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Vishay Siliconix IRF9620STRLPBF
- Part No.:
- IRF9620STRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF9620STRLPBF.pdf
- Description:
- MOSFET P-CH 200V 3.5A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,598
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Product details
Overview
IRF9620STRLPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -200 V drain-source voltage, 1.5 Ω RDS(on) at VGS = -10 V, and -3.5 A continuous drain current at TC = 25 °C. It serves as a high-voltage, medium-current switching element in DC-DC converters, motor control H-bridges, and industrial power supplies.
For engineers reviewing the IRF9620STRLPBF datasheet, IRF9620STRLPBF pinout, IRF9620STRLPBF application, or IRF9620STRLPBF equivalent, key selection criteria include its -200 V blocking capability, 22 nC total gate charge, body diode reverse recovery time of 300–450 ns, thermal resistance of 3.1 °C/W junction-to-case, and suitability for clamped inductive switching with dV/dt rating of -5.0 V/ns.
Technical Context
This device employs planar vertical DMOS technology optimized for ruggedness and low on-resistance in high-voltage P-channel configurations. Its gate threshold voltage range (-2.0 to -4.0 V) ensures reliable turn-on with standard logic-level negative gate drive, while the 12 nC gate-source charge supports fast switching with moderate gate driver strength.
The integrated body diode exhibits VSD = -7.0 V at -3.5 A and 25 °C, with Qrr = 1.9–2.9 nC and trr = 300–450 ns under specified test conditions. Thermal design is enabled by a low RthJC of 3.1 °C/W and PCB-mount RthJA of 40 °C/W, supporting up to 40 W dissipation at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - Supports high-side switching in 100–200 V DC bus applications without avalanche stress |
| RDS(on) @ VGS = -10 V | 1.5 Ω - Enables <1.5 W conduction loss at -3.5 A, suitable for medium-power SMPS |
| Qg | 22 nC - Requires ~2.2 mA average gate current for 10 kHz switching with 10 V swing |
| ID (continuous, TC = 25 °C) | -3.5 A - Sufficient for load switches and half-bridge legs up to ~70 W output |
| trr (body diode) | 300–450 ns - Limits switching losses during synchronous rectification or freewheeling |
| RthJC | 3.1 °C/W - Allows direct heatsink mounting for thermal management in compact layouts |
| VGS(th) | -2.0 to -4.0 V - Ensures full enhancement with -5 V logic-level gate drive, avoiding partial turn-on |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (Drain, Gate, Source), lead (Pb)-free and halogen-free construction per JEDEC TO-263AB outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Electrically and thermally connected to package backside; must be soldered to large copper area or heatsink |
| Gate | Control input for channel modulation | High-impedance terminal requiring <±100 nA leakage handling; sensitive to ESD and ringing |
| Source | Reference node for gate drive and current return | Common connection point for load return path and gate drive reference; defines VGS potential |
Key Features
| Feature | Design Value |
|---|---|
| P-channel enhancement mode | Enables high-side switching without level-shifting circuitry in negative-rail or floating-bus topologies |
| Dynamic dV/dt rating (-5.0 V/ns) | Prevents false turn-on during fast voltage transients in inductive loads or bridge circuits |
| Ease of paralleling | Positive temperature coefficient of RDS(on) enables stable current sharing across multiple devices |
| Fast switching (td(on) = 15 ns, tf = 15 ns) | Reduces transition losses in PWM frequencies up to 500 kHz with appropriate gate drive |
| Low gate charge (Qgs = 12 nC, Qgd = 10 nC) | Minimizes driver power consumption and simplifies gate resistor selection for rise/fall control |
Applications
| Industrial Motor Control | DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Bidirectional H-bridge driving 24–48 V brushed DC motors in PLC I/O modules. IC Role / Device Role / Timing Role: P-channel high-side switch controlling motor voltage polarity and enabling regenerative braking via body diode conduction. Use Value: -200 V rating accommodates back-EMF spikes; 3.5 A continuous current supports >100 W mechanical output; dV/dt immunity prevents shoot-through during direction reversal. |
Use Scenario: Non-isolated buck converter stepping down 100 V DC input to 24 V for industrial sensors. IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 200 kHz. Use Value: 1.5 Ω RDS(on) cuts conduction loss by >60% vs. 40 V Schottky; body diode trr < 450 ns avoids hard-switching penalties during dead-time. |
| Telecom Power Supply OR-ing | AC-DC Front-End Protection |
Use Scenario: Redundant 48 V DC power inputs in telecom shelf systems using ideal diode controllers. IC Role / Device Role / Timing Role: Low-loss reverse-polarity protection and current steering element controlled by external gate driver IC. Use Value: -200 V VDS withstands line surges per GR-1089; 22 nC Qg allows fast turn-off during fault detection (<1 μs response). |
