Vishay Siliconix IRF9610SPBF

Overview

IRF9610SPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -200 V V_DS, 3 Ω R_DS(on) at V_GS = -10 V, and -1.8 A continuous drain current at T_C = 25 °C. It delivers fast switching, ruggedized design, and low gate charge (Q_g = 11 nC), making it suitable for high-voltage DC-DC converters and industrial power supplies.

For engineers reviewing the IRF9610SPBF datasheet, IRF9610SPBF pinout, IRF9610SPBF application, or IRF9610SPBF equivalent, key selection criteria include its -200 V blocking capability, body diode recovery time (t_rr = 240–360 ns), thermal resistance (R_thJC = 6.4 °C/W), and surface-mount D2PAK footprint compatibility with high-current PCB layouts.

Technical Context

This device operates as a high-side switch in off-line SMPS, motor control H-bridges, and battery protection circuits. Its P-channel topology eliminates need for bootstrap circuitry, while dynamic dV/dt rating (-5 V/ns) and built-in body diode support clamped inductive switching and reverse recovery under controlled conditions.

The MOSFET features third-generation silicon process with optimized cell layout for low R_DS(on) × Q_g figure of merit. Gate threshold voltage (V_GS(th) = -2 to -4 V) ensures reliable turn-on with standard -10 V gate drive, and internal source/drain inductances (L_S = 7.5 nH, L_D = 4.5 nH) are characterized for accurate switching waveform modeling.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-terminal configuration (Drain, Gate, Source) with standardized lead pitch (2.54 mm) and 10.67 mm × 9.65 mm footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Compared with IRF9610SPBF, SiHF9610S-GE3 offers identical electrical performance with enhanced environmental compliance, while IRF9540NPbF trades voltage capability and packaging efficiency for higher current handling in lower-voltage, through-hole designs.

Availability

IRF9610SPBF is available at Aetrix Electronics and suitable for industrial power supplies, telecom rectifiers, and motor control systems requiring stable component supply and long-term manufacturability.

Supply support for IRF9610SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and high-performance analog solutions.

The IRF9610SPBF belongs to Vishay's third-generation high-voltage P-channel MOSFET product line, engineered for ruggedness, low conduction loss, and fast switching in industrial and telecom power conversion.

FAQ

What is the maximum continuous drain current for IRF9610SPBF at 100 °C case temperature?

The IRF9610SPBF supports -1.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package without external heatsinking. At this temperature, conduction losses remain within safe junction limits assuming proper PCB copper area and ambient airflow. The IRF9610SPBF datasheet confirms this value under repetitive pulse conditions with junction temperature capped at 150 °C.

Does IRF9610SPBF have avalanche rating, and is it specified in the datasheet?

The IRF9610SPBF is not explicitly rated for repetitive avalanche energy (E_AS) in the provided datasheet. While its ruggedized third-generation silicon design withstands single-pulse avalanche per JEDEC JESD24-11, no guaranteed E_AS value is published. Designers must rely on SOA curves (Figure 4) and clamped inductive test data (Fig. 15–16) to validate robustness. For IRF9610SPBF, safe operation requires external snubbers or Zener clamping to limit V_DS overshoot during inductive switching.

Can IRF9610SPBF be used with logic-level gate drive (e.g., 3.3 V or 5 V)?

No-IRF9610SPBF is not a logic-level MOSFET. Its gate threshold voltage range is -2 V to -4 V, and R_DS(on) is specified only at V_GS = -10 V. At 3.3 V or 5 V gate drive, the device remains in weak inversion with R_DS(on) exceeding 10 Ω, causing excessive conduction loss and thermal runaway. The IRF9610SPBF requires a dedicated negative gate driver or level shifter to achieve full enhancement; it is incompatible with direct microcontroller GPIO drive.

What is the recommended PCB pad layout for IRF9610SPBF in D2PAK package?

Vishay specifies minimum recommended pads for IRF9610SPBF: 0.420" × 0.355" (10.67 mm × 9.02 mm) for the drain tab, with 0.145" (3.68 mm) clearance to adjacent copper. Thermal vias (≥6 × 0.3 mm diameter) should connect the drain pad to inner-layer ground planes. Gate and source pads follow standard 0.050" (1.27 mm) pitch SMT guidelines. These dimensions ensure solder joint reliability, thermal dissipation, and mechanical stability per IPC-7351B Class B standards for the IRF9610SPBF.

How does the body diode performance of IRF9610SPBF compare to Schottky alternatives?

The IRF9610SPBF body diode has V_SD = -5.8 V at -1.8 A and t_rr = 240–360 ns, resulting in higher forward loss and reverse recovery energy than Schottky diodes. Unlike Schottky devices, it conducts in both directions but lacks zero-recovery characteristics. In applications requiring low-loss freewheeling (e.g., synchronous rectification), an external Schottky or SiC diode is recommended alongside IRF9610SPBF. The IRF9610SPBF body diode is intended for fault protection and limited-duty-cycle commutation-not primary conduction.