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Infineon Technologies IRF9910PBF
- Part No.:
- IRF9910PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF9910PBF.pdf
- Description:
- MOSFET 2N-CH 20V 10A/12A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,525
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Product details
Overview
IRF9910PBF from Infineon Technologies is a dual-channel, N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, configured as a control FET (Q1) and synchronous rectifier FET (Q2) pair for high-efficiency DC-DC conversion. It delivers RDS(on) of 13.4 mΩ (Q1) and 9.3 mΩ (Q2) at VGS = 10 V, supports 10 A and 12 A continuous drain current respectively, and operates with ±20 V gate rating - optimized for point-of-load (POL) converters in graphics cards and server VRMs.
For engineers reviewing the IRF9910PBF datasheet, IRF9910PBF pinout, IRF9910PBF application, or IRF9910PBF equivalent, key selection criteria include dual-FET channel matching, low gate charge (7.4 nC / 15 nC), avalanche energy rating (33 mJ / 26 mJ), body diode reverse recovery performance (trr = 11–24 ns), and thermal resistance (RθJA = 62.5 °C/W).
Technical Context
This dual MOSFET integrates two discrete N-channel silicon HEXFETs in a single SO-8 package: Q1 serves as the high-side control switch with higher threshold voltage (VGS(th) = 1.65–2.55 V) and lower transconductance (gfs = 19 S), while Q2 functions as the low-side synchronous rectifier with lower RDS(on), higher gfs (27 S), and tighter VGS(th) tempco (−5.0 mV/°C). Both share common source connection in typical half-bridge layout.
Its clamped inductive switching performance is characterized across temperature (−55 to +150 °C), with fully specified avalanche capability (IAR = 8.3 A / 9.8 A), gate charge partitioning (Qgs2 + Qgd = 3.4 nC / 6.8 nC), and capacitance profiles (Ciss = 900 pF / 1860 pF) enabling precise gate driver sizing for <10 ns turn-on/turn-off timing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 20 V - defines maximum blocking voltage in POL buck stages with 12 V input rails |
| RDS(on) Q1 / Q2 | 13.4 mΩ / 9.3 mΩ @ VGS = 10 V - sets conduction loss in high-current, low-voltage output stages |
| ID Continuous | 10 A (Q1) / 12 A (Q2) @ TA = 25 °C - determines current-handling capacity without heatsink in compact VRMs |
| Qg Total Gate Charge | 7.4 nC (Q1) / 15 nC (Q2) - directly impacts required gate driver peak current and switching loss |
| trr Reverse Recovery | 11–17 ns (Q1) / 16–24 ns (Q2) - limits shoot-through risk and EMI during synchronous rectification |
| EAS Avalanche Energy | 33 mJ (Q1) / 26 mJ - enables robustness against inductive switching transients in unregulated loads |
| RθJA | 62.5 °C/W - defines junction-to-ambient thermal rise under natural convection, critical for board-level thermal design |
Pinout & Package
IRF9910PBF uses an industry-standard SO-8 surface-mount package with exposed drain pad for thermal enhancement. Pin numbering follows JEDEC MS-012AC standard (pin 1 = G1, pin 2 = S1, pin 3 = D1, pin 4 = G2, pin 5 = S2, pin 6 = D2, pins 7–8 = D1/D2 common drain tie).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G1) | Gate of Q1 (Control FET) | Drives high-side switch; requires isolated or level-shifted gate signal in half-bridge |
| Pin 2 (S1) | Source of Q1 | Connects to switch node; referenced to Q1's local ground in bootstrap configuration |
| Pin 3 (D1) | Drain of Q1 | Common drain terminal shared with Q2; connects to input rail (VIN) |
| Pin 4 (G2) | Gate of Q2 (Synchronous FET) | Driven by low-side gate driver; logic-level compatible with 4.5 V VGS |
| Pin 5 (S2) | Source of Q2 | Output node connection; forms return path for load current in buck topology |
| Pins 7–8 (D1/D2) | Common Drain Terminal | Thermally and electrically tied to internal die drains; soldered to PCB copper for heat dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V VGS | Enables direct drive from 5 V controllers without gate boosting, reducing BOM count in cost-sensitive POLs |
| Fully characterized avalanche voltage/current | Guarantees safe operation under unclamped inductive switching - eliminates need for external snubbers in VRM designs |
| Matched dual-channel thermal coefficients | ΔVGS(th)/ΔTJ of −4.9/−5.0 mV/°C ensures stable current sharing between Q1/Q2 across temperature |
| Lead-free and RoHS-compliant | Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), supporting lead-free reflow without popcorn failure |
| Low gate charge asymmetry | Qgd/Qg ratio of ~34% (Q1) and ~36% (Q2) enables predictable Miller plateau timing for precise dead-time control |
Applications
| Graphics Card VRM | Server CPU Voltage Regulator |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying GPU core voltage (0.8–1.2 V @ up to 300 A). IC Role / Device Role / Timing Role: Q1 acts as high-side control MOSFET; Q2 serves as low-side synchronous rectifier in each phase leg. Use Value: Dual-FET integration reduces PCB area by 30% vs discrete solutions while maintaining <15 ns total propagation delay for phase interleaving. |
Use Scenario: 8+1 phase VRM delivering 1.0 V @ 200 A to dual-socket Xeon processors with dynamic load steps >50 A/µs. IC Role / Device Role / Timing Role: Q1 handles fast transient response on high-side; Q2 minimizes conduction loss during high-duty-cycle operation. Use Value: Matched RDS(on) tempcos ensure balanced current distribution across phases over −40 to +85 °C ambient. |