Use Scenario: Input stage overvoltage clamp and surge suppression in 230 V AC-DC adapters. IC Role / Device Role / Timing Role: Active crowbar switch triggered by transient voltage detector to short AC line during overvoltage events. Use Value: 40 W PD rating sustains 100 ms surge pulses; rugged SOA supports repetitive clamping without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHF9620STRL-GE3 | Same die, identical RDS(on), Qg, and VDS; RoHS-compliant, halogen-free, and Pb-free terminations | No functional difference; preferred where environmental compliance is mandatory | Select SiHF9620STRL-GE3 for new designs requiring full RoHS/halogen-free certification. |
| IRF9530NPBF | Lower VDS (-100 V), higher RDS(on) (0.3 Ω), larger Qg (60 nC); TO-220 package | Not suitable for >120 V systems; requires heatsink mounting and cannot match IRF9620STRLPBF's surface-mount density | Choose IRF9530NPBF only if board space permits through-hole assembly and voltage requirements are ≤100 V. |
Compared with SiHF9620STRL-GE3, IRF9620STRLPBF offers identical electrical performance but lacks halogen-free certification; versus IRF9530NPBF, it delivers double the voltage rating and 3× lower gate charge in a surface-mount package-enabling higher-density, higher-reliability designs in 100–200 V applications.
Availability
IRF9620STRLPBF is available at Aetrix Electronics and suitable for industrial motor control, telecom power OR-ing, DC-DC converter high-side switching, and AC-DC front-end protection requiring stable component supply and long-term production continuity.
Supply support for IRF9620STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRF9620S family targets high-voltage P-channel switching in industrial, telecom, and power conversion systems where robustness, low RDS(on), and dynamic dV/dt immunity are critical.
FAQ
What is the maximum continuous drain current for IRF9620STRLPBF at 100 °C case temperature?
The IRF9620STRLPBF supports -2.0 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the SOA boundary when mounted on a heatsink or thermally enhanced PCB.
Does IRF9620STRLPBF have a built-in body diode, and what are its key parameters?
Yes, IRF9620STRLPBF integrates a source-drain body diode with VSD = -7.0 V at -3.5 A and 25 °C, reverse recovery time trr = 300–450 ns, and Qrr = 1.9–2.9 nC. These values are measured under standardized conditions (TJ = 25 °C, IF = -3.5 A, dI/dt = 100 A/μs) and define its freewheeling capability in inductive switching applications.
Can IRF9620STRLPBF be used in avalanche mode, and is it rated for repetitive avalanche energy?
No, the IRF9620STRLPBF datasheet does not specify repetitive avalanche energy (EAS) or single-pulse avalanche ratings. It is designed for clamped inductive switching only, with peak diode recovery dV/dt limited to -5.0 V/ns. Operation beyond VDS = -200 V is not guaranteed and may cause permanent damage.
What is the gate threshold voltage range for IRF9620STRLPBF, and how does it affect drive requirements?
The gate threshold voltage VGS(th) for IRF9620STRLPBF is -2.0 V to -4.0 V at ID = -250 μA. This range ensures full enhancement with -5 V gate drive while maintaining noise margin against spurious turn-on. Drive circuits must deliver sufficient negative voltage swing and current to overcome 22 nC total gate charge within required switching times.
Is IRF9620STRLPBF compatible with standard D2PAK footprint and reflow profiles?
Yes, IRF9620STRLPBF uses the JEDEC-standard TO-263AB (D2PAK) outline with documented pad dimensions (e.g., 0.420" × 0.355" recommended minimum pads). It supports standard lead-free reflow profiles per IPC/JEDEC J-STD-020, with peak temperature up to 260 °C for 10 seconds, as confirmed by Vishay's packaging documentation.
IRF9620STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 40W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF9620STRLPBF FAQ
1.How can I place an order for IRF9620STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9620STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9620STRLPBF reliable?
The price and inventory of IRF9620STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9620STRLPBF is usually 5 days.
3.What payment methods are accepted for IRF9620STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9620STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9620STRLPBF?
IRF9620STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9620STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9620STRLPBF?
For technical support, including IRF9620STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9620STRLPBF requirements.
6.How does Aetrix verify that IRF9620STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRF9620STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9620STRLPBF meets industry standards.
7.What is the process for return or replacement of IRF9620STRLPBF?
All IRF9620STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9620STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9620STRLPBF part is unused and in its original packaging.
Return procedure for IRF9620STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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