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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9640S

Name: IRF9640S
Brand: Vishay Siliconix
SKU: IRF9640S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9640S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9640S.pdf

Description:: MOSFET P-CH 200V 11A D2PAK

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Product details

Overview

IRF9640S from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -200 V drain-source voltage, 0.50 Ω R_DS(on) at V_GS = -10 V, and -11 A continuous drain current at T_C = 25 °C. It delivers fast switching, repetitive avalanche capability, and ruggedized design for high-voltage DC-DC converters and motor control circuits.

For engineers reviewing the IRF9640S datasheet, IRF9640S pinout, IRF9640S application, or IRF9640S equivalent, key selection criteria include its -200 V blocking rating, -11 A thermal-limited current, dV/dt immunity of -5.0 V/ns, body diode reverse recovery time of 250–300 ns, and compatibility with standard gate drivers requiring -10 V turn-on.

Technical Context

This device operates as a high-side switch in P-channel configuration, leveraging negative gate drive to control high-voltage loads without level-shifting circuitry. Its -200 V V_DS rating and -11 A I_D support industrial off-line power supplies and battery-powered systems where polarity inversion is required.

The IRF9640S features low gate charge (Q_g = 44 nC), split into Q_gs = 7.1 nC and Q_gd = 27 nC, enabling efficient switching at moderate frequencies. Its dynamic dV/dt rating (-5.0 V/ns) and unclamped inductive switching capability (E_AS = 700 mJ) confirm robustness against voltage transients in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Supports high-voltage DC bus isolation up to 200 V in P-channel high-side configurations
R_DS(on)	0.50 Ω @ V_GS = -10 V - Enables <1.2 W conduction loss at -11 A, suitable for thermally constrained PCB mounts
I_D (continuous)	-11 A @ T_C = 25 °C - Delivers full-rated current with heatsink; derates linearly to -6.8 A at 100 °C case temperature
Q_g	44 nC - Requires ~0.44 mC total gate charge per switching cycle at 10 kHz, defining driver strength requirement
E_AS	700 mJ - Withstands single-pulse inductive energy events without failure, critical for relay/snubberless designs
t_rr	250–300 ns - Limits body diode reverse recovery losses in synchronous rectification or freewheeling paths
R_thJC	1.0 °C/W - Allows direct thermal path to heatsink; enables >100 W dissipation with modest thermal interface resistance

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad on bottom for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Mounting requires solderable copper area per Vishay recommended pad layout (0.420" × 0.355").

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts -10 V for full enhancement; threshold range -2.0 to -4.0 V defines logic-level compatibility
D	Drain	Main high-voltage terminal; electrically and thermally connected to exposed backside metal pad
S	Source	Reference node for gate drive; tied to load return or system ground in high-side switch applications

Key Features

Feature	Design Value
P-Channel enhancement mode	Enables high-side switching without bootstrap or isolated gate drive; simplifies power stage layout in buck regulators
Repetitive avalanche rated	Withstands repeated inductive switching stress (EAR = 13 mJ), improving reliability in motor drive flyback phases
Dynamic dV/dt immunity	-5.0 V/ns rating prevents false turn-on during rapid voltage transients across drain-source
Halogen-free & RoHS-compliant	Meets JEDEC JS709A and Directive 2011/65/EU requirements for environmentally regulated end equipment
Fast switching with low Q_gd/Q_g ratio	Q_gd = 27 nC / Q_g = 44 nC = 61% - Indicates strong Miller effect control, supporting stable hard-switching

Applications

Industrial Power Supplies	DC Motor Control
Use Scenario: High-voltage input AC-DC front-end or isolated DC-DC converter with active OR-ing or hot-swap protection. IC Role / Device Role / Timing Role: P-channel high-side switch controlling main power rail sequencing and fault isolation. Use Value: -200 V V_DS withstands 170 V RMS line peaks plus surge margin; R_DS(on) = 0.50 Ω limits conduction loss to <60 W at full load.	Use Scenario: Bidirectional brushed DC motor H-bridge upper quadrant or single-quadrant speed controller. IC Role / Device Role / Timing Role: High-side power switch enabling PWM-controlled current flow into motor windings. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time; t_rr = 250–300 ns minimizes diode conduction loss during commutation.
Battery Management Systems	Telecom Power Distribution
Use Scenario: Reverse polarity protection and load disconnect in 48 V telecom or EV auxiliary battery systems. IC Role / Device Role / Timing Role: Always-on series protection switch placed between battery and downstream DC-DC stages. Use Value: Low R_DS(on) ensures <0.5 V drop at 10 A, preserving battery runtime; -55 to +150 °C T_J range supports wide ambient operation.	Use Scenario: Hot-swap controller or redundant power OR-ing in 48 V distributed power architecture (DPA). IC Role / Device Role / Timing Role: Controlled turn-on switch managing inrush current and fault isolation between parallel power feeds. Use Value: Fast turn-on delay (t_d(on) = 14 ns) and rise time (t_r = 43 ns) enable precise timing control; E_AS = 700 mJ handles capacitor charging surges.

Industrial Power Supplies

DC Motor Control

Use Scenario: High-voltage input AC-DC front-end or isolated DC-DC converter with active OR-ing or hot-swap protection.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling main power rail sequencing and fault isolation.

Use Value: -200 V V_DS withstands 170 V RMS line peaks plus surge margin; R_DS(on) = 0.50 Ω limits conduction loss to <60 W at full load.

Use Scenario: Bidirectional brushed DC motor H-bridge upper quadrant or single-quadrant speed controller.

