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Vishay Siliconix IRF9520STRLPBF
- Part No.:
- IRF9520STRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF9520STRLPBF.pdf
- Description:
- MOSFET P-CH 100V 6.8A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,368
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Product details
Overview
IRF9520STRLPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -100 V drain-source voltage, 0.60 Ω RDS(on) at VGS = -10 V, and -6.8 A continuous drain current at TC = 25 °C. It delivers ruggedized switching performance in high-side DC-DC converter and motor control applications requiring repetitive avalanche capability and fast turn-off.
For engineers reviewing the IRF9520STRLPBF datasheet, IRF9520STRLPBF pinout, IRF9520STRLPBF application, or IRF9520STRLPBF equivalent, key selection criteria include its -100 V blocking rating, 175 °C junction temperature limit, dynamic dV/dt immunity (-5.5 V/ns), low gate charge (18 nC), and D2PAK thermal performance (RthJC = 2.5 °C/W).
Technical Context
This device operates as a high-voltage, medium-current P-channel switch with intrinsic body diode conduction and unclamped inductive switching capability. Its gate threshold voltage range (-2.0 to -4.0 V) ensures reliable turn-on with standard logic-level drive, while its 9.0 nC Qgd and 25 ns fall time support efficient hard-switching up to ~100 kHz in synchronous buck or H-bridge topologies.
The MOSFET features third-generation silicon design optimized for low RDS(on) × Qg figure-of-merit, integrated avalanche energy rating (EAS = 300 mJ), and robust dV/dt immunity-enabling stable operation in noisy industrial environments without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Supports high-side switching in 48 V and 72 V DC bus systems with 20 % safety margin |
| RDS(on) @ VGS = -10 V | 0.60 Ω - Enables ≤ 27.8 W conduction loss at -6.8 A, suitable for thermally constrained PCB mounts |
| Qg | 18 nC - Allows full gate drive with ≤ 18 mA average current from 10 V supply at 100 kHz switching |
| ID (continuous, TC = 25 °C) | -6.8 A - Delivers 340 W max power dissipation in heatsinked D2PAK configuration |
| TJ max | +175 °C - Permits operation in under-hood automotive or enclosed industrial enclosures without derating |
| EAS | 300 mJ - Withstands single-pulse inductive energy from 9.7 mH loads at -6.8 A without failure |
| dV/dt rating | -5.5 V/ns - Resists false triggering during fast transients in motor phase-leg or SMPS output stages |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G–D–S layout per standard orientation); 14.61 mm × 10.16 mm footprint; 2.79 mm height; RoHS-compliant lead-free termination.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Accepts -10 V gate drive to fully enhance; 100 nA leakage ensures low static power in hold state |
| Drain (D) | High-side power input | Exposed metal tab - must be electrically connected to system ground or negative rail for thermal and EMI control |
| Source (S) | Power return / reference node | Provides common reference for gate drive; body diode anode enables reverse recovery in freewheeling paths |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 6.0 mJ per pulse - Enables reliable operation in inductive load switching without external clamping |
| Dynamic dV/dt immunity | -5.5 V/ns - Prevents spurious turn-on during high-slew-rate commutation in half-bridge configurations |
| Fast switching | 21 ns turn-off delay + 25 ns fall time - Reduces switching losses below 100 kHz in high-efficiency DC-DC converters |
| 175 °C operating temperature | Full parameter validity up to TJ = +175 °C - Eliminates thermal derating in sealed enclosures or high-ambient environments |
| Low Qgd/Qg ratio | 9.0/18 nC = 0.5 - Improves Miller immunity and enables stable gate drive with moderate-strength drivers |
Applications
| High-Side Load Switch | DC-DC Synchronous Buck Converter |
|---|---|
|
Use Scenario: Power sequencing and fault-isolation in 24–48 V industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-side P-channel switch controlling power delivery to downstream peripherals; operates in linear or saturated mode during enable/disable transitions. Use Value: -100 V rating accommodates 48 V nominal bus with surge margin; 0.60 Ω RDS(on) limits resistive drop to < 4.1 V at 6.8 A load. |
Use Scenario: Upper switch in non-isolated 12 V → 3.3 V synchronous buck regulator for FPGA core supplies. IC Role / Device Role / Timing Role: High-side P-MOSFET complementing N-channel low-side switch; driven with bootstrap or isolated gate driver. Use Value: 18 nC total gate charge enables clean 100 ns dead-time control; body diode trr = 98 ns minimizes shoot-through risk during transition. |
| H-Bridge Motor Driver | Reverse Polarity Protection |
|
Use Scenario: Bidirectional 24 V brushed DC motor control in automated gate actuators. IC Role / Device Role / Timing Role: One quadrant of dual high-side P-MOSFET H-bridge; paired with identical device for complementary switching. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation; -6.8 A continuous rating supports 150 W mechanical output. |
