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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9620S

Name: IRF9620S
Brand: Vishay Siliconix
SKU: IRF9620S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9620S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9620S.pdf

Description:: MOSFET P-CH 200V 3.5A D2PAK

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Product details

Overview

IRF9620S from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -200 V drain-source voltage, 1.5 Ω R_DS(on) at V_GS = -10 V, 3.5 A continuous drain current at T_C = 25 °C, and optimized for high-voltage DC-DC converters and industrial motor control circuits.

For engineers reviewing the IRF9620S datasheet, IRF9620S pinout, IRF9620S application, or IRF9620S equivalent, this device is selected for high-side switching in offline SMPS, reverse polarity protection, and ruggedized load switching where dV/dt immunity and body diode recovery performance are critical.

Technical Context

The IRF9620S uses planar vertical DMOS technology with optimized die geometry to achieve low on-resistance while maintaining high breakdown voltage and robust avalanche capability. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard -10 V gate drive and stable operation across temperature.

Thermal design is enabled by a low 3.1 °C/W junction-to-case thermal resistance and support for PCB-mount power dissipation up to 3.0 W. The device features a fast-recovery body diode with t_rr = 300–450 ns and Q_rr = 1.9–2.9 nC, enabling efficient hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Supports high-voltage bus isolation and flyback primary-side switching in 170–200 V AC-input systems.
R_DS(on)	1.5 Ω @ V_GS = -10 V - Enables <1.5 W conduction loss at 3.5 A, suitable for thermally constrained surface-mount designs.
Q_g	22 nC - Low gate charge allows fast switching with modest gate driver current (e.g., 1 A peak), reducing switching losses.
I_D (continuous)	-3.5 A @ T_C = 25 °C - Sustains full-rated current with minimal heatsinking when mounted on ≥1"² FR-4 PCB.
t_rr	300–450 ns - Limits reverse recovery energy and EMI in inductive switching applications like motor drives.
R_thJC	3.1 °C/W - Enables direct thermal coupling to heatsink via exposed drain pad, supporting >10 W steady-state dissipation with proper mounting.
P_D	40 W @ T_C = 25 °C - High power handling in compact D2PAK footprint, exceeding TO-220 alternatives in surface-mount density.

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on bottom side for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Mounting requires soldering the large drain tab to a dedicated copper pour for thermal management.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls channel conduction; requires -10 V for full enhancement; gate leakage ≤ ±100 nA ensures low standby power.
D	Drain terminal	High-voltage input node; electrically and thermally connected to exposed metal pad; must be routed with clearance for -200 V.
S	Source terminal	Reference node for gate drive; connects to load return or ground; body diode anode is internally tied to source.

Key Features

Feature	Design Value
Dynamic dV/dt rating	-5.0 V/ns - Immune to false triggering during fast voltage transients in high-noise industrial environments.
Fast switching	td(on) = 15 ns, tr = 25 ns - Reduces transition losses in 100–500 kHz SMPS designs without requiring active gate clamping.
Ease of paralleling	Positive R_DS(on) temperature coefficient - Ensures current sharing stability when multiple IRF9620S devices operate in parallel.
Simple drive requirements	V_GS(th) = -2.0 to -4.0 V - Compatible with standard logic-level gate drivers and microcontroller outputs with level-shifting.
Ruggedness	100% UIS tested - Withstands unclamped inductive switching stress up to I_LM = -14 A, eliminating need for external clamping diodes.

Applications

High-Voltage DC-DC Converters	Reverse Polarity Protection
Use Scenario: Isolated flyback or forward converter primary-side switch in telecom and industrial power supplies operating from 170–200 V AC rectified bus. IC Role / Device Role / Timing Role: High-side P-channel switch controlling energy transfer into transformer primary; operates in hard-switched PWM mode at 100–300 kHz. Use Value: -200 V V_DS rating and 1.5 Ω R_DS(on) enable >85% efficiency at 3.5 A output while maintaining safety margin over peak line voltage.	Use Scenario: Input protection circuit for battery-powered equipment or field-deployed sensors exposed to accidental reverse battery connection. IC Role / Device Role / Timing Role: Series-connected P-MOSFET acting as ideal diode replacement; conducts only when V_IN polarity is correct. Use Value: Low 1.5 Ω R_DS(on) limits voltage drop to <5.3 V at 3.5 A, minimizing power loss and heat generation versus Schottky solutions.
Industrial Motor Control	High-Side Load Switching
Use Scenario: Half-bridge high-side switch in brushed DC motor drivers for factory automation and HVAC actuators. IC Role / Device Role / Timing Role: Upper-leg switching element in H-bridge topology; commutates inductive motor current with body diode freewheeling. Use Value: 300–450 ns t_rr and 1.9–2.9 nC Q_rr reduce switching losses and EMI during direction reversal, improving system reliability.	Use Scenario: Power sequencing and fault-isolation switch for FPGA, DSP, or analog front-end subsystems in programmable logic controllers. IC Role / Device Role / Timing Role: Controlled high-side disconnect switch activated by microcontroller GPIO; provides soft-start and overcurrent shutdown. Use Value: -200 V rating supports 48 V and 110 V DC distribution buses; 3.5 A continuous rating covers typical module-level loads.

High-Voltage DC-DC Converters

Reverse Polarity Protection

Use Scenario: Isolated flyback or forward converter primary-side switch in telecom and industrial power supplies operating from 170–200 V AC rectified bus.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling energy transfer into transformer primary; operates in hard-switched PWM mode at 100–300 kHz.

