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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9520

Name: IRF9520
Brand: Vishay Siliconix
SKU: IRF9520
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9520

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF9520.pdf

Description:: MOSFET P-CH 100V 6.8A TO220AB

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Product details

Overview

IRF9520 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -100 V V_DS, 6.8 A continuous drain current at 25 °C, and 0.60 Ω R_DS(on) at V_GS = -10 V. It operates up to 175 °C junction temperature and supports repetitive avalanche energy of 6.0 mJ, making it suitable for DC-DC converter high-side switches and motor control H-bridge legs.

For engineers reviewing the IRF9520 datasheet, IRF9520 pinout, IRF9520 application, or IRF9520 equivalent, key selection considerations include its negative gate threshold (-2.0 to -4.0 V), low gate charge (18 nC total), fast switching (9.6 ns turn-on delay), body diode recovery time (98–200 ns), and thermal resistance (2.5 °C/W junction-to-case).

Technical Context

The IRF9520 uses third-generation planar vertical DMOS technology optimized for ruggedness and cost-effective power switching. Its P-channel architecture enables high-side configuration without level-shifting circuitry, and its dynamic dv/dt rating (-5.5 V/ns) ensures noise immunity in inductive load switching.

It features a monolithic integral body diode with 6.3 V forward voltage at -6.8 A and 25 °C, and is specified for unclamped inductive switching with single-pulse avalanche energy up to 300 mJ - validated under V_DD = -25 V, I_AS = -6.8 A, L = 9.7 mH, R_g = 25 Ω conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Maximum blocking voltage for high-side DC-DC or reverse-polarity protection circuits
R_DS(on) @ V_GS = -10 V	0.60 Ω - Enables ≤4.7 W conduction loss at 6.8 A, supporting thermally constrained PCB layouts
Q_g	18 nC - Low gate drive power requirement; compatible with standard logic-level gate drivers
I_D (continuous, T_C = 25 °C)	-6.8 A - Sustains full-load current in 50 W-class power stages with TO-220AB heatsinking
E_AS	300 mJ - Withstands single-pulse inductive energy without failure in relay or solenoid drive
T_J max	+175 °C - Supports operation in sealed enclosures or high-ambient industrial environments
dv/dt rating	-5.5 V/ns - Resists false turn-on during fast voltage transients in motor drive half-bridges

Pinout & Package

IRF9520 is housed in a TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 1.1 N·m screw torque rating. Thermal resistance from junction to case is 2.5 °C/W, enabling direct heatsink attachment via greased flat surface (R_thCS = 0.50 °C/W typical).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat dissipation node	Electrically connected to metal tab; requires isolation washer if mounted to grounded heatsink
Gate	Control input for channel conduction	High-impedance MOS gate; 100 nA leakage at ±20 V ensures low standby power
Source	Reference terminal for gate drive and current return	Common node for load return path; body diode anode ties to source internally

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports ≥10⁶ unclamped inductive switching cycles at I_AR = -6.8 A and E_AR = 6.0 mJ
Dynamic dv/dt immunity	Rated -5.5 V/ns - prevents spurious turn-on in noisy motor drive or SMPS environments
Fast switching	29 ns rise time and 25 ns fall time at V_DD = -50 V, R_g = 18 Ω - reduces switching losses in 100 kHz+ converters
Low R_DS(on) temperature coefficient	ΔR_DS(on)/T_J ~ +0.5%/°C - maintains predictable conduction loss across -55 to +175 °C range
RoHS-compliant Pb-free/halogen-free option	IRF9520PbF-BE3 variant meets JEDEC J-STD-609 Class 1 moisture sensitivity and IPC/JEDEC J-STD-020D reflow profiles