Use Scenario: Input protection for 12 V battery-powered instrumentation front-ends. IC Role / Device Role / Timing Role: Series-connected P-MOSFET acting as ideal diode replacement; gate tied to input via resistor divider. Use Value: 0.60 Ω RDS(on) yields < 8.2 mV drop at 13.7 mA standby current; eliminates 0.3–0.7 V forward voltage loss of Schottky solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530STRLPBF | -100 V VDS, 0.30 Ω RDS(on) @ -10 V, higher 12 A ID rating, larger die size | Higher conduction efficiency but requires larger PCB area and enhanced thermal management | Choose when lower RDS(on) justifies increased cost and thermal design complexity |
| SiHF9520STRL-GE3 | Identical silicon die and specs; halogen-free, lead-free construction per JEDEC J-STD-609A | No functional difference; preferred for RoHS-compliant and automotive-grade production | Specify SiHF9520STRL-GE3 for new designs targeting environmental compliance and long-term supply stability |
Compared with IRF9520STRLPBF, IRF9530STRLPBF offers 50 % lower on-resistance at the cost of higher gate charge (25 nC) and thermal resistance, while SiHF9520STRL-GE3 provides identical electrical performance with enhanced material compliance-making it the direct drop-in replacement for regulated markets.
Availability
IRF9520STRLPBF is available at Aetrix Electronics and suitable for high-side load switching, DC-DC converter upper switches, and reverse polarity protection circuits requiring stable component supply across industrial automation, transportation electronics, and embedded power systems.
Supply support for IRF9520STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.
The IRF9520STRLPBF belongs to Vishay's third-generation power MOSFET family, engineered for optimal balance of low on-resistance, fast switching, and rugged avalanche performance in surface-mount power conversion and control systems.
FAQ
What is the maximum continuous drain current for IRF9520STRLPBF at 100 °C case temperature?
The IRF9520STRLPBF supports -4.8 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be verified against actual board-level thermal resistance in the target application layout.
Does IRF9520STRLPBF have a built-in body diode, and what are its key parameters?
Yes, IRF9520STRLPBF integrates a source-drain body diode with VSD = -6.3 V at -6.8 A and TJ = 25 °C, reverse recovery time trr = 98 ns (typ.), and Qrr = 0.33 μC (typ.). These values are critical for freewheeling path design in buck converters and H-bridge motor drives where diode conduction occurs during dead time.
Can IRF9520STRLPBF be used with logic-level gate drive (e.g., 3.3 V or 5 V microcontroller outputs)?
No-IRF9520STRLPBF has a gate threshold voltage range of -2.0 V to -4.0 V and requires -10 V for full enhancement (RDS(on) = 0.60 Ω). Driving it with 3.3 V or 5 V will result in incomplete turn-on and excessive conduction loss; a dedicated gate driver or level-shifting circuit is required for logic-compatible operation.
What is the thermal resistance from junction to case (RthJC) for IRF9520STRLPBF, and how does it impact heatsink selection?
The IRF9520STRLPBF has a maximum RthJC of 2.5 °C/W, measured from junction to the exposed drain tab. This value enables precise heatsink sizing: for example, to maintain TJ ≤ 125 °C at 30 W dissipation with TC = 85 °C, the required heatsink-to-ambient resistance must be ≤ 1.33 °C/W, assuming negligible interface resistance.
Is IRF9520STRLPBF suitable for avalanche energy handling in unclamped inductive switching?
Yes-IRF9520STRLPBF is explicitly rated for repetitive avalanche (EAR = 6.0 mJ) and single-pulse avalanche (EAS = 300 mJ). These ratings validate its use in relay replacement, solenoid drivers, and motor phase-legs where inductive energy must be absorbed internally without external clamps-provided pulse width and duty cycle remain within datasheet limits.
IRF9520STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 390 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF9520STRLPBF FAQ
1.How can I place an order for IRF9520STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9520STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9520STRLPBF reliable?
The price and inventory of IRF9520STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9520STRLPBF is usually 5 days.
3.What payment methods are accepted for IRF9520STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9520STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9520STRLPBF?
IRF9520STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9520STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9520STRLPBF?
For technical support, including IRF9520STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9520STRLPBF requirements.
6.How does Aetrix verify that IRF9520STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRF9520STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9520STRLPBF meets industry standards.
7.What is the process for return or replacement of IRF9520STRLPBF?
All IRF9520STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9520STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9520STRLPBF part is unused and in its original packaging.
Return procedure for IRF9520STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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