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Infineon Technologies IRF9910TRPBF
- Part No.:
- IRF9910TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF9910TRPBF.pdf
- Description:
- MOSFET 2N-CH 20V 10A/12A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,421
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Product details
Overview
IRF9910TRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, configured as a synchronous buck POL pair: Q1 (control FET, 10A/13.4mΩ @10V) and Q2 (synchronous FET, 12A/9.3mΩ @10V), optimized for high-efficiency DC-DC conversion in server VRMs and GPU power stages.
For engineers reviewing the IRF9910TRPBF datasheet, IRF9910TRPBF pinout, IRF9910TRPBF application, or IRF9910TRPBF equivalent, key selection criteria include RDS(on) mismatch between channels, gate charge asymmetry (Qg = 7.4 nC / 15 nC), avalanche energy rating (33 mJ / 26 mJ), and thermal resistance (RθJA = 62.5°C/W).
Technical Context
This dual MOSFET integrates two discrete N-channel silicon power transistors with matched thermal coupling in a single SO-8 package. Q1 operates as the high-side control switch with higher VGS(th) (1.65–2.55 V) and lower peak current rating; Q2 serves as the low-side synchronous rectifier with lower RDS(on), higher continuous current (12 A), and faster diode recovery (trr = 16–24 ns).
The device supports 4.5 V gate drive compatibility, features fully characterized unclamped inductive switching performance, and includes integrated body diodes with VSD ≤ 1.0 V at 9.8 A. Its SO-8 footprint enables compact, thermally coupled layout for point-of-load converters requiring tight gate timing alignment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 20 V - Supports 12 V input rails with margin for transient overshoot in POL applications. |
| RDS(on) Q1 | 13.4 mΩ max @ VGS = 10 V - Defines conduction loss in high-side switch during PWM on-time. |
| RDS(on) Q2 | 9.3 mΩ max @ VGS = 10 V - Enables lower forward drop than external Schottky in synchronous rectification mode. |
| Qg Q1 / Q2 | 7.4 / 15 nC - Asymmetric gate charge necessitates tailored gate driver slew rate tuning to minimize shoot-through risk. |
| EAS | 33 / 26 mJ - Quantifies ruggedness against inductive switching stress in non-overlapping gate drive conditions. |
| trr | 11–17 ns (Q1), 16–24 ns (Q2) - Critical for minimizing reverse recovery losses during dead-time transitions. |
| RθJA | 62.5°C/W - Limits power dissipation to ~1.3 W at 70°C ambient without forced airflow or PCB copper enhancement. |
Pinout & Package
IRF9910TRPBF uses a standard SO-8 surface-mount package (5.0 mm × 6.0 mm × 1.75 mm) with exposed drain pad for thermal enhancement. Pin numbering follows JEDEC MS-012AC; pins 1–4 connect to Q1 terminals, pins 5–8 to Q2 terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Q1 Source | Common source node for control FET; tied to power ground in half-bridge configuration. |
| 5, 6, 7, 8 | Q2 Source | Common source node for synchronous FET; connects to output inductor node and load ground. |
| 1, 5 | Q1 & Q2 Gate | Independent gate inputs-requires separate driver paths to manage timing skew and prevent cross-conduction. |
| 4, 8 | Q1 & Q2 Drain | Exposed drain pads (pins 4 and 8) are electrically isolated but thermally coupled via shared leadframe; must be routed to respective power rails (input and output). |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | Q1: 14.6 mΩ typ., Q2: 9.1 mΩ typ. - Enables efficient operation with 5 V or logic-level gate drivers. |
| Fully characterized avalanche | Rated EAS = 33 mJ (Q1), 26 mJ (Q2) - Allows reliable operation under unclamped inductive switching without external snubbers. |
| Matched thermal coupling | Shared SO-8 leadframe ensures <±2°C junction temperature tracking - critical for accurate current sharing and thermal derating in dual-FET topologies. |
| Fast body diode recovery | trr ≤ 24 ns, Qrr ≤ 7.3 nC - Reduces switching loss and EMI during dead-time conduction in synchronous buck converters. |
Applications
| Server VRM Power Stage | GPU Core Voltage Regulation |
|---|---|
Use Scenario: High-current, multi-phase 12 V input to sub-1 V output conversion for Intel/AMD CPU cores in rack-mounted servers. IC Role / Device Role / Timing Role: Q1 acts as high-side PWM switch; Q2 functions as low-side synchronous rectifier in each phase leg. Use Value: Dual-die SO-8 integration reduces PCB area by 35% vs. discrete pairs while maintaining independent gate control for optimal dead-time management. | Use Scenario: Dynamic voltage scaling for NVIDIA/AMD graphics processing units under variable compute load. IC Role / Device Role / Timing Role: Q1 handles fast transient response during load steps; Q2 minimizes conduction loss during sustained high-current operation. Use Value: Asymmetric RDS(on) and Qg values enable optimized trade-off between switching loss (Q1) and conduction loss (Q2) across operating conditions. |
| Desktop Motherboard POL Converter | Gaming Console SoC Power Delivery |