Applications

DC-DC Converter High-Side Switch	Industrial Motor Control H-Bridge
Use Scenario: 24 V input, 12 V output synchronous buck converter requiring reverse polarity protection and high-side switch. IC Role / Device Role / Timing Role: P-channel high-side main switch; operates in hard-switched mode with 100–500 kHz PWM. Use Value: -100 V V_DS margin accommodates 24 V bus transients; 0.60 Ω R_DS(on) limits conduction loss to <1.5 W at 5 A load.	Use Scenario: 24 V brushed DC motor driver with bidirectional control and regenerative braking. IC Role / Device Role / Timing Role: Upper-leg P-channel MOSFET in H-bridge; commutated with dead-time controlled gate drive. Use Value: Integral body diode handles freewheeling current during PWM off-time; 98 ns trr minimizes diode recovery loss during direction reversal.
Reverse Polarity Protection Circuit	AC/DC Power Supply Inrush Limiter
Use Scenario: 48 V telecom power entry module protecting downstream DC-DC converters from accidental reverse battery connection. IC Role / Device Role / Timing Role: Series P-channel pass transistor configured as ideal diode replacement. Use Value: -100 V rating provides 2× safety margin over 48 V nominal; low V_GS(th) allows simple resistor-divider gate bias from input rail.	Use Scenario: 120 VAC input rectified to ~170 VDC, limiting inrush into bulk capacitor using active soft-start. IC Role / Device Role / Timing Role: High-voltage series switch placed between bridge rectifier and bulk capacitor. Use Value: 300 mJ single-pulse avalanche energy absorbs worst-case surge without clamping components; 175 °C T_J supports sustained thermal stress during slow ramp-up.

DC-DC Converter High-Side Switch

Industrial Motor Control H-Bridge

Use Scenario: 24 V input, 12 V output synchronous buck converter requiring reverse polarity protection and high-side switch.

IC Role / Device Role / Timing Role: P-channel high-side main switch; operates in hard-switched mode with 100–500 kHz PWM.

Use Value: -100 V V_DS margin accommodates 24 V bus transients; 0.60 Ω R_DS(on) limits conduction loss to <1.5 W at 5 A load.

Use Scenario: 24 V brushed DC motor driver with bidirectional control and regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg P-channel MOSFET in H-bridge; commutated with dead-time controlled gate drive.

Use Value: Integral body diode handles freewheeling current during PWM off-time; 98 ns trr minimizes diode recovery loss during direction reversal.

Reverse Polarity Protection Circuit

AC/DC Power Supply Inrush Limiter

Use Scenario: 48 V telecom power entry module protecting downstream DC-DC converters from accidental reverse battery connection.

IC Role / Device Role / Timing Role: Series P-channel pass transistor configured as ideal diode replacement.

Use Value: -100 V rating provides 2× safety margin over 48 V nominal; low V_GS(th) allows simple resistor-divider gate bias from input rail.

Use Scenario: 120 VAC input rectified to ~170 VDC, limiting inrush into bulk capacitor using active soft-start.

IC Role / Device Role / Timing Role: High-voltage series switch placed between bridge rectifier and bulk capacitor.

Use Value: 300 mJ single-pulse avalanche energy absorbs worst-case surge without clamping components; 175 °C T_J supports sustained thermal stress during slow ramp-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530	V_DS = -100 V, R_DS(on) = 0.30 Ω @ -10 V, Q_g = 38 nC, I_D = -12 A - lower on-resistance but higher gate charge and cost	Better conduction efficiency in high-current (>8 A) continuous duty; less suitable for high-frequency switching due to slower switching	Select IRF9530 when conduction loss dominates and gate drive capability supports 38 nC charge
STP9PF10	V_DS = -100 V, R_DS(on) = 0.75 Ω @ -10 V, Q_g = 12 nC, I_D = -9 A - slightly higher R_DS(on) but lower Q_g and tighter V_GS(th) distribution (-2.5 to -3.5 V)	Improved gate drive compatibility with 3.3 V microcontrollers; better parametric consistency in production batches	Select STP9PF10 when driving from low-voltage logic or when tighter threshold spread improves system reliability

Compared with IRF9520, IRF9530 offers lower conduction loss but demands more gate drive energy, while STP9PF10 trades modest R_DS(on) increase for reduced Q_g and improved gate threshold uniformity - both require verification of SOA and avalanche performance in target layout.

