Infineon Technologies IRF9362TRPBF

Overview

IRF9362TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET^® Power MOSFET in SO-8 package, rated for -30 V V_DS, 8.0 A continuous drain current at 25°C, 21.0 mΩ R_DS(on) at -10 V V_GS, and optimized for high-efficiency DC-DC conversion and load switching in industrial power supplies.

For engineers reviewing the IRF9362TRPBF datasheet, IRF9362TRPBF pinout, IRF9362TRPBF application, or IRF9362TRPBF equivalent, key selection criteria include verified R_DS(on) @ -4.5 V (32.0 mΩ), gate charge (13 nC typ.), body diode reverse recovery (Q_rr = 20–30 nC), thermal resistance (R_θJA = 62.5 °C/W), and SO-8 footprint compatibility with multi-vendor designs.

Technical Context

This device operates as a low-side or high-side synchronous rectifier switch in buck converters and OR-ing circuits, leveraging its negative threshold voltage (-1.3 to -2.4 V) and fast switching characteristics (t_d(off) = 115 ns, t_f = 53 ns). Its integrated body diode supports bidirectional current flow in half-bridge configurations.

Designed for operation with gate drive voltages down to -4.5 V, it maintains stable on-resistance across junction temperatures from -55°C to +150°C, with a positive R_DS(on) temperature coefficient (0.016 Ω/°C linear derating) and avalanche-rated energy (E_AS = 400 mJ at I_AS = -6.4 A).

Key Specifications

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin small-outline integrated circuit per EIA-481/EIA-541 standards; MSL1 per JEDEC J-STD-020D).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, IRF9362TRPBF delivers lower R_DS(on) at both -10 V and -4.5 V gate drive while maintaining SO-8 compatibility and higher avalanche ruggedness-making it optimal for industrial 5–8 A load switching where thermal margin and reliability are prioritized over minimal gate drive current.

Availability

IRF9362TRPBF is available at Aetrix Electronics and suitable for industrial DC-DC converters, hot-swap OR-ing circuits, and motor driver half-bridge legs requiring stable component supply and long-term manufacturability.

Supply support for IRF9362TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET^® Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial, computing, and telecom infrastructure-designed for low R_DS(on), fast switching, and rugged avalanche performance in compact packages.

FAQ

What is the maximum safe operating temperature for IRF9362TRPBF?

The IRF9362TRPBF has a specified junction temperature range of -55°C to +150°C. Its maximum continuous operation depends on ambient conditions and PCB thermal design: at 70°C ambient with standard 1-inch² copper, it supports 6.4 A continuous current. Derating follows 0.016 Ω/°C linear rule above 25°C case temperature, and thermal shutdown occurs only if T_J exceeds 150°C.

Can IRF9362TRPBF be driven directly from a 3.3 V microcontroller GPIO?

No-its gate threshold voltage ranges from -1.3 V to -2.4 V, but reliable full enhancement requires ≥ -4.5 V V_GS to achieve 32.0 mΩ R_DS(on). A 3.3 V GPIO cannot generate sufficient negative gate drive. A level-shifting circuit or dedicated P-channel gate driver (e.g., TC4427 configured for inverting logic) is required to deliver -5 V to -10 V swing relative to source.

Does IRF9362TRPBF include an integrated Schottky diode?

No-it features a monolithic parasitic body diode formed by the MOSFET's p-n junction, not a discrete Schottky. This diode has V_SD = -1.2 V at -2.0 A and reverse recovery charge Q_rr = 20–30 nC. While functional for freewheeling, it is slower and less efficient than a Schottky; external Schottky clamping may be added for critical high-frequency applications.

How does the SO-8 package's exposed drain pad affect thermal performance?

The SO-8 package includes an exposed metal pad (Pin 8) electrically connected to the drain and thermally coupled to internal die. When soldered to a large copper pour, it reduces R_θJA from 62.5 °C/W (standard board) to ~40 °C/W, lowering junction temperature rise by up to 35°C at 8 A. Proper stencil design and solder paste volume are essential to ensure void-free thermal interface.