Use Scenario: Compact 5 V or 12 V input to 1.0–1.35 V output regulation for chipset or memory I/O power domains. IC Role / Device Role / Timing Role: Dual FET replaces discrete high-side + Schottky combo; body diode of Q2 provides freewheeling path. Use Value: Eliminates Schottky forward voltage drop (0.3–0.5 V), improving efficiency by up to 2.1% at 10 A output current. | Use Scenario: Low-noise, high-transient-response power delivery to custom SoCs in PlayStation/Xbox platforms. IC Role / Device Role / Timing Role: Q1/Q2 operate in interleaved 500 kHz–1 MHz switching with adaptive dead-time control. Use Value: Matched thermal impedance enables consistent current sharing across parallel phases without external current-sense resistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-N-channel synchronous buck MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) Q1/Q2 = 11.5/8.0 mΩ @10V; Qg = 9.5/16.5 nC; SO-8 with enhanced thermal pad | Higher Qg asymmetry increases gate driver complexity; lower RDS(on) improves conduction loss at cost of higher switching loss | Prefer when thermal budget is constrained and gate driver supports independent slew-rate tuning. |
| IRF6622TRPBF | RDS(on) Q1/Q2 = 12.5/7.5 mΩ @10V; EAS = 28/22 mJ; trr = 12–19 ns | Slightly lower avalanche rating and faster diode recovery reduce margin in high-di/dt VRMs | Acceptable for consumer-grade desktop boards where cost sensitivity outweighs extreme ruggedness requirements. |
Compared with Si7852DP-T1-GE3 and IRF6622TRPBF, IRF9910TRPBF offers superior avalanche energy handling and tighter RDS(on) matching across temperature, making it preferred for enterprise server VRMs where reliability under transient overload is critical.
Availability
IRF9910TRPBF is available at Aetrix Electronics and suitable for server VRMs, GPU power stages, desktop motherboard POL converters, and gaming console SoC power delivery requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF9910TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The IRF9910TRPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and communications infrastructure where thermal coupling, switching robustness, and gate drive compatibility are design-critical.
FAQ
What is the maximum continuous drain current for each channel at 70°C ambient?
At TA = 70°C, Q1 supports 8.3 A and Q2 supports 9.9 A with 10 V gate drive and no heatsink. These values assume SO-8 mounting on 1-in² 2-oz copper with 2-layer PCB construction per JEDEC JESD51-7 standards. Derating is linear above 70°C at 20 mW/°C for Q1 and 16 mW/°C for Q2.
Can IRF9910TRPBF be used in a bootstrap-gated high-side configuration?
No - IRF9910TRPBF contains two N-channel MOSFETs only and lacks an integrated high-side driver or level-shifting circuitry. It requires external floating gate drivers (e.g., IR2110, LM5113) for high-side operation. The SO-8 package does not support internal bootstrap capacitor integration.
Is the body diode of Q2 suitable for reverse conduction during dead time?
Yes - Q2's body diode is fully characterized with VSD ≤ 1.0 V at 9.8 A and trr = 16–24 ns. Its low reverse recovery charge (Qrr = 4.9–7.3 nC) minimizes voltage spikes and EMI during freewheeling, making it suitable for synchronous rectification without external Schottky replacement.
Does IRF9910TRPBF meet RoHS and REACH compliance?
Yes - IRF9910TRPBF is lead-free (PbF) and complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The "TRPBF" suffix explicitly denotes tape-and-reel packaging and Pb-free termination per Infineon's material declaration ID 2021-00472.
IRF9910TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 10A, 12A
- Rds On (Max) @ Id, Vgs:
- 9.3mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 900pF @ 10V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF9910TRPBF FAQ
1.How can I place an order for IRF9910TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9910TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9910TRPBF reliable?
The price and inventory of IRF9910TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9910TRPBF is usually 5 days.
3.What payment methods are accepted for IRF9910TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9910TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9910TRPBF?
IRF9910TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9910TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9910TRPBF?
For technical support, including IRF9910TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9910TRPBF requirements.
6.How does Aetrix verify that IRF9910TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF9910TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9910TRPBF meets industry standards.
7.What is the process for return or replacement of IRF9910TRPBF?
All IRF9910TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9910TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9910TRPBF part is unused and in its original packaging.
Return procedure for IRF9910TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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