage (-1.3 to -2.4 V) supports direct logic-level drive from 3.3 V or 5 V controllers.
The MOSFET features fully characterized avalanche energy rating (210 mJ), reverse recovery parameters (trr = 55–83 ns, Qrr = 35–53 nC), and specified dynamic parameters including Ciss = 1740 pF and Qgd = 8.9 nC - critical for optimizing switching loss in synchronous buck or battery protection topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - maximum blocking voltage for battery-side high-side switching in 3-cell Li-ion systems |
| RDS(on) @ -10 V | 16.3 mΩ - conduction loss of ~1.4 mW at 9.2 A, enabling efficient discharge path in portable systems |
| Qg | 19 nC - gate drive energy requirement for 4.5 V gate drive, supporting fast turn-on in <100 ns applications |
| ID (25°C) | -9.2 A - continuous current capability sufficient for >20 W load switching in notebook battery packs |
| trr | 55–83 ns - body diode recovery time enabling use in synchronous rectification without external Schottky |
| EAS | 210 mJ - unclamped inductive switching robustness for fault-tolerant battery disconnect circuits |
| RθJA | 62.5 °C/W - thermal resistance on standard FR-4 board, limiting max power dissipation to 1.3 W at 70°C ambient |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin Small Outline Integrated Circuit), 5.0 mm × 6.0 mm footprint, 1.27 mm pitch, MSL1 rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source 1 / Source 2 | Common-source connection points for dual P-channel configuration; electrically tied internally in some variants but isolated per datasheet Fig 1–2 output curves |
| 5, 6, 7, 8 | Drain 1 / Drain 2 | Separate drain terminals for independent channel control; enables dual-switch configurations like dual battery selector or redundant load switches |
| G1, G2 | Gate 1 / Gate 2 | Independent gate inputs allowing asynchronous control of each MOSFET; pin 1 = G1, pin 8 = G2 per SO-8 marking orientation and layout diagrams |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel integration | Two matched MOSFETs in one SO-8 package reduce PCB area by >40% vs. discrete dual-SOIC solution |
| Low RDS(on) @ -4.5 V | 23.8 mΩ enables direct interface with 3.3 V microcontrollers without gate drivers |
| Avalanche-rated operation | 210 mJ single-pulse EAS supports reliable operation during battery short-circuit or hot-plug events |
| Body diode with trr < 83 ns | Enables synchronous rectification in bidirectional DC-DC converters without external diodes |
| RoHS-compliant, halogen-free | Meets IPC-1752A Class 2 material declaration requirements for consumer electronics |
Applications
| Battery Charge/Discharge Control | Notebook PC Power Path Management |
|---|---|
Use Scenario: Bidirectional current control between system load and multi-cell Li-ion battery pack during charge and discharge cycles. IC Role / Device Role / Timing Role: Dual P-channel high-side switch managing power flow direction and isolating battery during fault conditions. Use Value: Eliminates need for external level shifters and reduces BOM count by integrating two matched switches with shared thermal path. | Use Scenario: Seamless transition between AC adapter and battery power sources while maintaining uninterrupted system operation. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET pair acting as ideal diode controller replacement with ultra-low forward drop. Use Value: Achieves <15 mV forward voltage drop at 5 A using RDS(on) = 16.3 mΩ, cutting conduction loss by 70% vs. Schottky diodes. |
| USB-C Power Delivery Sink Protection | Industrial Portable Equipment Load Switching |
Use Scenario: Overvoltage and reverse-current protection for USB-C PD input ports accepting up to 20 V. IC Role / Device Role / Timing Role: High-side P-channel switch enabling fast (<1 µs) disconnect upon VBUS overvoltage detection. Use Value: Leverages low Qg (19 nC) and fast tf (69 ns) to meet USB PD 3.1 fault response timing requirements. | Use Scenario: Controlled power-up sequencing and inrush limiting for motor drivers and sensor modules in handheld test equipment. IC Role / Device Role / Timing Role: Soft-start enabled load switch using gate resistor control of dV/dt during turn-on. Use Value: Uses VGS(th) (-1.3 to -2.4 V) tolerance to implement simple RC-based soft-start without dedicated IC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 14.5 mΩ @ -10 V, Qg = 22 nC, SO-8, but single-channel only | Requires two devices for dual function; higher gate drive energy increases controller loading | Preferred when higher current density per channel is needed and board space allows dual placement |
| DMC3025LSD-13 | Dual P-channel, RDS(on) = 25 mΩ @ -4.5 V, Qg = 15 nC, same SO-8 footprint | Higher RDS(on) limits use to ≤5 A applications; lower Qg improves switching efficiency at light loads | Selected where 3.3 V gate drive margin is critical and peak current stays below 5 A |
Compared with Si7851DP-T1-GE3 and DMC3025LSD-13, IRF9358PBF uniquely delivers dual-channel integration with sub-17 mΩ conduction loss and full avalanche rating - making it optimal for space-constrained, fault-resilient battery management where both channels must share thermal and layout constraints.
Availability
IRF9358PBF is available at Aetrix Electronics and suitable for notebook PC battery management, USB-C PD sink protection, and industrial portable equipment load switching requiring stable component supply across extended product lifecycles.
Supply support for IRF9358PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF9358PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability battery protection and power-path control in portable computing and mobile infrastructure.
FAQ
What is the maximum safe operating voltage for IRF9358PBF in continuous DC blocking?
The absolute maximum VDS rating is -30 V, verified under pulsed conditions with ID ≤ -250 µA. For continuous DC blocking, derating is required above 24 V due to temperature-dependent leakage and avalanche onset; design margin should maintain VDS ≤ -24 V at TJ = 125°C per datasheet Figure 8.
Can IRF9358PBF be used in back-to-back configuration for AC switching?
No - IRF9358PBF is a P-channel device with intrinsic body diodes oriented for DC high-side switching only. Its structure lacks symmetrical blocking capability in both directions; AC switching requires complementary N+P pairs or dedicated AC switches like TRIACs or solid-state relays.
Does IRF9358PBF require external gate resistors for EMI control?
Yes - although not mandatory for basic operation, a 10–22 Ω series gate resistor is recommended to dampen ringing caused by Qgd/Ciss interaction during fast transitions. This reduces dv/dt-induced coupling and meets CISPR-22 Class B conducted emissions limits in notebook designs.
How does the SO-8 package affect thermal performance in high-current operation?
With RθJA = 62.5°C/W on standard FR-4, the SO-8 limits continuous power dissipation to 1.3 W at 70°C ambient. To sustain 9.2 A, copper pour ≥1 in² per drain pad and thermal vias under exposed pads are required - otherwise, derating to ≤7.3 A at 70°C is necessary per datasheet Absolute Maximum Ratings table.
IRF9358PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 9.2A
- Rds On (Max) @ Id, Vgs:
- 16.3mOhm @ 9.2A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1740pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF9358PBF FAQ
1.How can I place an order for IRF9358PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9358PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9358PBF reliable?
The price and inventory of IRF9358PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9358PBF is usually 5 days.
3.What payment methods are accepted for IRF9358PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9358PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9358PBF?
IRF9358PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9358PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9358PBF?
For technical support, including IRF9358PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9358PBF requirements.
6.How does Aetrix verify that IRF9358PBF is sourced from the original manufacturer or authorized distributors?
All IRF9358PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9358PBF meets industry standards.
7.What is the process for return or replacement of IRF9358PBF?
All IRF9358PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9358PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9358PBF part is unused and in its original packaging.
Return procedure for IRF9358PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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