Infineon Technologies IRF9389TRPBF

Overview

IRF9389TRPBF from Infineon Technologies is a dual-channel SO-8 packaged HEXFET® Power MOSFET integrating an N-channel (30 V, 6.8 A, 27 mΩ) and P-channel (-30 V, -4.6 A, 64 mΩ) device in one monolithic package. It enables compact half-bridge or complementary switching topologies in DC-DC converters, motor drivers, and load switches where space-constrained dual-polarity control is required.

For engineers reviewing the IRF9389TRPBF datasheet, IRF9389TRPBF pinout, IRF9389TRPBF application, or IRF9389TRPBF equivalent, key selection criteria include verified R_DS(on) at 4.5 V gate drive, pulsed current capability (34 A / -23 A), thermal resistance (R_θJA = 62.5 °C/W), and industry-standard SO-8 pin compatibility for high-side P-channel + low-side N-channel configurations.

Technical Context

This dual MOSFET integrates complementary channel types on a single die with independent gate terminals, enabling synchronous rectification and bidirectional current control without external level-shifting circuitry for the P-channel high-side switch. Its gate threshold voltages (V_GS(th) = 1.3–2.3 V for N-ch, -1.3 to -2.3 V for P-ch) support logic-level drive from 3.3 V or 5 V microcontrollers.

The device features low gate charge (Q_g = 6.8 nC / 8.1 nC), fast switching (t_d(on) = 5.1 ns / 8.0 ns), and body diodes with low reverse recovery charge (Q_rr = 2.3–3.5 nC / 4.8–7.2 nC), making it suitable for high-frequency PWM applications up to 1 MHz in buck converters and H-bridge motor control.

Key Specifications

Pinout & Package

IRF9389TRPBF uses an industry-standard SO-8 surface-mount package (5.0 mm × 6.0 mm × 1.75 mm) with exposed drain pad for enhanced thermal performance. Pin numbering follows JEDEC MS-012AC, with pins 1–4 assigned to the N-channel device and pins 5–8 to the P-channel device.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary power MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMC2038LSD-13, IRF9389TRPBF offers superior switching speed (lower t_r/t_f) and lower gate charge, making it optimal for high-frequency, low-duty-cycle applications like Class-D audio amplifiers and resonant LLC controllers where dynamic loss dominates.

Availability

IRF9389TRPBF is available at Aetrix Electronics and suitable for industrial motor drives, USB-C power delivery modules, and automotive body electronics requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IRF9389TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The IRF9389TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, space-constrained DC-DC conversion and motor control applications requiring complementary channel integration and robust thermal performance.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

The N-channel supports 5.4 A and the P-channel supports -3.7 A at T_A = 70°C with V_GS = 10 V on a standard 1 in² copper PCB. Derating follows linear 1.3 W/°C above 70°C ambient, consistent with its R_θJA = 62.5 °C/W rating and SO-8 thermal design.

Can IRF9389TRPBF be used in a synchronous buck converter as both high-side and low-side switches?

Yes - the integrated P-channel high-side and N-channel low-side enable true synchronous operation without bootstrap circuitry. The matched gate thresholds and low Q_g allow clean dead-time control and minimize shoot-through risk when driven by complementary PWM signals.

Is the shared drain pad electrically isolated between N-channel and P-channel?

No - pins 3, 4, 5, and 8 connect to a single internal drain node. This common drain configuration is intentional for half-bridge topologies where both devices share the same switching node, and must be routed as a single high-current net on the PCB.

Does IRF9389TRPBF include ESD protection on gate terminals?

Yes - the device incorporates built-in gate oxide protection rated to ±20 V V_GS, meeting HBM ESD Class 1C (≥2 kV). No external gate resistors or TVS diodes are required for standard handling, though layout best practices (short gate traces, local decoupling) remain essential for noise immunity.