Vishay Siliconix IRF9620

Overview

IRF9620 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -200 V drain-source voltage, 1.5 Ω R_DS(on) at V_GS = -10 V, and -3.5 A continuous drain current at T_C = 25 °C. It delivers fast switching, ruggedized dV/dt capability (-5.0 V/ns), and low gate charge (22 nC), making it suitable for DC-DC converters, motor control circuits, and high-side switching in industrial power supplies.

For engineers reviewing the IRF9620 datasheet, IRF9620 pinout, IRF9620 application, or IRF9620 equivalent, key selection criteria include verified P-channel polarity, confirmed -200 V V_DS rating, validated TO-220AB thermal resistance (R_thJC = 3.1 °C/W), and documented body diode recovery time (t_rr = 300–450 ns) under specified test conditions.

Technical Context

This device operates as a high-voltage P-channel switch with gate-threshold voltage V_GS(th) between -2.0 V and -4.0 V, enabling reliable turn-on with standard logic-level or dedicated gate drivers. Its dynamic parameters-Q_g = 22 nC, Q_gd = 10 nC, and C_iss = 350 pF-are optimized for controlled turn-on/turn-off transitions in hard-switched topologies.

The integral body diode supports synchronous rectification and clamped inductive load handling, with V_SD = -7.0 V at I_S = -3.5 A and t_rr = 300–450 ns at dI/dt = 100 A/μs. Thermal design relies on R_thJC = 3.1 °C/W and R_thJA ≤ 62 °C/W, requiring heatsinking for sustained >1 W dissipation.

Key Specifications

Pinout & Package

IRF9620 uses the industry-standard TO-220AB package with isolated tab (drain-connected). The package features low thermal resistance (R_thJC = 3.1 °C/W), flat mounting surface for thermal interface, and mechanical compatibility with standard TO-220 heatsinks and mounting hardware (6-32 or M3 screw, 10 lbf·in torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Compared with IRF9620, IRF9540N trades voltage headroom for lower conduction loss in low-voltage systems, while STP9NK60ZFP sacrifices switching speed and gate drive efficiency for ultra-high-voltage capability-neither offers direct pin-to-pin replacement, and layout adaptation is required for either alternative.

Availability

IRF9620 is available at Aetrix Electronics and suitable for industrial power supplies, DC motor controllers, LED drivers, and overvoltage protection circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRF9620 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and industrial-grade qualification.

The IRF9620 belongs to Vishay's third-generation power MOSFET family, engineered for commercial-industrial applications demanding ruggedness, fast switching, and cost-effective TO-220AB packaging up to ~50 W dissipation.

FAQ

What is the maximum continuous drain current for IRF9620 at 100 °C case temperature?

The IRF9620 supports -2.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures junction temperature remains within -55 to +150 °C range. At this condition, R_DS(on) increases to approximately 2.25 Ω due to positive temperature coefficient, raising conduction loss accordingly. Designers must verify heatsink sizing using R_thJC = 3.1 °C/W and ambient conditions.

Does IRF9620 have a built-in body diode, and what are its key parameters?

Yes, the IRF9620 integrates a source-drain body diode with V_SD = -7.0 V at I_S = -3.5 A and reverse recovery time t_rr = 300–450 ns at dI/dt = 100 A/μs. Q_rr is 1.9–2.9 μC, indicating moderate stored charge. This diode enables freewheeling in inductive loads without external components but requires careful dead-time management in bridge configurations to avoid cross-conduction. The diode is not rated for avalanche energy.

Is IRF9620 suitable for logic-level gate drive applications?

No, the IRF9620 is not a logic-level MOSFET. Its gate-threshold voltage V_GS(th) ranges from -2.0 V to -4.0 V, and full enhancement requires V_GS ≤ -10 V to achieve R_DS(on) = 1.5 Ω. Driving it with 3.3 V or 5 V logic outputs will result in high on-resistance (>10 Ω) and excessive heating. A dedicated gate driver capable of delivering -10 V to -15 V is required for optimal performance in the IRF9620.

What is the thermal resistance from junction to case (R_thJC) for IRF9620, and how is it measured?

The IRF9620 has a maximum junction-to-case thermal resistance R_thJC of 3.1 °C/W, measured from the silicon die to the TO-220AB drain tab surface under standardized test conditions (per JEDEC JESD51-1). This value assumes proper mounting with thermal grease on a flat, greased heatsink surface. Actual thermal performance depends on mounting pressure, interface material quality, and heatsink fin geometry. R_thJC is critical for calculating junction temperature rise: T_J = T_C + (P_D × R_thJC).

How does the IRF9620 handle repetitive dv/dt stress, and what is its rated peak diode recovery dv/dt?

The IRF9620 is rated for peak diode recovery dV/dt of -5.0 V/ns under specified test conditions (I_SD ≤ -3.5 A, dI/dt ≤ 95 A/μs, V_DD ≤ V_DS, T_J ≤ 150 °C). This parameter quantifies immunity to false turn-on during fast voltage transients across the drain-source terminals when the body diode is recovering. It is validated per JEDEC standards and confirms suitability for noisy industrial environments, though external snubbers may still be needed in high-dI/dt inductive switching.