Availability

IRF9520 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter design, and reverse polarity protection circuits requiring stable component supply and long-term manufacturability.

Supply support for IRF9520 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF9520 belongs to Vishay's third-generation power MOSFET family engineered for ruggedized switching, fast transition times, and cost-effective thermal management in commercial-industrial power systems.

FAQ

What is the maximum continuous drain current for IRF9520 at 100 °C case temperature?

The IRF9520 supports -4.8 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and must be verified against actual board-level thermal resistance and ambient conditions. The IRF9520 datasheet specifies linear derating above 25 °C at 0.40 W/°C, confirming the -4.8 A rating aligns with 60 W maximum power dissipation at T_C = 25 °C.

Does IRF9520 have an integrated body diode, and what are its key parameters?

Yes, the IRF9520 integrates a parasitic p-n body diode with forward voltage V_SD = -6.3 V at -6.8 A and 25 °C, reverse recovery time t_rr = 98–200 ns, and reverse recovery charge Q_rr = 0.33–0.66 μC. These values are measured under standardized conditions (I_F = -6.8 A, dI/dt = 100 A/μs, T_J = 25 °C) and directly impact efficiency in freewheeling and synchronous rectification applications involving the IRF9520.

Can IRF9520 be used in avalanche mode, and what energy level is rated?

The IRF9520 is explicitly rated for repetitive avalanche operation with I_AR = -6.8 A and E_AR = 6.0 mJ, and for single-pulse avalanche with E_AS = 300 mJ. These ratings are validated per test conditions in Figure 12 (V_DD = -25 V, L = 9.7 mH, R_g = 25 Ω). Designers must ensure peak junction temperature remains below 175 °C during avalanche events, as pulse width is limited by thermal constraints - a critical consideration for robust IRF9520 implementation in inductive load switching.

What is the gate threshold voltage range for IRF9520, and how does it affect drive requirements?

The IRF9520 has a gate-source threshold voltage V_GS(th) ranging from -2.0 V to -4.0 V at I_D = -250 μA, meaning it begins conducting significantly at gate voltages more negative than -2.0 V. Full enhancement occurs near -10 V, where R_DS(on) reaches 0.60 Ω. This wide threshold range necessitates gate drive that reliably exceeds -4.0 V to ensure consistent turn-on, especially across temperature and process variation - a key design factor when selecting drivers for the IRF9520.

Is IRF9520PbF-BE3 RoHS-compliant and halogen-free?

Yes, the IRF9520PbF-BE3 variant is both lead (Pb)-free and halogen-free, meeting JEDEC J-STD-609 Class 1 moisture sensitivity and IPC/JEDEC J-STD-020D reflow standards. This is confirmed in the ordering information section of the Vishay datasheet (Document Number: 91074), where "PbF-BE3" explicitly denotes the RoHS-compliant, halogen-free version - distinct from the non-RoHS IRF9520PbF. All IRF9520PbF-BE3 units supplied by Aetrix Electronics carry full compliance documentation.

IRF9520 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 390 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF9520 FAQ

1.How can I place an order for IRF9520 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9520 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9520 reliable?

The price and inventory of IRF9520 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9520 is usually 5 days.

3.What payment methods are accepted for IRF9520?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9520 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9520?

IRF9520 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9520 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9520?

For technical support, including IRF9520 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9520 requirements.

6.How does Aetrix verify that IRF9520 is sourced from the original manufacturer or authorized distributors?

All IRF9520 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9520 meets industry standards.

7.What is the process for return or replacement of IRF9520?

All IRF9520 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9520, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9520 part is unused and in its original packaging.

Return procedure for IRF9520:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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