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Vishay Siliconix IRF9630SPBF
- Part No.:
- IRF9630SPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF9630SPBF.pdf
- Description:
- MOSFET P-CH 200V 6.5A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,550
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Product details
Overview
IRF9630SPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -200 V VDS, 0.80 Ω RDS(on) at VGS = -10 V, and -6.5 A continuous drain current at TC = 25 °C. It delivers ruggedized switching performance in high-voltage DC-DC converters and motor control circuits requiring reverse polarity protection.
For engineers reviewing the IRF9630SPBF datasheet, IRF9630SPBF pinout, IRF9630SPBF application, or IRF9630SPBF equivalent, key selection criteria include its -200 V blocking capability, repetitive avalanche rating (7.4 mJ), fast turn-off delay (28 ns), low gate charge (29 nC), and suitability for surface-mount high-current switching where thermal management via PCB copper area is critical.
Technical Context
This device belongs to Vishay's third-generation power MOSFET family optimized for high-voltage P-channel switching. Its design integrates a HEX-4 die in D2PAK, enabling low RDS(on) while maintaining robust avalanche energy handling (EAS = 500 mJ single-pulse) and dV/dt immunity (-5.0 V/ns).
The IRF9630SPBF features a negative gate threshold voltage (-2.0 to -4.0 V), intrinsic body diode with 200–300 ns reverse recovery time, and gate input resistance of 0.6–3.7 Ω - all supporting stable operation in hard-switched topologies without external gate clamping under typical drive conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - supports high-side switching in 100–200 V DC bus systems without derating |
| RDS(on) @ VGS = -10 V | 0.80 Ω - enables ≤ 34 W conduction loss at -6.5 A, suitable for medium-power SMPS |
| Qg | 29 nC - determines gate drive power requirement; compatible with standard ±12 V gate drivers |
| ID (continuous, TC = 25 °C) | -6.5 A - defines maximum steady-state load current when mounted on heatsink or large copper area |
| EAR | 7.4 mJ - specifies safe repetitive avalanche energy per pulse, critical for inductive load snubbing |
| TJ range | -55 to +150 °C - ensures operation across industrial ambient and self-heating conditions |
| RthJC | 1.7 °C/W - indicates thermal path efficiency from junction to case; requires low-thermal-resistance mounting |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Mounting requires ≥1"² FR-4 PCB copper area for 3.0 W dissipation in PCB-mount mode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; accepts -10 V to -20 V for full enhancement; threshold -2.0 to -4.0 V |
| D | Drain | Main high-voltage power terminal; electrically and thermally connected to exposed backside metal pad |
| S | Source | Reference node for gate drive and load return; tied to system ground in high-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation in inductive switching without external snubbers (EAR = 7.4 mJ) |
| Dynamic dV/dt rating | -5.0 V/ns immunity prevents false turn-on during high-speed voltage transients |
| Fast switching | 28 ns turn-off delay + 24 ns fall time supports >100 kHz PWM in buck or linear regulators |
| Surface mount (D2PAK) | Eliminates through-hole assembly; allows automated reflow and high-power density layout |
| Low RDS(on) / die size ratio | 0.80 Ω achieved with HEX-4 die in D2PAK - best-in-class on-resistance for -200 V P-channel |
Applications
| High-Voltage DC-DC Converter | Industrial Motor Control |
|---|---|
|
Use Scenario: Isolated flyback or forward converter operating from 100–200 V DC input bus. IC Role / Device Role / Timing Role: Primary-side P-channel high-side switch controlling energy transfer into transformer. Use Value: -200 V VDS rating eliminates need for series stacking; 0.80 Ω RDS(on) reduces conduction loss at 6.5 A peak current. |
Use Scenario: H-bridge or half-bridge driver for 24–48 V brushed DC motors in factory automation. IC Role / Device Role / Timing Role: High-side P-channel switch providing reverse-polarity protection and direction control. Use Value: Repetitive avalanche rating handles inductive kickback during PWM commutation without external clamp diodes. |
| Power Supply OR-ing | LED Driver Protection |
|
Use Scenario: Redundant 48 V telecom power supply with automatic failover between sources. IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode replacement in OR-ing circuit. Use Value: Low RDS(on) cuts forward drop vs. Schottky diode, improving efficiency by >2% at 5 A load. |
Use Scenario: Constant-current LED string driver with overvoltage and short-circuit protection. IC Role / Device Role / Timing Role: High-side current-limiting switch activated during fault detection. Use Value: Fast 28 ns turn-off delay ensures sub-microsecond response to overcurrent events, protecting LEDs and driver ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHF9630STRL-GE3 | Same die and specs; lead-free, halogen-free, tape-and-reel packaging; RoHS-compliant | No functional difference; preferred for new designs requiring environmental compliance | Select SiHF9630STRL-GE3 for volume production with RoHS/REACH requirements |
| IRF9540NPbF | Lower VDS (-100 V), higher RDS(on) (0.200 Ω), same D2PAK package and pinout | Not suitable for 200 V systems; limited to ≤100 V bus applications | Choose IRF9540NPbF only if voltage stress is <100 V and lower on-resistance is prioritized |
Compared with IRF9630SPBF, SiHF9630STRL-GE3 offers identical electrical performance with enhanced environmental compliance, while IRF9540NPbF trades voltage rating for lower on-resistance - making IRF9630SPBF the sole option for -200 V P-channel switching in D2PAK.
