Infineon Technologies IRF9362PBF

Overview

IRF9362PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -30 V V_DS, 21 mΩ R_DS(on) at -10 V V_GS, -8.0 A continuous drain current at 25°C, and optimized for synchronous buck converter high-side switching in DC-DC power supplies.

For engineers reviewing the IRF9362PBF datasheet, IRF9362PBF pinout, IRF9362PBF application, or IRF9362PBF equivalent, key selection criteria include verified gate threshold voltage (-1.8 V typ), avalanche energy rating (400 mJ), body diode reverse recovery charge (20–30 nC), and SO-8 thermal performance under 1-inch² copper board conditions.

Technical Context

This device operates as a logic-level-compatible P-channel switch with gate threshold voltage centered at -1.8 V and temperature coefficient of -5.8 mV/°C, enabling reliable turn-on from standard 3.3 V or 5 V controllers. Its low 17.0 mΩ typical R_DS(on) at -10 V V_GS and 32.0 mΩ max at -4.5 V supports efficient high-current switching in compact power stages.

The MOSFET integrates a robust intrinsic body diode with 32–48 ns reverse recovery time and 20–30 nC Q_rr, suitable for freewheeling in non-synchronous topologies. Its 13 nC total gate charge and 6.3 nC gate-to-drain charge support fast switching with moderate gate drive strength while maintaining EMI control.

Key Specifications

Pinout & Package

IRF9362PBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with 1.27 mm pitch, 4.9 mm × 6.0 mm footprint, and MSL1 moisture sensitivity rating. Thermal resistance R_θJA is 62.5°C/W on 1-inch² copper board.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9362PBF, Si7157DP offers better low-V_GS performance at slightly higher gate charge, while DMG2305UVT trades conduction efficiency for compactness and lower drive demand-making each suitable for distinct layout and thermal priorities.

Availability

IRF9362PBF is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, industrial load switches, and reverse polarity protection circuits requiring stable component supply, RoHS compliance, and SO-8 thermal reliability.

Supply support for IRF9362PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors, with global manufacturing, qualification per JEDEC JESD47F, and broad automotive/industrial certification.

The IRF9362PBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in low-voltage DC-DC power conversion and load management applications.

FAQ

What is the maximum continuous drain current for IRF9362PBF at 70°C ambient?

The IRF9362PBF supports -6.4 A continuous drain current at T_A = 70°C with V_GS = -10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits on a standard 1-inch² copper board; actual current capability depends on PCB layout and heatsinking.

Does IRF9362PBF have an integrated body diode, and what are its key parameters?

Yes, IRF9362PBF includes an integral source-drain p-n junction body diode. Key parameters include forward voltage V_SD = -1.2 V at -2.0 A, reverse recovery time t_rr = 32–48 ns, and reverse recovery charge Q_rr = 20–30 nC, all measured at T_J = 25°C with di/dt = 100 A/µs.

Can IRF9362PBF be used in avalanche mode, and what is its rated energy?

Yes, IRF9362PBF is characterized for unclamped inductive switching with a single-pulse avalanche energy rating of 400 mJ at T_J = 25°C, tested with I_AS = -6.4 A, L = 4.6 mH, and R_G = 25 Ω. Repetitive avalanche operation is not recommended without derating and thermal validation.

What is the gate-to-source leakage current specification for IRF9362PBF?

The gate-to-source leakage current is specified as ±100 nA maximum at V_GS = ±20 V and T_J = 25°C - with -100 nA for forward leakage (gate-to-source forward bias) and +100 nA for reverse leakage (gate-to-source reverse bias), ensuring minimal gate drive current burden in high-impedance control circuits.