Vishay Siliconix IRF9640LPBF

Overview

IRF9640LPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-262 (I2PAK) package, rated for -200 V drain-source voltage, 0.50 Ω R_DS(on) at V_GS = -10 V, and -11 A continuous drain current at T_C = 25 °C. It delivers rugged repetitive avalanche capability (E_AR = 13 mJ), fast switching (t_d(off) = 39 ns), and is optimized for high-voltage DC-DC converters and motor control circuits.

For engineers reviewing the IRF9640LPBF datasheet, IRF9640LPBF pinout, IRF9640LPBF application, or IRF9640LPBF equivalent, key selection criteria include its -200 V blocking rating, low gate charge (Q_g = 44 nC), body diode reverse recovery time (t_rr = 250–300 ns), thermal resistance (R_thJC = 1.0 °C/W), and through-hole I2PAK mounting suitability for high-power industrial designs.

Technical Context

This P-channel MOSFET uses planar vertical DMOS technology with optimized cell layout for low R_DS(on) and controlled dV/dt immunity. Its gate threshold voltage range (-2.0 to -4.0 V) ensures reliable turn-on with standard logic-level gate drivers while maintaining noise immunity.

The device integrates a fast, low-loss intrinsic body diode (V_SD = -5.0 V at -11 A, t_rr = 250–300 ns) and supports unclamped inductive switching with validated avalanche energy ratings (E_AS = 700 mJ single-pulse, E_AR = 13 mJ repetitive). Thermal design leverages direct die-to-case conduction via the exposed drain tab.

Key Specifications

Pinout & Package

IRF9640LPBF uses the I2PAK (TO-262) through-hole package with an isolated mounting tab (drain-connected). The package features a thermally enhanced copper leadframe and internal wirebond construction optimized for high-current pulse handling and mechanical robustness in industrial environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power switching applications.

Compared with IRF9640LPBF, IRF9540NPbF offers lower R_DS(on) but halves the voltage rating and doubles gate charge, while STP9PF10 trades voltage headroom and avalanche robustness for compact size and faster switching-making IRF9640LPBF the only option supporting 200 V systems with validated repetitive avalanche endurance.

Availability

IRF9640LPBF is available at Aetrix Electronics and suitable for industrial motor drives, high-voltage DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRF9640LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRF9640LPBF belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered for demanding industrial power conversion where voltage margin, avalanche survivability, and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for IRF9640LPBF at 100 °C case temperature?

The IRF9640LPBF has a continuous drain current rating of -6.8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the I2PAK package under sustained high-temperature operation and must be applied when ambient or heatsink conditions elevate case temperature beyond 25 °C. Designers should verify junction temperature using R_thJC = 1.0 °C/W and actual power dissipation to ensure T_J ≤ 150 °C.

Does IRF9640LPBF support gate drive from standard 5 V microcontrollers?

No, IRF9640LPBF is not a logic-level MOSFET. Its gate threshold voltage range is -2.0 V to -4.0 V, but full enhancement requires V_GS ≤ -10 V to achieve the specified R_DS(on) of 0.50 Ω. A 5 V microcontroller cannot provide sufficient negative gate drive; a dedicated negative gate driver or level-shifting circuit generating -10 V to -15 V relative to source is required for optimal performance of IRF9640LPBF.

What is the body diode reverse recovery charge (Q_rr) for IRF9640LPBF?

The body diode reverse recovery charge for IRF9640LPBF is 2.9–3.6 μC, measured at T_J = 25 °C, I_F = -11 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in freewheeling and synchronous rectification applications. Designers must account for Q_rr when selecting gate drivers and calculating total switching energy in topologies where the body diode conducts, such as half-bridge configurations using IRF9640LPBF.

Is IRF9640LPBF suitable for avalanche energy handling in unclamped inductive switching?

Yes, IRF9640LPBF is explicitly rated for repetitive avalanche operation with E_AR = 13 mJ and single-pulse avalanche energy E_AS = 700 mJ. These values are validated per test conditions in the datasheet (V_DD = -50 V, I_AS = -11 A, T_J initial = 25 °C). For reliable use in unclamped inductive switching, designers must limit pulse width and duty cycle per Figure 11 and ensure peak junction temperature remains within -55 to +150 °C.

What is the thermal resistance from junction to case (R_thJC) for IRF9640LPBF?

The maximum junction-to-case thermal resistance (R_thJC) for IRF9640LPBF is 1.0 °C/W, as stated in the Thermal Resistance Ratings table. This value applies to conduction from the silicon die to the drain tab (case) and is critical for heatsink sizing. When mounted with proper thermal interface material and mechanical pressure, this low R_thJC enables IRF9640LPBF to dissipate up to 125 W at T_C = 25 °C before reaching its 150 °C maximum junction temperature.