IC Role / Device Role / Timing Role: High-side power switch enabling PWM-controlled current flow into motor windings.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time; t_rr = 250–300 ns minimizes diode conduction loss during commutation.

Battery Management Systems

Telecom Power Distribution

Use Scenario: Reverse polarity protection and load disconnect in 48 V telecom or EV auxiliary battery systems.

IC Role / Device Role / Timing Role: Always-on series protection switch placed between battery and downstream DC-DC stages.

Use Value: Low R_DS(on) ensures <0.5 V drop at 10 A, preserving battery runtime; -55 to +150 °C T_J range supports wide ambient operation.

Use Scenario: Hot-swap controller or redundant power OR-ing in 48 V distributed power architecture (DPA).

IC Role / Device Role / Timing Role: Controlled turn-on switch managing inrush current and fault isolation between parallel power feeds.

Use Value: Fast turn-on delay (t_d(on) = 14 ns) and rise time (t_r = 43 ns) enable precise timing control; E_AS = 700 mJ handles capacitor charging surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	-100 V V_DS, 0.20 Ω R_DS(on), lower voltage rating and higher current density but insufficient for 200 V systems	Not suitable for 170 V AC-derived rails; limited to ≤100 V DC applications like 24 V industrial controls	Select only when system V_DS max ≤ 100 V and lower on-resistance is prioritized over voltage headroom
STP20PF06	-60 V V_DS, 0.055 Ω R_DS(on), significantly lower voltage rating and optimized for low-voltage automotive loads	Designed for 12–42 V battery systems; lacks avalanche rating and dV/dt immunity needed in industrial power	Use exclusively in automotive body electronics or low-voltage DC distribution where -60 V rating is sufficient

Compared with IRF9640S, IRF9540NPbF offers lower R_DS(on) but fails at 200 V stress, while STP20PF06 provides superior efficiency below 60 V yet cannot replace IRF9640S in high-voltage industrial or telecom power stages without redesign.

Availability

IRF9640S is available at Aetrix Electronics and suitable for industrial power supplies, DC motor control, battery management systems, and telecom power distribution requiring stable component supply and long-term manufacturability.

Supply support for IRF9640S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete power devices, precision resistors, and optoelectronics, with emphasis on reliability and performance in harsh environments.

The IRF9640S belongs to Vishay's third-generation Power MOSFET family, engineered for high-voltage P-channel switching in industrial and telecom infrastructure where ruggedness, avalanche tolerance, and surface-mount thermal performance are critical.

FAQ

What is the maximum junction temperature rating for the IRF9640S?

The IRF9640S has an operating junction and storage temperature range of -55 °C to +150 °C. This allows reliable operation in high-ambient environments such as enclosed industrial enclosures or under-hood automotive modules. The device's thermal resistance R_thJC = 1.0 °C/W enables effective heat transfer to external heatsinks, ensuring the IRF9640S remains within safe limits even at full 125 W power dissipation when properly mounted.

Does the IRF9640S support logic-level gate drive?

No, the IRF9640S is not a logic-level MOSFET. Its gate-threshold voltage V_GS(th) ranges from -2.0 V to -4.0 V, and it requires -10 V gate-source voltage to achieve its specified R_DS(on) of 0.50 Ω. Driving the IRF9640S with only 3.3 V or 5 V logic signals will result in incomplete enhancement and excessive conduction loss. A dedicated negative gate driver or level-shifting circuit is required for proper operation of the IRF9640S in most applications.

Can the IRF9640S be used in parallel configurations?

Yes, the IRF9640S is explicitly designed for ease of paralleling, as noted in its official Vishay documentation. Its positive temperature coefficient for R_DS(on) (confirmed by normalized on-resistance vs. temperature curves) promotes current sharing among multiple devices. To ensure balanced operation, matched gate drive impedance, symmetrical PCB layout, and shared thermal mounting are recommended when deploying multiple IRF9640S units in parallel for higher current handling.

What is the significance of the "S" suffix in IRF9640S?

The "S" suffix in IRF9640S denotes the D2PAK (TO-263) surface-mount package variant, distinguishing it from through-hole versions like IRF9640L. This packaging choice provides superior thermal performance versus smaller SMD packages and enables higher power dissipation (125 W at T_C = 25 °C) compared to alternatives. The IRF9640S is supplied in tape-and-reel format (e.g., IRF9640STRRPbFa), making it compatible with automated SMT assembly lines.

How does the IRF9640S handle unclamped inductive switching?

The IRF9640S is repetitively avalanche rated with E_AR = 13 mJ and single-pulse avalanche energy E_AS = 700 mJ, allowing it to safely absorb energy from inductive loads without external snubbers. Test conditions specify V_DD = -50 V, I_AS = -11 A, and L = 8.7 mH. This capability makes the IRF9640S suitable for relay driving, solenoid control, and motor phase switching where inductive kickback is inherent - reducing system component count and improving reliability over non-avalanche-rated MOSFETs.

IRF9640S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9640S FAQ

1.How can I place an order for IRF9640S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9640S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9640S reliable?

The price and inventory of IRF9640S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9640S is usually 5 days.

3.What payment methods are accepted for IRF9640S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9640S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9640S?

IRF9640S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9640S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9640S?

For technical support, including IRF9640S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9640S requirements.

6.How does Aetrix verify that IRF9640S is sourced from the original manufacturer or authorized distributors?

All IRF9640S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9640S meets industry standards.

7.What is the process for return or replacement of IRF9640S?

All IRF9640S units undergo pre-shipment inspection (PSI). If there is an issue with IRF9640S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9640S part is unused and in its original packaging.

Return procedure for IRF9640S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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