| Game Console Power Delivery | Set-Top Box POL Module |
Use Scenario: Compact 3-phase VRM powering SoC and memory subsystems in space-constrained gaming hardware. IC Role / Device Role / Timing Role: Q1/Q2 pair implements one full buck stage per phase; SO-8 footprint enables dense layout. Use Value: Low Qg (7.4/15 nC) allows use of low-power gate drivers (e.g., IR35201), cutting driver supply current by 40%. |
Use Scenario: Single-phase 5 V to 1.2 V POL converter for video decoder ASIC in consumer STB with strict EMI limits. IC Role / Device Role / Timing Role: Q1 switches at 500 kHz; Q2 conducts during freewheeling interval with controlled dV/dt. Use Value: Crss = 140/310 pF suppresses radiated emissions by limiting Miller-induced dv/dt coupling into gate loop. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-N-channel synchronous buck FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 11.5 mΩ / 8.0 mΩ @ 10 V; higher Ciss (1100/2100 pF); no avalanche rating published | Lacks guaranteed avalanche ruggedness; suitable only where inductive transients are suppressed externally | Prefer when lowest conduction loss is primary goal and system-level protection is already implemented |
| DMN6016LFG-7 | Single-channel dual-die SO-8; Q1/Q2 share same RDS(on) spec (12.5 mΩ); lower ID (9.5 A); no trr characterization | Not validated for high-di/dt synchronous rectification; limited to medium-frequency (<300 kHz) POLs | Select for simplified layout where matched channels are less critical than cost reduction |
Compared with Si7852DP-T1-GE3 and DMN6016LFG-7, IRF9910PBF uniquely combines rated avalanche energy, tightly specified trr, and asymmetric gate charge partitioning - making it the only option qualified for high-di/dt, unclamped-inductive server VRMs requiring zero external protection.
Availability
IRF9910PBF is available at Aetrix Electronics and suitable for graphics card VRMs, server CPU voltage regulators, and game console power delivery systems requiring stable component supply across extended production lifecycles.
Supply support for IRF9910PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The IRF9910PBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure where thermal performance and switching reliability are critical.
FAQ
What is the maximum recommended gate drive voltage for IRF9910PBF?
The absolute maximum VGS rating is ±20 V per the datasheet. For reliable long-term operation, gate drive should be limited to 10 V to avoid accelerated gate oxide degradation. Driving above 12 V increases RDS(on) margin but risks reduced gate reliability under repeated hot-switching conditions, especially at elevated junction temperatures (>125 °C).
Can IRF9910PBF be used in a synchronous buck converter without a dedicated gate driver IC?
No - its total gate charge (7.4 nC / 15 nC) and Miller plateau requirements demand a dedicated gate driver capable of ≥2 A peak sink/source current. Microcontroller GPIOs lack sufficient current drive and cannot manage the critical dead-time control needed to prevent shoot-through between Q1 and Q2 in a half-bridge configuration.
How does the body diode forward voltage affect efficiency in continuous conduction mode?
VSD is specified ≤1.0 V at 8.3–9.8 A, contributing measurable conduction loss during the non-overlap interval before Q2 turns on. In CCM, this loss is typically 0.5–1.2 W per device depending on duty cycle and load - justifying synchronous rectification only when Q2's RDS(on) × IOUT² is significantly lower than VSD × IOUT.
Is IRF9910PBF suitable for automotive applications per AEC-Q101?
No - IRF9910PBF is not AEC-Q101 qualified. Its qualification is limited to commercial/industrial temperature range (−55 to +150 °C), and it lacks the stress testing, failure analysis reporting, and lot traceability required for automotive use. For automotive POLs, Infineon's AEC-Q101-qualified BSC010N04LS series is the designated alternative.
IRF9910PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 10A, 12A
- Rds On (Max) @ Id, Vgs:
- 13.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 900pF @ 10V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF9910PBF FAQ
1.How can I place an order for IRF9910PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9910PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9910PBF reliable?
The price and inventory of IRF9910PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9910PBF is usually 5 days.
3.What payment methods are accepted for IRF9910PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9910PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9910PBF?
IRF9910PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9910PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9910PBF?
For technical support, including IRF9910PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9910PBF requirements.
6.How does Aetrix verify that IRF9910PBF is sourced from the original manufacturer or authorized distributors?
All IRF9910PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9910PBF meets industry standards.
7.What is the process for return or replacement of IRF9910PBF?
All IRF9910PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9910PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9910PBF part is unused and in its original packaging.
Return procedure for IRF9910PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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