Availability
IRF9630SPBF is available at Aetrix Electronics and suitable for high-voltage DC-DC converters, industrial motor control circuits, and redundant power OR-ing applications requiring stable component supply and long-term industrial availability.
Supply support for IRF9630SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF9630SPBF belongs to Vishay's third-generation power MOSFET product line, engineered specifically for high-voltage P-channel switching in space-constrained, thermally demanding applications such as telecom power supplies and motor drives.
FAQ
What is the maximum continuous drain current for IRF9630SPBF at 100 °C case temperature?
The IRF9630SPBF supports -4.0 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be validated against actual board layout and airflow. The IRF9630SPBF maintains safe operation up to 150 °C junction temperature, but sustained current above -4.0 A at 100 °C case requires active cooling or reduced duty cycle.
Does IRF9630SPBF have a built-in body diode, and what are its key parameters?
Yes, the IRF9630SPBF integrates a parasitic body diode inherent to its vertical P-channel MOSFET structure. Key parameters include -6.5 A continuous source-drain current, -26 A pulsed rating, -6.5 V forward voltage at -6.5 A and 25 °C, and 200–300 ns reverse recovery time (trr) with 1.9–2.9 μC recovered charge (Qrr). These values are confirmed in the "Drain-Source Body Diode Characteristics" section of the datasheet and directly impact performance in freewheeling and synchronous rectification roles.
Can IRF9630SPBF be used in avalanche mode, and what is its rated energy?
Yes, the IRF9630SPBF is explicitly rated for repetitive avalanche operation with EAR = 7.4 mJ per pulse and single-pulse EAS = 500 mJ. These values are measured under defined test conditions (VDD = -50 V, IAS = -6.5 A, TJ = 25 °C) and allow controlled inductive energy dissipation without device failure. The IRF9630SPBF's avalanche capability eliminates need for external snubbers in many relay-driving or solenoid-control applications.
What is the gate threshold voltage range for IRF9630SPBF, and how does it affect drive requirements?
The IRF9630SPBF has a gate-source threshold voltage (VGS(th)) range of -2.0 V to -4.0 V at ID = -250 μA, meaning it begins conducting significantly below -4.0 V and is fully enhanced near -10 V. This requires negative gate drive relative to source, typically -10 V to -15 V for low RDS(on). The IRF9630SPBF is not logic-level compatible; driving it from 3.3 V or 5 V microcontrollers requires level-shifting or dedicated high-side gate drivers.
Is IRF9630SPBF RoHS-compliant, and what does the 'PbF' suffix indicate?
Yes, IRF9630SPBF is lead-free ("PbF") and RoHS-compliant per Directive 2011/65/EU. The 'PbF' suffix denotes lead-free terminations and halogen-free molding compound, verified in Vishay's material declarations. Unlike earlier Pb-containing variants, the IRF9630SPBF meets JEDEC JS709A halogen-free standards and is qualified for reflow soldering per J-STD-020 with peak temperature up to 300 °C for 10 seconds.
IRF9630SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF9630SPBF FAQ
1.How can I place an order for IRF9630SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9630SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9630SPBF reliable?
The price and inventory of IRF9630SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9630SPBF is usually 5 days.
3.What payment methods are accepted for IRF9630SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9630SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9630SPBF?
IRF9630SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9630SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9630SPBF?
For technical support, including IRF9630SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9630SPBF requirements.
6.How does Aetrix verify that IRF9630SPBF is sourced from the original manufacturer or authorized distributors?
All IRF9630SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9630SPBF meets industry standards.
7.What is the process for return or replacement of IRF9630SPBF?
All IRF9630SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9630SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9630SPBF part is unused and in its original packaging.
Return procedure for IRF9630SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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