Infineon Technologies IRF9358TRPBF

Overview

IRF9358TRPBF from Infineon Technologies is a dual P-channel enhancement-mode HEXFET® power MOSFET in SO-8 package, rated for -30 V V_DS, 16.3 mΩ R_DS(on) @ -10 V V_GS, and -9.2 A continuous drain current at 25°C. It serves as a synchronous battery charge/discharge switch in notebook PC power management systems with integrated body diode and avalanche-rated operation.

For engineers reviewing the IRF9358TRPBF datasheet, IRF9358TRPBF pinout, IRF9358TRPBF application, or IRF9358TRPBF equivalent, key selection criteria include its dual P-channel topology, low gate charge (19 nC), SO-8 thermal performance (R_θJA = 62.5°C/W), and -55°C to +150°C operating junction temperature range.

Technical Context

This device integrates two matched P-channel MOSFETs in a single SO-8 package, enabling complementary high-side switching without external level-shifting. Its gate threshold voltage (-1.3 to -2.4 V) supports direct logic-level drive from 3.3 V or 5 V controllers.

The MOSFET features a robust body diode with 55–83 ns reverse recovery time and 35–53 nC Q_rr, optimized for synchronous buck converter output stages and battery protection circuits where bidirectional conduction and fast turn-off are critical.

Key Specifications

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin Small Outline Integrated Circuit), JEDEC MS-012AC compliant, MSL1 rated, 1.75 mm max height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Compared with IRF9358TRPBF, Si7997DP-T1-GE3 offers tighter gate threshold control at the cost of higher switching loss, while DMC3025LSD-13 prioritizes speed over conduction efficiency-making IRF9358TRPBF the balanced choice for notebook battery switches requiring both low R_DS(on) and robust avalanche capability.

Availability

IRF9358TRPBF is available at Aetrix Electronics and suitable for notebook PC battery protection, USB-C PD sink power path management, and industrial portable equipment battery interface applications requiring stable component supply and long-term lifecycle support.

Supply support for IRF9358TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification standards.

The IRF9358TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability battery management and power distribution in portable computing and mobile industrial equipment.

FAQ

What is the maximum safe operating frequency for IRF9358TRPBF in a synchronous buck converter?

IRF9358TRPBF supports up to 1 MHz switching in well-cooled layouts due to its 19 nC gate charge and 7.2 ns rise time. At 500 kHz, typical gate driver power dissipation remains below 120 mW with a 10 Ω driver resistor. Thermal derating above 70°C ambient requires reduced duty cycle or enhanced PCB copper area per the SO-8 R_θJA = 62.5°C/W spec.

Can IRF9358TRPBF be used in parallel configurations for higher current handling?

Yes-its negative temperature coefficient of R_DS(on) (0.02 V/°C) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling. Derate total current by 15% versus sum of individual ratings to account for parametric spread and thermal gradients across the SO-8 package.

Does IRF9358TRPBF require external gate resistors for EMI suppression?

A 4.7–10 Ω series gate resistor is recommended to damp ringing caused by parasitic inductance in high-speed switching. This value balances EMI reduction (by slowing dv/dt) against increased switching loss (146 ns t_d(off) at R_G = 6.8 Ω). Layout optimization-short gate traces and local decoupling-is equally critical for noise control.

How does the body diode performance compare to discrete Schottky diodes in reverse conduction mode?

The integrated body diode has V_SD = -1.2 V at -2.0 A and t_rr = 55–83 ns, offering lower forward drop than silicon diodes but higher than Schottky. Its advantage lies in monolithic integration-no extra footprint or solder joints-while Q_rr = 35–53 nC is manageable in <1 MHz applications with proper snubber design.