Use Value: -200 V V_DS rating and 1.5 Ω R_DS(on) enable >85% efficiency at 3.5 A output while maintaining safety margin over peak line voltage.

Use Scenario: Input protection circuit for battery-powered equipment or field-deployed sensors exposed to accidental reverse battery connection.

IC Role / Device Role / Timing Role: Series-connected P-MOSFET acting as ideal diode replacement; conducts only when V_IN polarity is correct.

Use Value: Low 1.5 Ω R_DS(on) limits voltage drop to <5.3 V at 3.5 A, minimizing power loss and heat generation versus Schottky solutions.

Industrial Motor Control

High-Side Load Switching

Use Scenario: Half-bridge high-side switch in brushed DC motor drivers for factory automation and HVAC actuators.

IC Role / Device Role / Timing Role: Upper-leg switching element in H-bridge topology; commutates inductive motor current with body diode freewheeling.

Use Value: 300–450 ns t_rr and 1.9–2.9 nC Q_rr reduce switching losses and EMI during direction reversal, improving system reliability.

Use Scenario: Power sequencing and fault-isolation switch for FPGA, DSP, or analog front-end subsystems in programmable logic controllers.

IC Role / Device Role / Timing Role: Controlled high-side disconnect switch activated by microcontroller GPIO; provides soft-start and overcurrent shutdown.

Use Value: -200 V rating supports 48 V and 110 V DC distribution buses; 3.5 A continuous rating covers typical module-level loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF9620S-GE3	Identical silicon die and R_DS(on)/V_DS/Q_g specs; RoHS-compliant, halogen-free packaging vs. Pb-free only in IRF9620S.	No functional difference; preferred for new designs requiring full RoHS/halogen-free compliance.	Select SiHF9620S-GE3 for green manufacturing programs; IRF9620S remains valid for legacy Pb-free requirements.
IRF9540NPbF	Lower V_DS (-100 V), higher R_DS(on) (0.2 Ω), larger Q_g (71 nC); same D2PAK package but different die size and thermal performance.	Not suitable for >120 V applications; higher conduction loss and slower switching limit use to lower-power, lower-frequency systems.	Choose IRF9540NPbF only if voltage requirement is ≤100 V and cost is prioritized over efficiency and dV/dt immunity.

Compared with SiHF9620S-GE3, IRF9620S offers identical electrical performance but lacks halogen-free certification; compared with IRF9540NPbF, IRF9620S delivers twice the voltage rating and 3× lower gate charge-critical for high-frequency, high-reliability industrial switching.

Availability

IRF9620S is available at Aetrix Electronics and suitable for high-voltage DC-DC converters, reverse polarity protection circuits, and industrial motor control systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF9620S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRF9620S belongs to Vishay's high-voltage P-channel Power MOSFET product line, engineered for industrial power conversion, motor control, and protection applications demanding high dV/dt immunity and robust avalanche capability.

FAQ

What is the maximum continuous drain current rating for IRF9620S at 100 °C case temperature?

The IRF9620S supports -2.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be verified against actual PCB layout and ambient conditions in the final design.

Does IRF9620S have a built-in body diode, and what are its key recovery parameters?

Yes, IRF9620S integrates a parasitic p-n body diode between source and drain. Its key recovery parameters are t_rr = 300–450 ns and Q_rr = 1.9–2.9 nC at T_J = 25 °C, I_F = -3.5 A, and dI/dt = 100 A/μs. These values enable efficient freewheeling in half-bridge and synchronous rectifier topologies without external diode supplementation.

Can IRF9620S be used in surface-mount applications without a heatsink?

IRF9620S can operate without an external heatsink when dissipating ≤3.0 W on a 1"² FR-4 PCB, per its "Maximum Power Dissipation (PCB mount)" rating. For higher power levels, the exposed drain pad must be soldered to a thermal copper pour or attached to a heatsink using thermally conductive adhesive or screw mounting to maintain T_J ≤ 150 °C.

What is the gate threshold voltage range for IRF9620S, and how does it affect drive compatibility?

The IRF9620S has a gate threshold voltage range of -2.0 V to -4.0 V at I_D = -250 μA. This ensures reliable turn-on with standard -10 V gate drive while avoiding unintended conduction from noise or leakage currents. It is not logic-level compatible with 3.3 V or 5 V microcontrollers without level shifting.

Is IRF9620S suitable for avalanche energy handling in inductive switching applications?

Yes, IRF9620S is 100% tested for Unclamped Inductive Switching (UIS) with I_LM = -14 A, confirming its ability to absorb inductive energy without failure. This ruggedness eliminates the need for external snubber networks in relay drivers, solenoid controls, and other highly inductive load switching applications using IRF9620S.

IRF9620S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9620S FAQ

1.How can I place an order for IRF9620S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9620S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9620S reliable?

The price and inventory of IRF9620S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9620S is usually 5 days.

3.What payment methods are accepted for IRF9620S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9620S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9620S?

IRF9620S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9620S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9620S?

For technical support, including IRF9620S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9620S requirements.

6.How does Aetrix verify that IRF9620S is sourced from the original manufacturer or authorized distributors?

All IRF9620S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9620S meets industry standards.

7.What is the process for return or replacement of IRF9620S?

All IRF9620S units undergo pre-shipment inspection (PSI). If there is an issue with IRF9620S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9620S part is unused and in its original packaging.

Return procedure for IRF9620S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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